公开(公告)号：US09406593B2

公开(公告)日：2016-08-02

申请号：US14314485

申请日：2014-06-25

申请人： Takuya Kadoguchi ,  Takahiro Hirano ,  Arata Harada ,  Masayoshi Nishihata ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Takahiro Hirano ,  Arata Harada ,  Masayoshi Nishihata ,  Tomomi Okumura

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/85 ,  H01L24/89 ,  H01L2224/48247 ,  H01L2224/85001 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to the disclosure, a lead frame is provided, which includes: a first island and a second island that are arranged side by side; an outer peripheral frame; first leads that extend in a second direction perpendicular to the first direction; second leads that extend in the second direction; a first coupling portion that couples the first leads to the frame; a second coupling portion that couples the second leads to the frame; an intermediate portion formed between the first and second coupling portions in the first direction such that it extends in the second direction to terminate before the space between the first and second islands; and a deformation restraining portion formed or provided in at least one of the first leads, the second leads, the first and the second coupling portions and configured to restrain deformations of the first and second leads during a molding process.

摘要翻译： 根据本发明，提供一种引线框，其包括：并排布置的第一岛和第二岛; 外围框架; 在垂直于第一方向的第二方向上延伸的第一引线; 在第二方向延伸的第二引线; 第一耦合部分，其将第一引线耦合到框架; 第二耦合部分，其将所述第二引线耦合到所述框架; 在第一方向上形成在第一和第二联接部分之间的中间部分，使得其在第二方向上延伸以在第一和第二岛之间的空间之前终止; 以及形成或设置在所述第一引线，所述第二引线，所述第一和第二联接部中的至少一个中并且被构造成在模制处理期间抑制所述第一引线和所述第二引线的变形的变形抑制部。

公开(公告)号：US20140374895A1

公开(公告)日：2014-12-25

申请号：US14368628

申请日：2012-12-21

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

IPC分类号： H01L23/367 ,  H01L23/31

CPC分类号： H01L23/3672 ,  H01L23/3142 ,  H01L23/4334 ,  H01L24/33 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

摘要翻译： 半导体器件包括多个半导体元件，每个半导体元件具有前表面和后表面; 位于所述半导体元件的前表面侧并散发由所述半导体元件产生的热的前表面侧散热器; 背面侧散热器，位于半导体元件的背面侧，散发由半导体元件产生的热量; 覆盖前表面侧散热片前表面的半导体器件和后表面侧散热片后表面的密封材料; 涂覆在前表面侧散热片和背面侧散热片中的至少一个上的底漆，改善与密封部件的接触; 以及位于所述多个半导体元件之间的突出部分，位于所述前表面侧散热器的后表面和所述背面侧散热片的前表面中的至少一个上。

公开(公告)号：US20170110819A1

公开(公告)日：2017-04-20

申请号：US15123145

申请日：2015-01-19

申请人： Masayoshi NISHIHATA

发明人： Takuya KADOGUCHI ,  Arata HARADA ,  Takahiro HIRANO ,  Masayoshi NISHIHATA ,  Keita FUKUTANI ,  Tomomi OKUMURA

IPC分类号： H01R13/03 ,  H01R13/11 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01R13/035 ,  C23C18/1653 ,  C23C18/32 ,  C25D3/12 ,  H01L23/295 ,  H01L23/3114 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49861 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H01R12/7076 ,  H01R12/716 ,  H01R12/777 ,  H01R13/03 ,  H01R13/113 ,  H01L2924/00

摘要： A terminal connection structure includes a male terminal; and a female terminal having an elasticity and configured to have the male terminal fitted therein such that the female terminal sandwiches the male terminal from opposite sides; wherein the male includes a base material, a first primary coat coated on the base material, a second primary coat coated on the first primary coat, and a surface layer coated on the second primary coat, and the first primary coat and the second primary coat have different hardnesses.

公开(公告)号：US08497572B2

公开(公告)日：2013-07-30

申请号：US13173248

申请日：2011-06-30

申请人： Keita Fukutani ,  Kuniaki Mamitsu ,  Yasushi Ookura ,  Masayoshi Nishihata ,  Hiroyuki Wado ,  Syun Sugiura

发明人： Keita Fukutani ,  Kuniaki Mamitsu ,  Yasushi Ookura ,  Masayoshi Nishihata ,  Hiroyuki Wado ,  Syun Sugiura

IPC分类号： H01L23/34

CPC分类号： H01L24/32 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

摘要： In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.

摘要翻译： 在半导体模块中，第一散热器设置在构成上臂的第一半导体芯片的后表面上，第二散热器通过第一端子设置在第一半导体芯片的前表面上。 第三散热器设置在构成下臂的第二半导体芯片的后表面上，第四散热器通过第二端子设置在第二半导体芯片的前表面上。 用于连接上臂和下臂的连接部分与第一端子成一体，并且相对于第一端子倾斜地连接到第三散热器。

公开(公告)号：US20120001318A1

公开(公告)日：2012-01-05

申请号：US13170475

申请日：2011-06-28

申请人： Kuniaki MAMITSU ,  Takahisa Kaneko ,  Masaya Tonomoto ,  Masayoshi Nishihata ,  Hiroyuki Wado ,  Chikage Noritake ,  Eiji Nomura ,  Toshiki Itoh

发明人： Kuniaki MAMITSU ,  Takahisa Kaneko ,  Masaya Tonomoto ,  Masayoshi Nishihata ,  Hiroyuki Wado ,  Chikage Noritake ,  Eiji Nomura ,  Toshiki Itoh

IPC分类号： H01L23/473

CPC分类号： H01L23/473 ,  H01L23/3672 ,  H01L23/3736 ,  H01L23/427 ,  H01L23/4334 ,  H01L23/46 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1517 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

摘要翻译： 半导体器件包括封装和冷却器。 半导体封装包括半导体元件，金属构件和用于封装半导体元件和金属构件的模制构件。 金属构件具有热连接到半导体元件的金属部分，金属部分上的绝缘层和绝缘层上的导电层。 导电层至少部分地暴露在模制构件的外部，并且用作用于辐射半导体元件的热的辐射表面。 冷却器具有冷却剂通道，冷却剂通过该通道冷却导电层。 导电层和冷却器电连接在一起。

公开(公告)号：US20110042741A1

公开(公告)日：2011-02-24

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L29/772 ,  H01L23/498

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US08994167B2

公开(公告)日：2015-03-31

申请号：US14368628

申请日：2012-12-21

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Tomohiro Miyazaki ,  Masayoshi Nishihata ,  Tomomi Okumura

IPC分类号： H01L29/72 ,  H01L23/367 ,  H01L23/31

CPC分类号： H01L23/3672 ,  H01L23/3142 ,  H01L23/4334 ,  H01L24/33 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

摘要翻译： 半导体器件包括多个半导体元件，每个半导体元件具有前表面和后表面; 位于所述半导体元件的前表面侧并散发由所述半导体元件产生的热的前表面侧散热器; 背面侧散热器，位于半导体元件的背面侧，散发由半导体元件产生的热量; 覆盖前表面侧散热片前表面的半导体器件和后表面侧散热片后表面的密封材料; 涂覆在前表面侧散热片和背面侧散热片中的至少一个上的底漆，改善与密封部件的接触; 以及位于所述多个半导体元件之间的突出部分，位于所述前表面侧散热器的后表面和所述背面侧散热片的前表面中的至少一个上。

公开(公告)号：US08441122B2

公开(公告)日：2013-05-14

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L23/34

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US09711884B2

公开(公告)日：2017-07-18

申请号：US15123145

申请日：2015-01-19

申请人： Masayoshi Nishihata

发明人： Takuya Kadoguchi ,  Arata Harada ,  Takahiro Hirano ,  Masayoshi Nishihata ,  Keita Fukutani ,  Tomomi Okumura

IPC分类号： H01R9/24 ,  H01R13/03 ,  H01L23/31 ,  H01L23/495 ,  H01L23/29 ,  H01R13/11

CPC分类号： H01R13/035 ,  C23C18/1653 ,  C23C18/32 ,  C25D3/12 ,  H01L23/295 ,  H01L23/3114 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49861 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H01R12/7076 ,  H01R12/716 ,  H01R12/777 ,  H01R13/03 ,  H01R13/113 ,  H01L2924/00

摘要： A terminal connection structure includes a male terminal; and a female terminal having an elasticity and configured to have the male terminal fitted therein such that the female terminal sandwiches the male terminal from opposite sides; wherein the male includes a base material, a first primary coat coated on the base material, a second primary coat coated on the first primary coat, and a surface layer coated on the second primary coat, and the first primary coat and the second primary coat have different hardnesses.

公开(公告)号：US08884411B2

公开(公告)日：2014-11-11

申请号：US14112408

申请日：2012-04-18

申请人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

发明人： Takuya Kadoguchi ,  Shingo Iwasaki ,  Takanori Kawashima ,  Tomomi Okumura ,  Masayoshi Nishihata

IPC分类号： H01L23/02 ,  H01L23/00 ,  H01L23/495

CPC分类号： H01L24/30 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the second thick plate portion; and a second thin plate portion that is provided on the third thick plate portion, is formed by a conductor, and is thinner than the third thick plate portion. The first thin plate portion and the second thin plate portion are fixed together and electrically connected.

摘要翻译： 半导体器件包括第一半导体元件; 与第一半导体元件的下表面侧的电极电连接并由导体形成的第一厚板部; 第二半导体元件，被布置成使得第二半导体元件的主表面面对第一半导体元件的主表面; 第二厚板部分，电连接到第二半导体元件的下表面侧的电极，并由导体形成; 第三厚板部，与第一半导体元件的上表面侧的电极电连接，由导体形成; 与第二半导体元件的上表面侧的电极电连接并由导体形成的第四厚板部; 设置在第二厚板部分上的第一薄板部分由导体形成，并且比第二厚板部分薄; 并且设置在第三厚板部分上的第二薄板部分由导体形成，并且比第三厚板部分薄。 第一薄板部分和第二薄板部分固定在一起并电连接。