公开(公告)号：US20110147922A1

公开(公告)日：2011-06-23

申请号：US12640752

申请日：2009-12-17

Applicant: Raschid J. BEZAMA ,  Timothy H. DAUBENSPECK ,  Gary LaFONTANT ,  Ian D. MELVILLE ,  Ekta MISRA ,  George J. SCOTT ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN ,  Robin A. SUSKO ,  Thomas A. WASSICK ,  Xiaojin WEI ,  Steven L. WRIGHT

Inventor： Raschid J. BEZAMA ,  Timothy H. DAUBENSPECK ,  Gary LaFONTANT ,  Ian D. MELVILLE ,  Ekta MISRA ,  George J. SCOTT ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN ,  Robin A. SUSKO ,  Thomas A. WASSICK ,  Xiaojin WEI ,  Steven L. WRIGHT

IPC: H01L23/498 ,  H01L21/3205

CPC classification number: H01L23/49816 ,  H01L21/76804 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05094 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

Abstract translation: 公开了减少焊球中的最大电流密度的结构和方法。 一种方法包括在最后的布线层中形成接触焊盘，并且形成从接触焊盘的侧边缘延伸到多个通孔中的多个通孔的接触焊盘的多个导线。 多个导线中的每一根具有基本上相同的电阻。

公开(公告)号：US20080225484A1

公开(公告)日：2008-09-18

申请号：US11687037

申请日：2007-03-16

Applicant: William L. Brodsky ,  Peter J. Brofman ,  James A. Busby ,  Bruce J. Chamberlin ,  Scott A. Cummings ,  David L. Edwards ,  Thomas J. Fleischman ,  Michael J. Griffin ,  Sushumna Iruvanti ,  David C. Long ,  Jennifer V. Muncy ,  Robin A. Susko

Inventor： William L. Brodsky ,  Peter J. Brofman ,  James A. Busby ,  Bruce J. Chamberlin ,  Scott A. Cummings ,  David L. Edwards ,  Thomas J. Fleischman ,  Michael J. Griffin ,  Sushumna Iruvanti ,  David C. Long ,  Jennifer V. Muncy ,  Robin A. Susko

IPC: H05K7/20

CPC classification number: H01L23/42 ,  H01L23/433 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2924/3511 ,  H01L2224/0401

Abstract: Methods, apparatus and assemblies for enhancing heat transfer in electronic components using a flexible thermal pillow. The flexible thermal pillow has a thermally conductive material sealed between top and bottom conductive layers, with the bottom layer having a flexible reservoir residing on opposing sides of a central portion of the pillow that has a gap. The pillow may have roughened internal surfaces to increase an internal surface area within the pillow for enhanced heat dissipation. In an electronic assembly, the central portion of the pillow resides between a heat sink and heat-generating component for the thermal coupling there-between. During thermal cycling, the flexible reservoir of the pillow expands to retain thermally conductive material extruded from the gap, and then contracts to force such extruded material back into the gap. An external pressure source may contact the pillow for further forcing the extruded thermally conductive material back into the gap.

Abstract translation: 使用柔性热枕头增强电子部件传热的方法，装置和组件。 柔性热枕头具有密封在顶部和底部导电层之间的导热材料，底层具有位于枕头的中心部分的具有间隙的相对侧上的柔性容器。 枕头可能具有粗糙的内表面以增加枕头内的内表面积，以增强散热。 在电子组件中，枕头的中心部分位于散热器和用于其之间的热耦合的发热部件之间。 在热循环期间，枕头的柔性储存器膨胀以保持从间隙挤出的导热材料，然后收缩以迫使这种挤出的材料回到间隙中。 外部压力源可以接触枕头，以进一步迫使挤出的导热材料回到间隙中。

公开(公告)号：US06569711B1

公开(公告)日：2003-05-27

申请号：US09643522

申请日：2000-08-22

Applicant: Robin A. Susko ,  James Wilson

Inventor： Robin A. Susko ,  James Wilson

IPC: H01L2144

CPC classification number: H01L21/563 ,  H01L23/293 ,  H01L23/3737 ,  H01L23/49894 ,  H01L24/29 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05599

Abstract: CTE differentials between chips and organic dielectric carriers, boards or other substrates to which the chips are attached are accommodated with a layer of a thermoplastic material, preferably a thermotropic polymer whose physical properties can be altered by extrusion or other physical processes, such as liquid crystalline polyesters, that modifies the CTE of at least one component of the package and thereby reduces CTE differentials. The material may be applied to the entire surface of a chip carrier, printed circuit or other substrate, or form an interior layer of a multi-layered structure. It may also be applied to selected regions or areas on the surface of a carrier or other substrate where adjustment is required.

Abstract translation: 芯片与有机电介质载体，芯片或其它芯片所连接的其它基板之间的CTE差异容纳有一层热塑性材料，优选一种热致变性聚合物，其物理性能可以通过挤出或其它物理过程如液晶 聚酯，其改变包装的至少一种组分的CTE，从而降低CTE差异。 该材料可以施加到芯片载体，印刷电路或其它基底的整个表面，或者形成多层结构的内层。 还可以将其应用于需要调整的载体或其他基板的表面上的选定区域或区域。

公开(公告)号：US5956235A

公开(公告)日：1999-09-21

申请号：US22848

申请日：1998-02-12

Applicant: John S. Kresge ,  Robin A. Susko ,  James W. Wilson

Inventor： John S. Kresge ,  Robin A. Susko ,  James W. Wilson

IPC: H01R13/24 ,  H05K1/11 ,  H05K1/18 ,  H05K3/34 ,  H01R9/00

CPC classification number: H01R13/2414 ,  H01R12/52 ,  H05K3/3436 ,  H01L2224/16237 ,  H05K2201/0212 ,  Y02P70/613

Abstract: A flexible interconnect for flexibly connecting an integrated circuit chip to a substrate. The flexible interconnect includes a flexible core, formed of a polymeric material, fully covered by a layer of an electrically conductive metal. A layer of a compliant material is provided beneath the input/output pad of the substrate and/or integrated circuit chip to reduce mechanical stresses on the flexible interconnect. The substrate and integrated circuit chip may include depressions to receive ends of the flexible interconnect. In one embodiment, the flexible interconnect may be tubular in shape and positioned on a protrusion formed on the substrate.

Abstract translation: 用于将集成电路芯片灵活连接到基板的柔性互连。 柔性互连件包括由聚合材料形成的柔性芯，其完全由导电金属层覆盖。 在衬底和/或集成电路芯片的输入/输出焊盘下方提供柔性材料层，以减少柔性互连上的机械应力。 衬底和集成电路芯片可以包括凹陷以接收柔性互连的端部。 在一个实施例中，柔性互连可以是管状形状并且定位在形成在基板上的突起上。

公开(公告)号：US20090057865A1

公开(公告)日：2009-03-05

申请号：US11847606

申请日：2007-08-30

Applicant: William L. Brodsky ,  James A. Busby ,  Bruce J. Chamberlin ,  Mitchell G. Ferrill ,  David L. Questad ,  Robin A. Susko

Inventor： William L. Brodsky ,  James A. Busby ,  Bruce J. Chamberlin ,  Mitchell G. Ferrill ,  David L. Questad ,  Robin A. Susko

IPC: H01L23/22 ,  H01L21/54 ,  H01L23/24

CPC classification number: H01L23/3121 ,  H01L23/4006 ,  H01L23/42 ,  H01L23/49827 ,  H01L23/5385 ,  H01L2023/4081 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2224/05599

Abstract: An LGA structure is provided having at least one semiconductor device over a substrate and a mechanical load apparatus over the semiconductor device. The structure includes a load-distributing material between the mechanical load apparatus and the substrate. Specifically, the load-distributing material is proximate a first side of the semiconductor device and a second side of the semiconductor device opposite the first side of the semiconductor device. Furthermore, the load-distributing material completely surrounds the semiconductor device and contacts the mechanical load apparatus, the substrate, and the semiconductor device. The load-distributing material can be thermally conductive and comprises an elastomer and/or a liquid. The load-distributing material comprises a LGA interposer adapted to connect the substrate to a PCB below the substrate and/or a second substrate. Moreover, the load-distributing material comprises compressible material layers and rigid material layers. The load-distributing material comprises a rigid material incased in a compressible material.

Abstract translation: 提供LGA结构，其具有在衬底上的至少一个半导体器件和半导体器件上的机械负载设备。 该结构包括在机械负载装置和基板之间的负载分配材料。 具体地，负载分布材料靠近半导体器件的第一侧，并且半导体器件的与半导体器件的第一侧相对的第二侧。 此外，负载分布材料完全围绕半导体器件并接触机械负载装置，衬底和半导体器件。 载荷分布材料可以是导热的并且包括弹性体和/或液体。 负载分配材料包括适于将衬底连接到衬底下面的PCB和/或第二衬底的LGA插入器。 此外，载荷分布材料包括可压缩材料层和刚性材料层。 载荷分配材料包括浸在可压缩材料中的刚性材料。

公开(公告)号：US06228246B1

公开(公告)日：2001-05-08

申请号：US09347581

申请日：1999-07-01

Applicant: Madhav Datta ,  Raymond T. Galasco ,  Lawrence P. Lehman ,  Roy H. Magnuson ,  Robin A. Susko ,  Robert D. Topa

Inventor： Madhav Datta ,  Raymond T. Galasco ,  Lawrence P. Lehman ,  Roy H. Magnuson ,  Robin A. Susko ,  Robert D. Topa

IPC: C25F300

CPC classification number: H05K3/44 ,  C25F3/00 ,  H05K3/07 ,  H05K2201/0338 ,  H05K2201/0347 ,  H05K2203/0285 ,  H05K2203/0361

Abstract: A method of removing a metal skin from a through-hole surface of a copper-Invar-copper (CIC) laminate without causing differential etchback of the laminate. The metal skin includes debris deposited on the through-hole surface as the through hole is being formed by laser or mechanical drilling of a substrate that includes the laminate as an inner plane. Removing the metal skin combines electrochemical polishing (ECP) with ultrasonics. ECP dissolves the metal skin in an acid solution, while ultrasonics agitates and circulates the acid solution to sweep the metal skin out of the through hole. ECP is activated when a pulse power supply is turned on and generates a periodic voltage pulse from a pulse power supply whose positive terminal is coupled to the laminate and whose negative terminal is coupled to a conductive cathode. After the metal skin is removed, the laminate is differentially etched such that the copper is etched at a faster rate than the Invar. To prevent the differential etching, a copper layer is formed on a surface of the substrate with an electrical resistance R1 between the copper layer and the positive terminal of the pulse power supply. Additionally, an electrical resistance R2 is formed between the laminate and the positive terminal of the pulse power supply. Adjustment of R1 and R2 controls the relative etch rates of the copper and the Invar.

Abstract translation: 从铜 - 堇青铜（CIC）层压板的通孔表面去除金属表皮而不会引起层压板的不均匀回蚀的方法。 金属皮肤包括沉积在通孔表面上的碎屑，因为通孔是通过激光或机械钻孔形成的，所述基底包括层压体作为内平面。 去除金属皮肤结合电化学抛光（ECP）与超声波。 ECP将金属皮肤溶解在酸性溶液中，同时超声波搅拌并循环酸溶液以将金属皮肤从通孔中扫出。 当脉冲电源接通时，ECP被激活，并从脉冲电源产生周期性的电压脉冲，该脉冲电源的正极端子耦合到层压板并且其负极端子连接到导电阴极。 在去除金属表皮之后，层压体被差异蚀刻，使得以比Invar更快的速度蚀刻铜。 为了防止差分蚀刻，在衬底的表面上在铜层和脉冲电源的正端之间具有电阻R1形成铜层。 此外，在层压体和脉冲电源的正极端之间形成电阻R2。 R1和R2的调整控制铜和殷钢的相对蚀刻速率。

公开(公告)号：US4830706A

公开(公告)日：1989-05-16

申请号：US915462

申请日：1986-10-06

Applicant: Ronald S. Horwath ,  John R. Susko ,  Robin A. Susko

Inventor： Ronald S. Horwath ,  John R. Susko ,  Robin A. Susko

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/4803 ,  H01L21/31138

Abstract: Sloped vias are formed in a resinous layer made from a material which is curable in stages, which can be coated on a substrate prior to partial curing, which adheres to the substrate and which shrinks upon full curing by a process which includes first using a dry, directional etch to form straight walled vias in a partially cured layer of the material coated on the substrate and then fully curing the layer. The straight walled vias are changed to sloped vias during final cure when adhesive contact between the substrate and the layer of resinous material inhibits shrinking of the side of the resinous layer which contacts the substrate, while the unsupported side of the layer is free to shrink. Such sloped vias are observed to improve the integrity of conductive coatings placed in the vias by reducing cracking, peeling and flaking thereof. Sloped vias with conductive coatings are useful in the construction of computer components.

Abstract translation: 倾斜通孔形成在由可分阶段固化的材料制成的树脂层中，其可以在部分固化之前涂覆在基底上，该部分固化粘附到基底上，并且通过包括首先使用干燥的方法完全固化的收缩 定向蚀刻以在涂覆在基材上的材料的部分固化层中形成直壁通孔，然后完全固化该层。 当基材和树脂材料层之间的粘合剂接触抑制与基材接触的树脂层的侧面的收缩，同时层的无支撑侧自由收缩时，在最终固化期间将直壁通孔改变为倾斜的通孔。 观察到这样的倾斜通孔，通过减少开裂，剥离和剥落来改善放置在通孔中的导电涂层的完整性。 带导电涂层的斜槽可用于计算机部件的构造。

公开(公告)号：US4654115A

公开(公告)日：1987-03-31

申请号：US849247

申请日：1986-04-08

Applicant: Frank D. Egitto ,  Francis Emmi ,  Walter E. Mlynko ,  Robin A. Susko

Inventor： Frank D. Egitto ,  Francis Emmi ,  Walter E. Mlynko ,  Robin A. Susko

IPC: B08B3/08 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05K3/00 ,  H05K3/08 ,  H05K3/26 ,  H05K3/42 ,  B44C1/22 ,  B29C37/00 ,  C03C15/00 ,  C03C25/06

CPC classification number: H05K3/0055 ,  H05K2203/095

Abstract: Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.

Abstract translation: 通过首先从孔的边缘附近去除污染物，通过在气态等离子体中蚀刻从孔中除去污染物。 接下来，在边缘附近设置掩模，以防止与不同于在第一蚀刻步骤中使用的气态等离子体接触的气体等离子体进行蚀刻。 然后在气体等离子体中蚀刻孔，以从孔的中心附近的孔的内部除去污染物，由此掩模保护边缘不被蚀刻。

公开(公告)号：US07795724B2

公开(公告)日：2010-09-14

申请号：US11847606

申请日：2007-08-30

Applicant: William L. Brodsky ,  James A. Busby ,  Bruce J. Chamberlin ,  Mitchell G. Ferrill ,  David L. Questad ,  Robin A. Susko

Inventor： William L. Brodsky ,  James A. Busby ,  Bruce J. Chamberlin ,  Mitchell G. Ferrill ,  David L. Questad ,  Robin A. Susko

IPC: H01L23/34

CPC classification number: H01L23/3121 ,  H01L23/4006 ,  H01L23/42 ,  H01L23/49827 ,  H01L23/5385 ,  H01L2023/4081 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2224/05599

Abstract: An LGA structure is provided having at least one semiconductor device over a substrate and a mechanical load apparatus over the semiconductor device. The structure includes a load-distributing material between the mechanical load apparatus and the substrate. Specifically, the load-distributing material is proximate a first side of the semiconductor device and a second side of the semiconductor device opposite the first side of the semiconductor device. Furthermore, the load-distributing material completely surrounds the semiconductor device and contacts the mechanical load apparatus, the substrate, and the semiconductor device. The load-distributing material can be thermally conductive and comprises an elastomer and/or a liquid. The load-distributing material comprises a LGA interposer adapted to connect the substrate to a PCB below the substrate and/or a second substrate. Moreover, the load-distributing material comprises compressible material layers and rigid material layers. The load-distributing material comprises a rigid material incased in a compressible material.

Abstract translation: 提供LGA结构，其具有在衬底上的至少一个半导体器件和半导体器件上的机械负载设备。 该结构包括在机械负载装置和基板之间的负载分配材料。 具体地，负载分布材料靠近半导体器件的第一侧，并且半导体器件的与半导体器件的第一侧相对的第二侧。 此外，负载分布材料完全围绕半导体器件并接触机械负载装置，衬底和半导体器件。 载荷分布材料可以是导热的并且包括弹性体和/或液体。 负载分配材料包括适于将衬底连接到衬底下面的PCB和/或第二衬底的LGA插入器。 此外，载荷分布材料包括可压缩材料层和刚性材料层。 载荷分配材料包括浸在可压缩材料中的刚性材料。

公开(公告)号：US07709951B2

公开(公告)日：2010-05-04

申请号：US11687037

申请日：2007-03-16

Applicant: William L. Brodsky ,  Peter J. Brofman ,  James A. Busby ,  Bruce J. Chamberlin ,  Scott A. Cummings ,  David L. Edwards ,  Thomas J. Fleischman ,  Michael J. Griffin, IV ,  Sushumna Iruvanti ,  David C. Long ,  Jennifer V. Muncy ,  Robin A. Susko

Inventor： William L. Brodsky ,  Peter J. Brofman ,  James A. Busby ,  Bruce J. Chamberlin ,  Scott A. Cummings ,  David L. Edwards ,  Thomas J. Fleischman ,  Michael J. Griffin, IV ,  Sushumna Iruvanti ,  David C. Long ,  Jennifer V. Muncy ,  Robin A. Susko

IPC: H01L23/34 ,  H01L23/495 ,  H01L23/48

CPC classification number: H01L23/42 ,  H01L23/433 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2924/3511 ,  H01L2224/0401

Abstract: Methods, apparatus and assemblies for enhancing heat transfer in electronic components using a flexible thermal pillow. The flexible thermal pillow has a thermally conductive material sealed between top and bottom conductive layers, with the bottom layer having a flexible reservoir residing on opposing sides of a central portion of the pillow that has a gap. The pillow may have roughened internal surfaces to increase an internal surface area within the pillow for enhanced heat dissipation. In an electronic assembly, the central portion of the pillow resides between a heat sink and heat-generating component for the thermal coupling there-between. During thermal cycling, the flexible reservoir of the pillow expands to retain thermally conductive material extruded from the gap, and then contracts to force such extruded material back into the gap. An external pressure source may contact the pillow for further forcing the extruded thermally conductive material back into the gap.

Abstract translation: 使用柔性热枕头增强电子部件传热的方法，装置和组件。 柔性热枕头具有密封在顶部和底部导电层之间的导热材料，底层具有位于枕头的中心部分的具有间隙的相对侧上的柔性容器。 枕头可能具有粗糙的内表面以增加枕头内的内表面积，以增强散热。 在电子组件中，枕头的中心部分位于散热器和用于其之间的热耦合的发热部件之间。 在热循环期间，枕头的柔性储存器膨胀以保持从间隙挤出的导热材料，然后收缩以迫使这种挤出的材料回到间隙中。 外部压力源可以接触枕头，以进一步迫使挤出的导热材料回到间隙中。