公开(公告)号：US20070269932A1

公开(公告)日：2007-11-22

申请号：US11832219

申请日：2007-08-01

申请人： Donald Abbott ,  Edgar Zuniga-Ortiz

发明人： Donald Abbott ,  Edgar Zuniga-Ortiz

IPC分类号： H01L21/60

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/48839 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/3426 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device having a leadframe comprised of a base metal (110, e.g., copper), a chip mount pad (103) and a plurality of lead segments (104). Each of the segments has a first end (104a) near the mount pad and a second end (104b) remote from the mount pad. The device further has a semiconductor chip (103) attached to the mount pad and electrical interconnections (107) between the chip and the first segment ends. Encapsulation material (120) covers the chip, the bonding wires and the first segment ends, yet leaves the second segment ends exposed. At least portions of the second segment ends have the base metal covered by a layer of solderable metal (130, e.g., nickel) and by an outermost layer of noble metal (140, e.g., stack of palladium and gold).

摘要翻译： 一种半导体器件，其具有由基底金属（110，例如铜），芯片安装焊盘（103）和多个引线段（104）组成的引线框架。 每个段具有靠近安装垫的第一端（104a）和远离安装垫的第二端（104b）。 该装置还具有附接到安装焊盘的半导体芯片（103）和芯片与第一段末端之间的电互连（107）。 封装材料（120）覆盖芯片，接合线和第一段末端，但使第二段末端露出。 第二段末端的至少部分具有由可焊接金属层（130，例如镍）和最外层的贵金属（140，例如钯和金的叠层）覆盖的基底金属。

公开(公告)号：US20070176267A1

公开(公告)日：2007-08-02

申请号：US11345754

申请日：2006-02-02

申请人： Donald Abbott

发明人： Donald Abbott

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/49582 ,  H01L21/561 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A post-mold plated semiconductor device has an aluminum leadframe (105) with a structure including a chip mount pad and a plurality of lead segments without cantilevered lead portions. A semiconductor chip (210) is attached to the chip mount pad, and conductive connections (212) span from the chip to the aluminum of the lead segments. Polymeric encapsulation material (220), such as a molding compound, covers the chip, the connections, and portions of the aluminum lead segments without leaving cantilevered segment portions. Preferably by electroless plating, a zinc layer (301) and a nickel layer (302) are on those portions of the lead segments, which are not covered by the encapsulation material including the aluminum segment surfaces (at 203b) formed by the device singulation step, and a layer (303) of noble metal, preferably palladium, is on the nickel layer.

摘要翻译： 后模制电镀半导体器件具有铝引线框架（105），其具有包括芯片安装焊盘和多个未悬置引线部分的引线段的结构。 半导体芯片（210）附接到芯片安装焊盘，并且导电连接（212）跨越引线段的芯片到铝。 诸如模塑料的聚合物封装材料（220）覆盖芯片，连接部分和铝引线段的部分，而不留下悬臂段。 优选地，通过无电解电镀，锌层（301）和镍层（302）位于引线段的那些部分上，其未被包括材料覆盖，包括由器件分离形成的铝段表面（在203b） 并且在镍层上存在贵金属（优选钯）的层（303）。

公开(公告)号：US20070111516A1

公开(公告)日：2007-05-17

申请号：US11620134

申请日：2007-01-05

申请人： Donald Abbott

发明人： Donald Abbott

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L23/498 ,  H01L21/4846 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K1/113 ,  H05K3/108 ,  H05K3/244 ,  H05K3/3463 ,  H05K2201/10674 ,  H05K2203/0723 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： An apparatus comprising an insulating substrate having first and second surfaces and a plurality of metal-filled vias extending from the first to the second surface. The first and second surfaces have contact pads, each one comprising a connector stack to at least one of the vias. The stack comprises a seed metal layer in contact with the via metal capable of providing an adhesive and conductive layer for electroplating on its surface, a first electroplated support layer secured to the seed metal layer, a second electroplated support layer, and at least one reflow metal bonding layer on the second support layer. The electrolytic plating process produces support layers substantially pure (at least 99.0%), free of unwanted additives such as phosphorus or boron, and exhibiting closely controlled grain sizes. Reflow metal connectors provide attachment to chip contact pads and external parts.

摘要翻译： 一种包括具有第一表面和第二表面的绝缘基底和从第一表面延伸到第二表面的多个金属填充的通孔的装置。 第一和第二表面具有接触垫，每个接触垫包括至少一个通孔的连接器叠层。 堆叠包括与通孔金属接触的种子金属层，其能够提供用于在其表面上电镀的粘合剂和导电层，固定到种子金属层的第一电镀支撑层，第二电镀支撑层和至少一个回流焊 第二支撑层上的金属结合层。 电解电镀工艺产生基本上纯的（至少99.0％）的支撑层，没有不需要的添加剂如磷或硼，并且表现出紧密控制的晶粒尺寸。 回流金属连接器提供与芯片接触焊盘和外部部件的连接。

公开(公告)号：US20060097363A1

公开(公告)日：2006-05-11

申请号：US10985758

申请日：2004-11-09

申请人： Donald Abbott ,  Edgar Zuniga-Ortiz

发明人： Donald Abbott ,  Edgar Zuniga-Ortiz

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48739 ,  H01L2224/48839 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/3426 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device having a leadframe comprised of a base metal (110, e.g., copper), a chip mount pad (103) and a plurality of lead segments (104). Each of the segments has a first end (104a) near the mount pad and a second end (104b) remote from the mount pad. The device further has a semiconductor chip (103) attached to the mount pad and electrical interconnections (107) between the chip and the first segment ends. Encapsulation material (120) covers the chip, the bonding wires and the first segment ends, yet leaves the second segment ends exposed. At least portions of the second segment ends have the base metal covered by a layer of solderable metal (130, e.g., nickel) and by an outermost layer of noble metal (140, e.g., stack of palladium and gold).

摘要翻译： 一种半导体器件，其具有由基底金属（110，例如铜），芯片安装焊盘（103）和多个引线段（104）组成的引线框架。 每个段具有靠近安装垫的第一端（104a）和远离安装垫的第二端（104b）。 该装置还具有附接到安装焊盘的半导体芯片（103）和芯片与第一段末端之间的电互连（107）。 封装材料（120）覆盖芯片，接合线和第一段末端，但使第二段末端露出。 第二段末端的至少部分具有由可焊接金属层（130，例如镍）和最外层的贵金属（140，例如钯和金的叠层）覆盖的基底金属。

公开(公告)号：US20080098594A1

公开(公告)日：2008-05-01

申请号：US11936161

申请日：2007-11-07

申请人： Donald Abbott

发明人： Donald Abbott

IPC分类号： H01R43/00

CPC分类号： H01L23/49582 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49121 ,  Y10T29/49124 ,  Y10T29/49224 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device has a leadframe with a structure made of a base metal (105), wherein the structure consists of a chip mount pad (402) and a plurality of lead segments (403). Covering the base metal are, consecutively, a nickel layer (301) on the base metal, and a continuous layer of noble metal, which consists of a gold layer (201) on the nickel layer, and an outermost palladium layer (202) on the gold layer. A semiconductor chip (410) is attached to the chip mount pad and conductive connections (412) span from the chip to the lead segments. Polymeric encapsulation compound (420) covers the chip, the connections, and portions of the lead segments. In QFN devices with straight sides (501), the compound forms a surface (421) coplanar with the outermost palladium layer (202) on the un-encapsulated leadframe surfaces.

摘要翻译： 半导体器件具有由基底金属（105）制成的结构的引线框架，其中该结构由芯片安装焊盘（402）和多个引线段（403）组成。 在基体金属上连续地覆盖基底金属，并且在镍层上由金层（201）和最外层的钯层（202）组成的连续的贵金属层 金层。 半导体芯片（410）附接到芯片安装焊盘，并且导电连接（412）跨越芯片到引线段。 聚合物封装化合物（420）覆盖芯片，连接和引线段的部分。 在具有直边（501）的QFN器件中，化合物形成与未封装的引线框架表面上的最外层钯（202）共面的表面（421）。

公开(公告)号：US20080012101A1

公开(公告)日：2008-01-17

申请号：US11864233

申请日：2007-09-28

申请人： Edgar Zuniga-Ortiz ,  Sreenivasan Koduri ,  Donald Abbott

发明人： Edgar Zuniga-Ortiz ,  Sreenivasan Koduri ,  Donald Abbott

IPC分类号： H01L23/495

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/206

摘要： A leadframe with a base metal structure (for example, copper) and first and second surfaces. A first metal layer, which is adhesive to polymeric materials such as molding compounds, is adherent to the first leadframe surface. The second leadframe surface is covered by a second metal layer for affinity to reflow metals such as tin alloy; this second metal layer has a different composition from the first metal layer. One example of the first surface is a nickel layer (201) in contact with the base metal (105), a palladium layer (202) in contact with the nickel layer, and an outermost tin layer (203) in contact with the palladium. Another example is an oxidized surface of the base metal. The second metal layer, on the second leadframe surface, comprises a nickel layer (201) in contact with the base metal (105), a palladium layer (202) in contact with the nickel layer, and an outermost gold layer (204) in contact with the palladium layer.

摘要翻译： 具有贱金属结构（例如铜）和第一和第二表面的引线框架。 与聚合物材料如模塑料粘接的第一金属层与第一引线框表面贴附。 第二引线框表面被第二金属层覆盖，用于对诸如锡合金的回流金属进行亲和性; 该第二金属层与第一金属层具有不同的组成。 第一表面的一个实例是与贱金属（105）接触的镍层（201），与镍层接触的钯层（202）和与钯接触的最外层锡层（203）。 另一个例子是贱金属的氧化表面。 在第二引线框表面上的第二金属层包括与基底金属（105）接触的镍层（201），与镍层接触的钯层（202）和与镍层接触的最外层金属层 与钯层接触。

公开(公告)号：US20070243665A1

公开(公告)日：2007-10-18

申请号：US11763565

申请日：2007-06-15

申请人： Donald Abbott ,  Michael Mitchell ,  Paul Moehle ,  Douglas Romm

发明人： Donald Abbott ,  Michael Mitchell ,  Paul Moehle ,  Douglas Romm

IPC分类号： H01L21/00 ,  H01L21/4763

CPC分类号： C23C30/00 ,  C25D5/14 ,  C25D5/34 ,  H01L21/4821 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48764 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H05K3/3426 ,  H05K2201/10689 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A leadframe for use in the assembly of integrated circuit chips comprising a base metal structure having an adherent layer of nickel covering said base metal; an adherent film of palladium on said nickel layer; and an adherent layer of palladium on said palladium film, selectively covering areas of said leadframe suitable for bonding wire attachment and solder attachment.

摘要翻译： 一种用于组装集成电路芯片的引线框，其包括具有覆盖所述母材的镍的粘附层的基底金属结构; 在所述镍层上的钯的粘附膜; 和在所述钯膜上的钯的粘附层，选择性地覆盖所述引线框的适合于接合引线附着和焊料附着的区域。

公开(公告)号：US20070164405A1

公开(公告)日：2007-07-19

申请号：US11679007

申请日：2007-02-26

申请人： Donald Abbott

发明人： Donald Abbott

IPC分类号： H01L23/495

CPC分类号： H01L23/49582 ,  H01L21/4842 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/48247 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method (300) for fabricating a lead frame (100), comprising forming a plurality of external leads (122) in a lead frame material (108), plating a metal (222) on all surfaces of the lead frame material (108), and subsequently forming a plurality of internal leads (124) in the lead frame material (108). The lead frame material (108) may comprise of a portion of a contiguous metal sheeting (204) rolled upon a first coil (202), wherein the contiguous metal sheeting (204) is fed into an external lead stamping apparatus (206), thus forming the external leads (122), and rolled onto a second coil (215). The portion is fed into a plating apparatus and plated with the metal (222), and rolled onto a third coil (218) prior to forming the plurality of internal leads (124). The third coil (218) can be unrolled into an internal lead stamping apparatus (226), thus forming the internal leads (124) of a lead frame (100). The lead frame (100) is cleaned and subsequently rolled onto a fourth coil (238) to be cut into sheets (240).

摘要翻译： 一种用于制造引线框架（100）的方法（300），包括在引线框架材料（108）中形成多个外部引线（122），在引线框架材料（108）的所有表面上镀覆金属（222） 并且随后在引线框架材料（108）中形成多个内部引线（124）。 引线框架材料（108）可以包括在第一线圈（202）上滚动的连续金属片（204）的一部分，其中相邻的金属片（204）被馈送到外部引线冲压装置（206）中，因此 形成外部引线（122），并滚动到第二线圈（215）上。 将该部分送入电镀装置中并镀上金属（222），并在形成多个内部引线（124）之前滚压到第三线圈（218）上。 第三线圈（218）可以展开到内部引线冲压装置（226）中，从而形成引线框架（100）的内部引线（124）。 引线框架（100）被清洁并随后滚动到第四线圈（238）上以被切割成片材（240）。

公开(公告)号：US20070090524A1

公开(公告)日：2007-04-26

申请号：US11259015

申请日：2005-10-26

申请人： Donald Abbott

发明人： Donald Abbott

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/49

CPC分类号： H01L21/6835 ,  H01L21/4828 ,  H01L21/568 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/105 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48511 ,  H01L2224/48599 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/85439 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device comprising a semiconductor chip (101) assembled on a first copper cuboid (110); the cuboid has sides of a height (111). The device further has a plurality of second copper cuboids (120) suitable for wire bond attachment; the second cuboids have sides of a height (121) substantially equal to the height of the first cuboid. The back surfaces of all cuboids are aligned in a plane (130). Encapsulation compound (140) is adhering to and embedding the chip, the wire bonds, and the sides of all cuboids so that the compound forms a first surface (140b) aligned with the plane of the back cuboid surfaces and a second surface (140a) above the embedded wires. For devices intended for stacking, the devices further comprise a plurality of vias (160) through the encapsulation compound from the first to the second compound surfaces; the vias are filled with copper, and the via locations are matching between the devices-to-be-stacked.

摘要翻译： 一种半导体器件，包括组装在第一铜长方体（110）上的半导体芯片（101） 长方体具有高度的一侧（111）。 该装置还具有多个适于引线键合的第二铜长方体（120）; 第二长方体具有基本上等于第一长方体的高度的高度（121）的侧面。 所有长方体的背面在平面（130）中对准。 包封化合物（140）粘附并包埋芯片，引线接合和所有长方体的侧面，使得化合物形成与后立方体表面的平面对准的第一表面（140b）和第二表面（140 a）上面的嵌入式电线。 对于用于堆叠的装置，装置还包括通过从第一复合表面到第二复合表面的封装化合物的多个通孔（160）; 通孔填充有铜，并且通孔位置在待堆叠的器件之间是匹配的。

公开(公告)号：US20070031697A1

公开(公告)日：2007-02-08

申请号：US11197002

申请日：2005-08-04

申请人： Haward Test ,  Donald Abbott

发明人： Haward Test ,  Donald Abbott

IPC分类号： B32B15/20

CPC分类号： B32B15/20 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T428/12458 ,  Y10T428/12528 ,  Y10T428/12875 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12944 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744

摘要： A metal structure (100) for a contact pad of a semiconductor device, which has interconnecting traces of a first copper layer (102). The substrate is protected by an insulating overcoat (104). In the structure, the first copper layer of first thickness and first crystallite size is selectively exposed by a window (110) in the insulating overcoat. A layer of second copper (105) of second thickness covers conformally the exposed first copper layer. The second layer is deposited by an electroless process and consists of a transition zone, adjoining the first layer and having copper crystallites of a second size, and a main zone having crystallites of the first size. The second thickness is selected so that the distance a void from the second layer can migrate during the life expectancy of the structure is smaller than the combined thicknesses of the first and second layers. A layer of nickel (106) is on the second copper layer, and a layer of noble metal (107) is on the nickel layer.

摘要翻译： 一种用于半导体器件的接触焊盘的金属结构（100），其具有第一铜层（102）的互连迹线。 衬底被绝缘外涂层（104）保护。 在该结构中，第一厚度和第一微晶尺寸的第一铜层通过绝缘外涂层中的窗口（110）选择性地暴露。 第二厚度的第二铜（105）层共形地覆盖暴露的第一铜层。 第二层通过无电解方法沉积，并由邻接第一层并具有第二尺寸的铜微晶的过渡区和具有第一尺寸的微晶的主区组成。 选择第二厚度使得在结构的预期寿命期间，与第二层的空隙可以迁移的距离小于第一层和第二层的组合厚度。 镍层（106）位于第二铜层上，贵金属层（107）位于镍层上。