公开(公告)号：US20110147922A1

公开(公告)日：2011-06-23

申请号：US12640752

申请日：2009-12-17

申请人： Raschid J. BEZAMA ,  Timothy H. DAUBENSPECK ,  Gary LaFONTANT ,  Ian D. MELVILLE ,  Ekta MISRA ,  George J. SCOTT ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN ,  Robin A. SUSKO ,  Thomas A. WASSICK ,  Xiaojin WEI ,  Steven L. WRIGHT

发明人： Raschid J. BEZAMA ,  Timothy H. DAUBENSPECK ,  Gary LaFONTANT ,  Ian D. MELVILLE ,  Ekta MISRA ,  George J. SCOTT ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN ,  Robin A. SUSKO ,  Thomas A. WASSICK ,  Xiaojin WEI ,  Steven L. WRIGHT

IPC分类号： H01L23/498 ,  H01L21/3205

CPC分类号： H01L23/49816 ,  H01L21/76804 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05094 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

摘要翻译： 公开了减少焊球中的最大电流密度的结构和方法。 一种方法包括在最后的布线层中形成接触焊盘，并且形成从接触焊盘的侧边缘延伸到多个通孔中的多个通孔的接触焊盘的多个导线。 多个导线中的每一根具有基本上相同的电阻。

公开(公告)号：US20120187558A1

公开(公告)日：2012-07-26

申请号：US13433974

申请日：2012-03-29

申请人： Charles L. ARVIN ,  Raschid J. BEZAMA ,  Harry D. COX ,  Timothy H. DAUBENSPECK ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN

发明人： Charles L. ARVIN ,  Raschid J. BEZAMA ,  Harry D. COX ,  Timothy H. DAUBENSPECK ,  Krystyna W. SEMKOW ,  Timothy D. SULLIVAN

IPC分类号： H01L23/498

CPC分类号： H01L24/05 ,  C25D5/02 ,  C25D5/14 ,  C25D5/48 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05075 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/01027

摘要： Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

摘要翻译： 提供互连结构及其制造方法。 互连结构提供用于改善载流能力（例如，电流扩展）的高可靠性铜互连结构。 该结构包括在沟槽中形成的凸块下金属。 凸起下冶金至少包括：粘合层; 电镀阻挡层; 以及设置在粘合层和镀层阻挡层之间的镀覆导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。

公开(公告)号：US20120280399A1

公开(公告)日：2012-11-08

申请号：US13098816

申请日：2011-05-02

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02126 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05664 ,  H01L2224/061 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/141 ,  H01L2224/14104 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： Structures are provided with raised buffer pads for solder bumps. Methods are also provided for forming the raised buffer pads for solder bumps. The method includes forming a raised localized buffer pad structure on a tensile side of a last metal layer of a solder bump connection. The raised localized buffer pad structure increases a height of a portion of a pad structure of the solder bump connection with respect to a compressive side of the last metal layer.

摘要翻译： 结构提供有用于焊料凸块的凸起缓冲垫。 还提供了用于形成用于焊料凸块的凸起缓冲垫的方法。 该方法包括在焊料凸块连接的最后金属层的拉伸侧上形成升高的局部缓冲垫结构。 凸起的局部缓冲垫结构相对于最后一个金属层的压缩侧增加焊料凸块连接的焊盘结构的一部分的高度。

公开(公告)号：US20130269974A1

公开(公告)日：2013-10-17

申请号：US13444343

申请日：2012-04-11

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01B3/30 ,  H01B13/00 ,  H01B13/06 ,  H01B7/00

CPC分类号： H01L24/05 ,  H01B3/306 ,  H01B3/307 ,  H01L21/02118 ,  H01L21/76877 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/48

摘要： Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The method further includes forming a protective layer over the organic insulator layer. The method further includes forming a via in the organic insulator layer over the metal wiring layer. The method further includes depositing a metal layer in the via and on the protective layer. The method further includes patterning the metal layer with an etch chemistry that is damaging to the organic insulator layer.

公开(公告)号：US20110031616A1

公开(公告)日：2011-02-10

申请号：US12908554

申请日：2010-10-20

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/498

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming a plurality of trenches in a dielectric layer extending to an underlying metal layer. The method further includes depositing metal in the plurality of trenches to form discrete metal line islands in contact with the underlying metal layer. The method also includes forming a solder bump in electrical connection to the plurality of metal line islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在延伸到下面的金属层的电介质层中形成多个沟槽。 该方法还包括在多个沟槽中沉积金属以形成与下面的金属层接触的离散金属线岛。 该方法还包括形成与多个金属线岛电连接的焊料凸块。

公开(公告)号：US20100164104A1

公开(公告)日：2010-07-01

申请号：US12344774

申请日：2008-12-29

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05088 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在电介质层中形成上布线层，并在上布线层上淀积一层或多层介电层。 该方法还包括在延伸到上布线层的一个或多个电介质层中形成多个离散的沟槽。 该方法还包括在多个离散的沟槽中沉积限制极限的冶金或凸块下的冶金，以形成与上部绞合层接触的离散的金属岛。 形成与多个离散金属岛电连接的焊料凸块。

公开(公告)号：US20130320521A1

公开(公告)日：2013-12-05

申请号：US13483663

申请日：2012-05-30

申请人： Timothy H. DAUBENSPECK ,  Steven E. MOLIS ,  Gordon C. OSBORNE, JR. ,  Wolfgang SAUTER ,  Edmund J. SPROGIS

发明人： Timothy H. DAUBENSPECK ,  Steven E. MOLIS ,  Gordon C. OSBORNE, JR. ,  Wolfgang SAUTER ,  Edmund J. SPROGIS

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L21/6835 ,  H01L21/486 ,  H01L21/76829 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2225/06513 ,  H01L2225/06517 ,  Y10S438/976 ,  H01L2924/014

摘要： A releasable buried layer for 3-D fabrication and methods of manufacturing is disclosed. The method includes forming an interposer structure which includes forming a carbon rich dielectric releasable layer over a wafer. The method further includes forming back end of the line (BEOL) layers over the carbon rich dielectric layer, including wiring layers and solder bumps. The method further includes bonding the solder bumps to a substrate using flip chip processes. The flip chip processes comprises reflowing the solder bumps and rapidly cooling down the solder bumps which releases the carbon rich dielectric releasable layer from the wafer.

摘要翻译： 公开了用于3-D制造的可释放掩埋层和制造方法。 该方法包括形成中间层结构，其包括在晶片上形成富含碳的电介质可剥离层。 该方法还包括在富含碳的电介质层上形成线（BEOL）层的后端，包括布线层和焊料凸块。 该方法还包括使用倒装芯片工艺将焊料凸块接合到衬底上。 倒装芯片工艺包括回流焊料凸块并快速冷却焊料凸块，从而将富碳介电层可释放层从晶片上释放出来。

公开(公告)号：US20140061933A1

公开(公告)日：2014-03-06

申请号：US13604878

申请日：2012-09-06

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

IPC分类号： H01L21/768 ,  H01L23/49

CPC分类号： H01L23/481 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/061 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A splash containment structure for semiconductor structures and associated methods of manufacture are provided. A method includes: forming wire bond pads in an integrated circuit chip and forming at least one passivation layer on the chip. The at least one passivation layer includes first areas having a first thickness and second areas having a second thickness. The second thickness is greater than the first thickness. The first areas having the first thickness extend over a majority of the chip. The second areas having the second thickness are adjacent the wire bond pads.

摘要翻译： 提供了一种用于半导体结构和相关制造方法的防溅结构。 一种方法包括：在集成电路芯片中形成引线接合焊盘并在芯片上形成至少一个钝化层。 至少一个钝化层包括具有第一厚度的第一区域和具有第二厚度的第二区域。 第二厚度大于第一厚度。 具有第一厚度的第一区域延伸超过芯片的大部分。 具有第二厚度的第二区域与引线接合焊盘相邻。

公开(公告)号：US20100065965A1

公开(公告)日：2010-03-18

申请号：US12624065

申请日：2009-11-23

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method comprises depositing a first metal containing layer into a trench structure, which contacts a metalized area of a semiconductor structure. The method further includes patterning at least one opening in a resist to the first metal containing layer. The opening should be in alignment with the trench structure. At least a pad metal containing layer is formed within the at least one opening (preferably by electroplating processes). The resist and the first metal layer underlying the resist are then etched (with the second metal layer acting as a mask, in embodiments). The method includes flowing solder material within the trench and on pad metal containing layer after the etching process. The structure is a controlled collapse chip connection (C4) structure comprising at least one electroplated metal layer formed in a resist pattern to form at least one ball limiting metallurgical layer. The structure further includes an underlying metal layer devoid of undercuts.

摘要翻译： 一种方法包括将第一含金属层沉积到与半导体结构的金属化区域接触的沟槽结构中。 该方法还包括将抗蚀剂中的至少一个开口图案化为第一含金属层。 开口应与沟槽结构对齐。 在至少一个开口内（优选通过电镀工艺）形成至少一垫层金属层。 然后蚀刻抗蚀剂和抗蚀剂下面的第一金属层（在实施例中第二金属层用作掩模）。 该方法包括在蚀刻工艺之后使沟槽内的焊料材料和含焊垫金属的层流动。 该结构是受控的崩溃芯片连接（C4）结构，包括至少一个以抗蚀剂图案形成的电镀金属层，以形成至少一个球限制冶金层。 该结构还包括没有底切的底层金属层。

公开(公告)号：US20100167522A1

公开(公告)日：2010-07-01

申请号：US12344802

申请日：2008-12-29

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothty D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothty D. SULLIVAN

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming a plurality of trenches in a dielectric layer extending to an underlying metal layer. The method further includes depositing metal in the plurality of trenches to form discrete metal line islands in contact with the underlying metal layer. The method also includes forming a solder bump in electrical connection to the plurality of metal line islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在延伸到下面的金属层的电介质层中形成多个沟槽。 该方法还包括在多个沟槽中沉积金属以形成与下面的金属层接触的离散金属线岛。 该方法还包括形成与多个金属线岛电连接的焊料凸块。