OPTICAL DIE STRUCTURES AND ASSOCIATED PACKAGE SUBSTRATES
    8.
    发明申请
    OPTICAL DIE STRUCTURES AND ASSOCIATED PACKAGE SUBSTRATES 有权
    光学结构和相关封装基板

    公开(公告)号:US20090238233A1

    公开(公告)日:2009-09-24

    申请号:US12052650

    申请日:2008-03-20

    摘要: Optical die structures and associated package substrates are generally described. In one example, an electronic device includes a package substrate having a package substrate core, a dielectric layer coupled with the package substrate core, and one or more input/output (I/O) optical fibers coupled with the package substrate core or coupled with the build-up dielectric layer, or combinations thereof, the one or more I/O optical fibers to guide I/O optical signals to and from the package substrate wherein the one or more I/O optical fibers allow both input and output optical signals to travel through the one or more I/O optical fibers.

    摘要翻译: 通常描述光学晶粒结构和相关的封装衬底。 在一个示例中,电子设备包括封装衬底,其具有封装衬底芯,与封装衬底芯耦合的电介质层,以及与封装衬底芯耦合的一个或多个输入/输出(I / O)光纤或与 所述积聚介质层或其组合,所述一个或多个I / O光纤以将I / O光信号引导到所述封装基板,其中所述一个或多个I / O光纤允许输入和输出光信号 穿过一个或多个I / O光纤。

    INTEGRATED CIRCUIT AND PROCESS FOR FABRICATING THEREOF
    10.
    发明申请
    INTEGRATED CIRCUIT AND PROCESS FOR FABRICATING THEREOF 有权
    集成电路及其制造方法

    公开(公告)号:US20090108455A1

    公开(公告)日:2009-04-30

    申请号:US11923194

    申请日:2007-10-24

    IPC分类号: H01L23/52 H01L21/44

    摘要: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

    摘要翻译: 公开了一种用于制造集成电路(IC)的工艺和由此形成的IC。 该方法包括提供基底。 该方法还包括在衬底中形成多个纵向沟槽,并在多个纵向沟槽的至少一个纵向沟槽上沉积第一导电材料层。 第一导电材料层的第一层沉积在第一导电材料的层上。 此后,该方法包括在第二导电材料的第一层上沉积第二导电材料层。 第二导电材料的第二层至少部分地填充至少一个纵向沟槽。 选择第一导电材料使得第一导电材料的还原电位小于第二导电材料的还原电位。