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公开(公告)号：US09324607B2
公开(公告)日：2016-04-26
申请号：US14815751
申请日：2015-07-31
申请人： AVOGY, INC.
IPC分类号： H01L21/768 , H01L21/283 , H01L23/528 , H01L29/20 , H01L23/532 , H01L29/417 , H01L29/66 , H01L29/78 , H01L21/285 , H01L23/495 , H01L23/482 , H01L23/00
CPC分类号： H01L21/7685 , H01L21/283 , H01L21/28575 , H01L21/76865 , H01L23/4827 , H01L23/49513 , H01L23/528 , H01L23/53204 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/92 , H01L29/2003 , H01L29/417 , H01L29/41741 , H01L29/66666 , H01L29/7827 , H01L2224/0345 , H01L2224/03462 , H01L2224/0347 , H01L2224/0361 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/0518 , H01L2224/05639 , H01L2224/05644 , H01L2224/06102 , H01L2224/06181 , H01L2224/2732 , H01L2224/27334 , H01L2224/291 , H01L2224/29116 , H01L2224/32245 , H01L2224/83192 , H01L2224/83815 , H01L2224/9221 , H01L2224/9222 , H01L2224/92242 , H01L2924/1033 , H01L2924/12032 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/00012 , H01L2224/03
摘要： A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.
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公开(公告)号：US20150102360A1
公开(公告)日：2015-04-16
申请号：US14577875
申请日：2014-12-19
申请人： Avogy, Inc.
IPC分类号： H01L29/20 , H01L29/417 , H01L29/49 , H01L29/45 , H01L29/47
CPC分类号： H01L29/2003 , H01L21/28575 , H01L21/28581 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/09 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L29/417 , H01L29/41741 , H01L29/452 , H01L29/475 , H01L29/4958 , H01L29/861 , H01L29/872 , H01L2224/0345 , H01L2224/03462 , H01L2224/0348 , H01L2224/03614 , H01L2224/03622 , H01L2224/03848 , H01L2224/04034 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/0518 , H01L2224/05184 , H01L2224/05187 , H01L2224/05541 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/06181 , H01L2224/09181 , H01L2224/2732 , H01L2224/27436 , H01L2224/291 , H01L2224/29116 , H01L2224/29144 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48769 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2224/83815 , H01L2224/9202 , H01L2224/9221 , H01L2224/92242 , H01L2224/92247 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01009 , H01L2224/03 , H01L2224/83 , H01L2224/85 , H01L2224/84 , H01L2924/04941 , H01L2224/37099 , H01L2224/37599 , H01L2924/206
摘要： An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal.
摘要翻译： 半导体器件的实施例包括具有第一表面和第二表面的氮化镓（GaN）衬底。 第二表面基本上与第一表面相对，至少一个器件层耦合到第一表面，并且背面金属耦合到第二表面。 顶部金属叠层耦合到至少一个器件层。 顶部金属堆叠包括耦合到至少一个器件层的表面的接触金属，耦合到接触金属的保护层，耦合到保护层的扩散阻挡层以及耦合到扩散阻挡层的焊盘金属。 半导体器件被配置为在顶部金属堆叠和背面金属之间导电。
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公开(公告)号：US20150340271A1
公开(公告)日：2015-11-26
申请号：US14815751
申请日：2015-07-31
申请人： AVOGY, INC.
IPC分类号： H01L21/768 , H01L23/532 , H01L29/78 , H01L29/20 , H01L29/417 , H01L29/66 , H01L21/283 , H01L23/528
CPC分类号： H01L21/7685 , H01L21/283 , H01L21/28575 , H01L21/76865 , H01L23/4827 , H01L23/49513 , H01L23/528 , H01L23/53204 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/92 , H01L29/2003 , H01L29/417 , H01L29/41741 , H01L29/66666 , H01L29/7827 , H01L2224/0345 , H01L2224/03462 , H01L2224/0347 , H01L2224/0361 , H01L2224/04026 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/0518 , H01L2224/05639 , H01L2224/05644 , H01L2224/06102 , H01L2224/06181 , H01L2224/2732 , H01L2224/27334 , H01L2224/291 , H01L2224/29116 , H01L2224/32245 , H01L2224/83192 , H01L2224/83815 , H01L2224/9221 , H01L2224/9222 , H01L2224/92242 , H01L2924/1033 , H01L2924/12032 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/0105 , H01L2924/01047 , H01L2924/00012 , H01L2224/03
摘要： A method for fabricating a vertical gallium nitride (GaN) power device can include providing a GaN substrate with a top surface and a bottom surface, forming a device layer coupled to the top surface of the GaN substrate, and forming a metal contact on a top surface of the vertical GaN power device. The method can further include forming a backside metal by forming an adhesion layer coupled to the bottom surface of the GaN substrate, forming a diffusion barrier coupled to the adhesion layer, and forming a protection layer coupled to the diffusion barrier. The vertical GaN power device can be configured to conduct electricity between the metal contact and the backside metal.
摘要翻译： 用于制造垂直氮化镓（GaN）功率器件的方法可以包括提供具有顶表面和底表面的GaN衬底，形成耦合到GaN衬底的顶表面的器件层，并在顶部形成金属接触 垂直GaN功率器件的表面。 该方法可以进一步包括通过形成耦合到GaN衬底的底表面的粘合层形成背面金属，形成耦合到粘附层的扩散阻挡层，以及形成与扩散阻挡层相连的保护层。 垂直GaN功率器件可以被配置为在金属触点和背面金属之间导电。
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