公开(公告)号：US08933561B2

公开(公告)日：2015-01-13

申请号：US13211574

申请日：2011-08-17

申请人： SeYoung Jeong ,  Hogeon Song ,  Chungsun Lee ,  Ho-Jin Lee

发明人： SeYoung Jeong ,  Hogeon Song ,  Chungsun Lee ,  Ho-Jin Lee

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/481 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3128 ,  H01L24/04 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1304 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.

摘要翻译： 提供一种半导体器件。 半导体器件可以包括第一半导体芯片，其包括具有第一突起高度的第一至第二硅通孔以及具有大于第一突出高度的第二突出高度的第二穿透硅通孔，该第二突出高度穿过第一半导体芯片的至少一部分 ，第二半导体芯片可以电连接到第一通孔硅通孔，并且第三半导体芯片可以电连接到第二通孔硅通孔。

公开(公告)号：US08766455B2

公开(公告)日：2014-07-01

申请号：US13239885

申请日：2011-09-22

申请人： SeYoung Jeong ,  Sunpil Youn ,  Hogeon Song

发明人： SeYoung Jeong ,  Sunpil Youn ,  Hogeon Song

IPC分类号： B23B15/00 ,  H01L23/488

CPC分类号： H01L23/481 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/108 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/12708 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein a number of the second connection structures is less than a number of the first connection structures.

摘要翻译： 半导体器件包括第一半导体芯片，设置在第一半导体芯片的第一侧上的第一连接结构，设置在第一半导体芯片的第二侧上的第二半导体芯片，以及设置在第一和第二半导体芯片之间的第二连接结构 半导体芯片，其中多个第二连接结构小于多个第一连接结构。

公开(公告)号：US20120214302A1

公开(公告)日：2012-08-23

申请号：US13345441

申请日：2012-01-06

申请人： SEYOUNG JEONG ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

发明人： SEYOUNG JEONG ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05109 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.

摘要翻译： 提供一种制造半导体器件的方法。 该方法可以包括制备具有第一表面和第二表面的衬底，形成从衬底的第一表面暴露至少一部分衬底的通孔，在通孔的内壁上形成第一绝缘膜， 形成填充包括第一绝缘膜的通孔内部的导电连接部分，抛光基板的第二表面直到导电连接部分露出，并且使用电触摸选择性地在基板的第二表面上形成第二绝缘膜 暴露导电连接部分的方法。

公开(公告)号：US20120112359A1

公开(公告)日：2012-05-10

申请号：US13239885

申请日：2011-09-22

申请人： SeYoung Jeong ,  Sunpil Youn ,  Hogeon Song

发明人： SeYoung Jeong ,  Sunpil Youn ,  Hogeon Song

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/481 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/108 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T428/12708 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein a number of the second connection structures is less than a number of the first connection structures.

摘要翻译： 半导体器件包括第一半导体芯片，设置在第一半导体芯片的第一侧上的第一连接结构，设置在第一半导体芯片的第二侧上的第二半导体芯片，以及设置在第一和第二半导体芯片之间的第二连接结构 半导体芯片，其中多个第二连接结构小于第一连接结构的数量。

公开(公告)号：US09793165B2

公开(公告)日：2017-10-17

申请号：US13345441

申请日：2012-01-06

申请人： Seyoung Jeong ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

发明人： Seyoung Jeong ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

IPC分类号： H01L21/768 ,  H01L21/683 ,  H01L25/065 ,  H01L25/10 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05109 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.

公开(公告)号：US20120091580A1

公开(公告)日：2012-04-19

申请号：US13211574

申请日：2011-08-17

申请人： SeYoung Jeong ,  Hogeon Song ,  Chungsun Lee ,  Ho-Jin Lee

发明人： SeYoung Jeong ,  Hogeon Song ,  Chungsun Lee ,  Ho-Jin Lee

IPC分类号： H01L23/48

CPC分类号： H01L23/481 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3128 ,  H01L24/04 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1304 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.

摘要翻译： 提供一种半导体器件。 半导体器件可以包括第一半导体芯片，其包括具有第一突起高度的第一至第二硅通孔以及具有大于第一突出高度的第二突出高度的第二穿透硅通孔，该第二突出高度穿过第一半导体芯片的至少一部分 ，第二半导体芯片可以电连接到第一通孔硅通孔，并且第三半导体芯片可以电连接到第二通孔硅通孔。

公开(公告)号：US20120049349A1

公开(公告)日：2012-03-01

申请号：US13178156

申请日：2011-07-07

申请人： Ho-Jin LEE ,  Donghyeon JANG ,  Hogeon SONG ,  SeYoung JEONG ,  Minseung YOON ,  Jung-Hwan KIM

发明人： Ho-Jin LEE ,  Donghyeon JANG ,  Hogeon SONG ,  SeYoung JEONG ,  Minseung YOON ,  Jung-Hwan KIM

IPC分类号： H01L23/498 ,  H01L21/28

CPC分类号： H01L21/76898

摘要： Provided is a semiconductor chip including a back side insulation structure. The semiconductor chip may include a semiconductor layer including an active surface and an inactive surface facing each other; the insulating layer includes a first surface adjacent to the inactive surface and a second surface facing the first surface. The insulating layer is disposed on the inactive surface of the semiconductor layer. A penetrating electrode fills a hole penetrating the semiconductor layer and the insulating layer. The through electrode comprises a protrusive portion protruding from the second surface of the insulating layer.

摘要翻译： 提供了包括背面绝缘结构的半导体芯片。 半导体芯片可以包括半导体层，其包括相互面对的有源表面和非活性表面; 绝缘层包括与非活性表面相邻的第一表面和面向第一表面的第二表面。 绝缘层设置在半导体层的非活性表面上。 穿透电极填充穿透半导体层和绝缘层的孔。 贯通电极包括从绝缘层的第二表面突出的突出部分。