公开(公告)号：US20180076009A1

公开(公告)日：2018-03-15

申请号：US15813895

申请日：2017-11-15

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/32 ,  H01Q21/00 ,  H01P3/127 ,  H01P3/12 ,  C23C16/513 ,  H01J37/05 ,  C23C16/511 ,  H01J37/08

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

公开(公告)号：US20180068850A1

公开(公告)日：2018-03-08

申请号：US15258624

申请日：2016-09-07

Applicant: Euclid TechLabs, LLC

Inventor： James E Butler

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01L21/02527 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32724 ,  H01J2237/3321 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02376 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02656 ,  H01L22/12 ,  H01L22/26

Abstract: An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm−2 sheet carrier concentration.

公开(公告)号：US20170372877A1

公开(公告)日：2017-12-28

申请号：US15630365

申请日：2017-06-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takafumi NOGAMI ,  Makoto IGARASHI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32935 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/332 ,  H01L21/67253 ,  H01L21/68714

Abstract: A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index value between adjustment positions for each of the adjustment parts, the index value corresponding to electron density of plasma, an input part for inputting a measurement result of the index value obtained when plasma is generated and the adjustment positions of the adjustment parts, and a data processing part configured to estimate the index value for each of adjustment positions of the adjustment parts based on input items input to the input part and the estimation data and configured to select proper combinations of the adjustment positions of the adjustment parts based on combinations of the adjustment positions of the adjustment parts and estimated values of a plurality of index values in the circumferential direction corresponding to the respective combinations.

公开(公告)号：US09847212B2

公开(公告)日：2017-12-19

申请号：US14341450

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01Q21/00 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01P3/12 ,  H01P3/127

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

公开(公告)号：US20170137944A1

公开(公告)日：2017-05-18

申请号：US15322635

申请日：2015-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Yusuke ICHIKAWA

IPC: C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/511 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/332 ,  H01L21/3065 ,  H01L21/67069

Abstract: This plasma processing apparatus is provided with a processing container, a placing table, a gas supply mechanism, a plasma generating mechanism, and an adjustment unit. The placing table is provided in the processing container, and a subject to be processed is placed on the placing table. The gas supply mechanism supplies a processing gas to the inside of the processing container, said processing gas being to be used for the purpose of plasma reaction. The plasma generating mechanism includes a microwave oscillator, and brings the processing gas supplied to the inside of the processing container into the plasma state using microwaves oscillated by means of the microwave oscillator. In the cases of performing a plurality of steps for plasma-processing the subject, the adjustment unit adjusts, at timing of switching the steps, the frequencies of the microwaves to be oscillated by means of the microwave oscillator to target frequencies predetermined for respective steps.

公开(公告)号：US09653266B2

公开(公告)日：2017-05-16

申请号：US14645837

申请日：2015-03-12

Applicant: MKS Instruments, Inc.

Inventor： Xing Chen ,  Chengxiang Ji ,  Erin Madden ,  Ilya Pokidov ,  Kevin W. Wenzel

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32522 ,  H05H1/46 ,  H05H2001/4622

Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

公开(公告)号：US20170103874A1

公开(公告)日：2017-04-13

申请号：US15285587

申请日：2016-10-05

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Koji Koyama

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J2237/327

Abstract: Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

公开(公告)号：US09520271B2

公开(公告)日：2016-12-13

申请号：US14341362

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/00 ,  H01J37/32 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01P3/12 ,  H01P3/127

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge.

Abstract translation: 用于分离具有不同质量或电荷的离子的装置包括耦合到微波源的波导导管，用于通过波导管道中的开口传输微波。 管道的出口端位于用于将材料从材料源运输到开口的开口处。 等离子体室通过开口与波导管连通。 等离子体腔室通过开口接收来自波导管的微波和来自管道的材料。 等离子体室包括设置在其外壁中的磁体，用于在等离子体室中形成磁场。 等离子体室包括在室的与包含开口的一侧相对的一侧的带电盖。 盖子包括提取来自等离子体室的离子束的抽吸孔。 与一个提取孔耦合的偏转器接收从等离子体室提取的离子束。 每个偏转器弯曲离子束，并提供单独的通道，用于根据其相应的质量或电荷离开离子束弯曲的不同轨迹之后捕获离子。

公开(公告)号：US20150270105A1

公开(公告)日：2015-09-24

申请号：US14221132

申请日：2014-03-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

公开(公告)号：US20150099368A1

公开(公告)日：2015-04-09

申请号：US14447681

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Ze SHEN ,  Tetsuo ONO ,  Hisao YASUNAMI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF3 gas.

Abstract translation: 在由Si层和SiGe层组成的层叠膜中，相对于Si层中的每一个Si层选择性地各向同性蚀刻每个SiGe层的干蚀刻方法中，每个SiGe层被等离子体蚀刻 使用NF3气体的等离子体。