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公开(公告)号：US20220005980A1
公开(公告)日：2022-01-06
申请号：US17281700
申请日：2019-10-31
Applicant: The Regents of the University of California
Inventor： Tal Margalith , Matthew S. Wong , Lesley Chan , Steven P. DenBaars
IPC: H01L33/44 , H01L33/32 , H01L33/00 , H01L33/02 , H01L21/306
Abstract: Micro-scale light emitting diodes (micro-LEDs) with ultra-low leakage current results from a sidewall passivation method for the micro-LEDs using a chemical treatment followed by conformal dielectric deposition, which reduces or eliminates sidewall damage and surface recombination, and the passivated micro-LEDs can achieve higher efficiency than micro-LEDs without sidewall treatments. Moreover, the sidewall profile of micro-LEDs can be altered by varying the conditions of chemical treatment.
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公开(公告)号：US11217722B2
公开(公告)日：2022-01-04
申请号：US15743023
申请日：2016-07-11
Applicant: The Regents of the University of California
Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L21/02 , H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06 , H01S5/026 , H01S5/183 , H01S5/343
Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US20210104504A1
公开(公告)日：2021-04-08
申请号：US16325709
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Erin C. Young , Charles Forman , John T. Leonard , SeungGeun Lee , Dan Cohen , Robert M. Farrell , Michael Iza , Burhan Saifaddin , Abdullah Almogbel , Humberto Foronda , James S. Speck , Steven P. DenBaars , Shuji Nakamura
Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
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公开(公告)号：US10454010B1
公开(公告)日：2019-10-22
申请号：US16422323
申请日：2019-05-24
Applicant: The Regents of the University of California
Inventor： Shuji Nakamura , Steven P. DenBaars , Hirokuni Asamizu
Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
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公开(公告)号：US20190207043A1
公开(公告)日：2019-07-04
申请号：US16325246
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L31/0304 , H01L33/00 , H01L21/02 , H01L33/32
CPC classification number: H01L31/03044 , H01L21/0254 , H01L21/02579 , H01L33/007 , H01L33/32 , Y02E10/544
Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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Patent Agency Ranking
公开(公告)号：US10297721B2
公开(公告)日：2019-05-21
申请号：US15908547
申请日：2018-02-28
Applicant: The Regents of the University of California
Inventor： Asad J. Mughal , Sang Ho Oh , Steven P. DenBaars
IPC: H01L33/42 , H01L33/32 , H01L31/0224
Abstract: A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.
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公开(公告)号：US20190074404A1
公开(公告)日：2019-03-07
申请号：US15743023
申请日：2016-07-11
Applicant: The Regents of the University of California
Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L33/00 , H01L33/06 , H01L33/32 , H01L31/147
Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US20180190875A1
公开(公告)日：2018-07-05
申请号：US15908547
申请日：2018-02-28
Applicant: The Regents of the University of California
Inventor： Asad J. Mughal , Sang Ho Oh , Steven P. DenBaars
IPC: H01L33/42 , H01L33/32 , H01L31/0224
CPC classification number: H01L33/42 , H01L31/022483 , H01L33/32 , H01L2933/0016
Abstract: A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.
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公开(公告)号：US09917422B2
公开(公告)日：2018-03-13
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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90.发明授权公开(公告)号：US09640947B2
公开(公告)日：2017-05-02
申请号：US14820258
申请日：2015-08-06
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Casey O. Holder , Daniel F. Feezell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC: H01S5/183 , H01S5/10 , H01S5/343 , B82Y20/00 , H01S5/065 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/42
CPC classification number: H01S5/18355 , B82Y20/00 , H01S5/005 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/0654 , H01S5/1039 , H01S5/183 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2009 , H01S5/209 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/176
Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
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