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    MOTFT AND ARRAY CIRCUIT FOR CHEMICAL/BIOCHEMICAL APPLICATIONS
    1.
    发明申请
    MOTFT AND ARRAY CIRCUIT FOR CHEMICAL/BIOCHEMICAL APPLICATIONS 审中-公开
    化学/生物化学应用的MOTFT和阵列电路

    公开(公告)号：US20160313282A1

    公开(公告)日：2016-10-27

    申请号：US15139134

    申请日：2016-04-26

    申请人： Chan-Long Shieh ,  Gang Yu ,  Donald E. Ackley

    发明人： Chan-Long Shieh ,  Gang Yu ,  Donald E. Ackley

    IPC分类号： G01N27/447 ,  H01L29/786 ,  H01L29/43

    CPC分类号： H01L29/7869 ,  G01N27/4148 ,  H01L27/1225 ,  H01L29/43

    摘要： Electro-chemical manipulation and charge sensing apparatus includes a chemical/biochemical testing pad positioned on a dielectric substrate, a sensing circuit coupled to the testing pad, the sensing circuit including at least one MOTFT device, and a manipulation and control circuit coupled to the testing pad, the manipulation and control circuit including at least one MOTFT device. The electro-chemical manipulation and charge sensing apparatus can include a plurality of chemical/biochemical testing pads distributed in a matrix formation of rows and columns and positioned on a dielectric substrate.

    摘要翻译： 电化学操作和电荷感测装置包括位于电介质基底上的化学/生化测试垫，耦合到测试垫的感测电路，感测电路包括至少一个MOTFT装置，以及耦合到测试的操纵和控制电路 所述操纵和控制电路包括至少一个MOTFT装置。 电化学操作和电荷感测装置可以包括分布在行和列的矩阵形式中并定位在电介质基底上的多个化学/生化测试垫。

    Method of making CMOS with organic and inorganic semiconducting region
    2.
    发明授权
    Method of making CMOS with organic and inorganic semiconducting region 失效
    用有机和无机半导体区域制造CMOS的方法

    公开(公告)号：US5612228A

    公开(公告)日：1997-03-18

    申请号：US634599

    申请日：1996-04-24

    申请人： Chan-Long Shieh ,  Donald E. Ackley

    发明人： Chan-Long Shieh ,  Donald E. Ackley

    IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/286 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0078

    摘要： A method of fabricating a thin film transistor device including forming first and second spaced apart control electrodes on a surface of a supporting substrate and forming a dielectric layer over the control electrodes. Inorganic and organic thin film transistors are formed on the dielectric layer, one on each control electrode. The inorganic and organic thin film transistors are n-type and p-type conductivity, respectively, and may be integrated into a complementary circuit. Also, the thin film transistor device is fabricated at relatively low temperatures so that plastic supporting substrates can be utilized.

    摘要翻译： 一种制造薄膜晶体管器件的方法，包括在支撑衬底的表面上形成第一和第二间隔开的控制电极，并在控制电极上形成电介质层。 无机和有机薄膜晶体管形成在每个控制电极上的电介质层上。 无机和有机薄膜晶体管分别是n型和p型导电性，并且可以集成到互补电路中。 此外，薄膜晶体管器件在相对低的温度下制造，从而可以利用塑料支撑衬底。

    Top emitting VCSEL with etch stop layer
    3.
    发明授权
    Top emitting VCSEL with etch stop layer 失效
    顶部发射具有蚀刻停止层的VCSEL

    公开(公告)号：US5293392A

    公开(公告)日：1994-03-08

    申请号：US922719

    申请日：1992-07-31

    申请人： Chan-Long Shieh ,  Donald E. Ackley

    发明人： Chan-Long Shieh ,  Donald E. Ackley

    IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S3/19

    CPC分类号： H01S5/18344 ,  H01S5/18308 ,  H01S5/2059 ,  H01S5/209

    摘要： A top emitting vertical cavity surface emitting laser with an etch stop layer positioned in the top mirror stack so the stack can be etched to form a trench surrounding a mesa with the emitting area on the mesa and the trench confining current flow and lasing to the mesa.

    摘要翻译： 顶部发射垂直腔表面发射激光器，其具有定位在顶部反射镜堆叠中的蚀刻停止层，使得可以蚀刻该堆叠以形成围绕台面的台面的沟槽，并且沟槽限制电流和激光到台面 。

    Patterened mirror vertical cavity surface emitting laser
    4.
    发明授权
    Patterened mirror vertical cavity surface emitting laser 失效
    Patterened镜面垂直腔表面发射激光

    公开(公告)号：US5258316A

    公开(公告)日：1993-11-02

    申请号：US858288

    申请日：1992-03-26

    申请人： Donald E. Ackley ,  Chan-Long Shieh

    发明人： Donald E. Ackley ,  Chan-Long Shieh

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H01L21/20

    CPC分类号： H01S5/18327 ,  H01S2301/166 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/2063

    摘要： VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and an oxygen implant in the trench confines current distribution to maximize power output and efficiency. The trench allows self-alignment throughout most of the manufacturing process.

    摘要翻译： VCSEL包括具有上反射镜和下反射镜叠层的中心活性层，其中在一个反射镜叠层中形成圆形沟槽以限定激光区域。 沟槽减少反射率以防止激光在工作区域外，并且沟槽中的氧注入限制电流分布以最大化功率输出和效率。 沟槽允许在大部分制造过程中自对准。

    Magnetoresistance-based method and apparatus for molecular detection
    5.
    发明授权
    Magnetoresistance-based method and apparatus for molecular detection 失效
    用于分子检测的基于磁阻的方法和装置

    公开(公告)号：US6057167A

    公开(公告)日：2000-05-02

    申请号：US656647

    申请日：1996-05-31

    申请人： Chan-Long Shieh ,  Donald E. Ackley

    发明人： Chan-Long Shieh ,  Donald E. Ackley

    IPC分类号： C12Q1/68 ,  G01N33/543 ,  G01R33/09 ,  G01N33/553

    CPC分类号： G01R33/09 ,  G01N27/745 ,  G01N33/54373 ,  Y10S436/806

    摘要： A binding of a molecule with a molecular receptor at a binding site is sensed using a magnetoresistive member proximate to the binding site. A magnetic field associated with the molecule acts to modify an electrical characteristic of the magnetoresistive member when the molecule binds with the molecular receptor. The magnetic field is produced by a magnetic member, such as a magnetic bead, attached to the molecule. Preferably, the magnetoresistive member is integrated with a substrate which supports the binding site. A readout device, such as a thin-film transistor, can also be integrated on the substrate to provide a signal indicative of a binding event.

    摘要翻译： 使用接近结合位点的磁阻构件来感测分子与结合位点处的分子受体的结合。 当分子与分子受体结合时，与分子相关的磁场用于改变磁阻成分的电特性。 磁场由附着在分子上的诸如磁珠的磁性部件产生。 优选地，磁阻元件与支撑结合位点的基底一体化。 诸如薄膜晶体管的读出装置也可以集成在衬底上，以提供表示绑定事件的信号。

    Transistor-based apparatus and method for molecular detection and field enhancement
    6.
    发明授权
    Transistor-based apparatus and method for molecular detection and field enhancement 失效
    基于晶体管的装置和分子检测和场增强方法

    公开(公告)号：US5827482A

    公开(公告)日：1998-10-27

    申请号：US699757

    申请日：1996-08-20

    申请人： Chan-Long Shieh ,  Donald E. Ackley

    发明人： Chan-Long Shieh ,  Donald E. Ackley

    IPC分类号： C12N15/09 ,  C12Q1/68 ,  G01N27/00 ,  G01N27/327 ,  G01N27/414 ,  G01N33/543 ,  G01N27/02 ,  G01N27/26 ,  G01N33/53

    CPC分类号： C12Q1/6825 ,  G01N27/4145 ,  G01N33/54373

    摘要： Binding of a molecule to a molecular receptor is sensed using a transistor having a gate located at a binding site. The channel conductance of the transistor is modified by a charge associated with the molecule when the molecule binds with the molecular receptor. A modified electrical characteristic of the transistor which results is sensed to sense the binding event. Electric field enhancement is provided by applying a voltage to the gate. A second sensing transistor can be coupled to the sensing transistor to form a differential pair. The differential pair allows for enhancing and sensing of differential binding events.

    摘要翻译： 使用具有位于结合位点的栅极的晶体管来感测分子与分子受体的结合。 当分子与分子受体结合时，通过与分子相关的电荷来修饰晶体管的沟道电导。 检测结果感测结合事件的晶体管的改进的电特性。 通过向栅极施加电压来提供电场增强。 第二感测晶体管可以耦合到感测晶体管以形成差分对。 差分对允许增强和感测差分绑定事件。

    VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
    8.
    发明授权
    VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication 失效
    具有垂直偏移操作区域的VCSEL提供横向波导和电流限制以及制造方法

    公开(公告)号：US5351257A

    公开(公告)日：1994-09-27

    申请号：US28015

    申请日：1993-03-08

    申请人： Michael S. Lebby ,  Chan-Long Shieh ,  Donald E. Ackley

    发明人： Michael S. Lebby ,  Chan-Long Shieh ,  Donald E. Ackley

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S3/05 ,  H01S3/19

    CPC分类号： H01S5/18327 ,  H01S2301/176 ,  H01S5/0207 ,  H01S5/0422

    摘要： A VCSEL including a first mirror stack, an active region and a second mirror stack positioned on a substrate with portions of the active region and the first and second mirror stacks being offset from surrounding portions by an offset area in the surface of the substrate so as to define a lateral waveguide which confines the operating region of the VCSEL. The surrounding portions of the second mirror stack are removed to provide current control and refractory metal contacts are formed on the upper and lower surfaces. Methods of fabricating the offset as a depression or a mesa in the surface of the substrate and the resulting VCSEL are disclosed.

    摘要翻译： 包括位于衬底上的第一反射镜堆叠，有源区域和第二反射镜堆叠的VCSEL，其中有源区域和第一和第二反射镜叠层的部分通过衬底的表面中的偏移区域从周围部分偏移，从而 以限定限制VCSEL的操作区域的横向波导。 移除第二反射镜叠层的周围部分以提供电流控制，并且在上表面和下表面上形成耐火金属触点。 公开了将偏移制造为衬底表面中的凹陷或台面的方法和所得到的VCSEL。