Flip chip bump structure and fabrication method
    4.
    发明授权
    Flip chip bump structure and fabrication method 有权
    倒装芯片凸块结构及制作方法

    公开(公告)号:US07932170B1

    公开(公告)日:2011-04-26

    申请号:US12144145

    申请日:2008-06-23

    IPC分类号: H01L21/44

    摘要: A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump.

    摘要翻译: 一种方法包括在电介质层的第一表面上形成图案化的聚集层,所述图案化的构建层包括图案化的积层层,其暴露耦合到电介质层的迹线。 导体层被闪镀在图案化的积层和图案化的积层层开口内。 图案化的积层层开口填充有覆盖层导电填料层。 将覆盖层导电填料层和导体层平坦化以形成倒装芯片凸块。

    Flip chip bump structure and fabrication method
    7.
    发明授权
    Flip chip bump structure and fabrication method 有权
    倒装芯片凸块结构及制作方法

    公开(公告)号:US08390116B1

    公开(公告)日:2013-03-05

    申请号:US13065298

    申请日:2011-03-18

    IPC分类号: H01L23/48

    摘要: A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump.

    摘要翻译: 一种方法包括在电介质层的第一表面上形成图案化的聚集层,所述图案化的构建层包括图案化的积层层,其暴露耦合到电介质层的迹线。 导体层被闪镀在图案化的积层和图案化的积层层开口内。 图案化的积层层开口填充有覆盖层导电填料层。 将覆盖层导电填料层和导体层平坦化以形成倒装芯片凸块。