-
公开(公告)号：US08389397B2
公开(公告)日：2013-03-05
申请号：US12881495
申请日：2010-09-14
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号： H01L21/44
CPC分类号： H01L21/67028 , H01L23/3114 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/1308 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： A method of forming a device includes providing a wafer including a substrate; and forming an under-bump metallurgy (UBM) layer including a barrier layer overlying the substrate and a seed layer overlying the barrier layer. A metal bump is formed directly over a first portion of the UBM layer, wherein a second portion of the UBM layer is not covered by the metal bump. The second portion of the UBM layer includes a seed layer portion and a barrier layer portion. A first etch is performed to remove the seed layer portion, followed by a first rinse step performed on the wafer. A second etch is performed to remove the barrier layer portion, followed by a second rinse step performed on the wafer. At least a first switch time from the first etch to the first rinse step and a second switch time from the second etch to the second rinse step is less than about 1 second.
摘要翻译： 一种形成器件的方法包括提供包括衬底的晶片; 以及形成包括覆盖在衬底上的阻挡层和覆盖在阻挡层上的种子层的凸起下金属（UBM）层。 直接在UBM层的第一部分上形成金属凸块，其中UBM层的第二部分不被金属凸块覆盖。 UBM层的第二部分包括种子层部分和阻挡层部分。 进行第一蚀刻以除去种子层部分，接着在晶片上执行第一漂洗步骤。 执行第二蚀刻以去除阻挡层部分，接着在晶片上执行第二冲洗步骤。 从第一蚀刻到第一漂洗步骤的至少第一切换时间和从第二蚀刻到第二冲洗步骤的第二切换时间小于约1秒。
-
公开(公告)号：US08501613B2
公开(公告)日：2013-08-06
申请号：US13178276
申请日：2011-07-07
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。
-
公开(公告)号：US20130012014A1
公开(公告)日：2013-01-10
申请号：US13178276
申请日：2011-07-07
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
IPC分类号： H01L21/28
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。
-
公开(公告)号：US08748306B2
公开(公告)日：2014-06-10
申请号：US13198767
申请日：2011-08-05
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
CPC分类号： H01L24/11 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/05 , H01L24/13 , H01L2224/0239 , H01L2224/0401 , H01L2224/05024 , H01L2224/05569 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05687 , H01L2224/11334 , H01L2224/11849 , H01L2224/119 , H01L2224/1191 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/181 , H01L2924/01029 , H01L2924/01013 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2224/1181 , H01L2924/04953 , H01L2924/04941 , H01L2924/00 , H01L2224/05552
摘要： A method of forming wafer-level chip scale packaging solder bumps on a wafer substrate involves cleaning the surface of the solder bumps using a laser to remove any residual molding compound from the surface of the solder bumps after the solder bumps are reflowed and a liquid molding compound is applied and cured.
摘要翻译： 在晶片衬底上形成晶片级芯片级封装焊料凸块的方法包括使用激光清洗焊料凸块的表面，以在焊料凸点回流之后从焊料凸块的表面去除残留的模塑料，并且液态模塑 化合物被施用和固化。
-
公开(公告)号：US20120064712A1
公开(公告)日：2012-03-15
申请号：US12881495
申请日：2010-09-14
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号： H01L21/768
CPC分类号： H01L21/67028 , H01L23/3114 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/1308 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： A method of forming a device includes providing a wafer including a substrate; and forming an under-bump metallurgy (UBM) layer including a barrier layer overlying the substrate and a seed layer overlying the barrier layer. A metal bump is formed directly over a first portion of the UBM layer, wherein a second portion of the UBM layer is not covered by the metal bump. The second portion of the UBM layer includes a seed layer portion and a barrier layer portion. A first etch is performed to remove the seed layer portion, followed by a first rinse step performed on the wafer. A second etch is performed to remove the barrier layer portion, followed by a second rinse step performed on the wafer. At least a first switch time from the first etch to the first rinse step and a second switch time from the second etch to the second rinse step is less than about 1 second.
摘要翻译： 一种形成器件的方法包括提供包括衬底的晶片; 以及形成包括覆盖在衬底上的阻挡层和覆盖在阻挡层上的种子层的凸起下金属（UBM）层。 直接在UBM层的第一部分上形成金属凸块，其中UBM层的第二部分不被金属凸块覆盖。 UBM层的第二部分包括种子层部分和阻挡层部分。 进行第一蚀刻以除去种子层部分，接着在晶片上执行第一漂洗步骤。 执行第二蚀刻以去除阻挡层部分，接着在晶片上执行第二冲洗步骤。 从第一蚀刻到第一漂洗步骤的至少第一切换时间和从第二蚀刻到第二冲洗步骤的第二切换时间小于约1秒。
-
公开(公告)号：US10128206B2
公开(公告)日：2018-11-13
申请号：US12904506
申请日：2010-10-14
申请人： Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Meng-Wei Chou , Hung-Jui Kuo , Chung-Shi Liu
发明人： Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Meng-Wei Chou , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号： H01L21/768 , H01L23/48 , H01L23/00
摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.
-
公开(公告)号：US08647796B2
公开(公告)日：2014-02-11
申请号：US13192113
申请日：2011-07-27
申请人： Chen-Hua Yu , Chung-Shi Liu , Hung-Jui Kuo
发明人： Chen-Hua Yu , Chung-Shi Liu , Hung-Jui Kuo
IPC分类号： G03F7/00
CPC分类号： H01L23/5226 , G03F7/0045 , G03F7/095 , H01L21/311 , H01L21/76804 , H01L24/24 , H01L24/82 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/16145 , H01L2224/24146 , H01L2224/73259 , H01L2224/8203 , H01L2224/82101 , H01L2224/82106 , H01L2224/94 , H01L2225/06524 , H01L2924/10253 , H01L2924/1431 , H01L2924/1434 , H01L2224/82 , H01L2224/81
摘要： A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.
摘要翻译： 提供了一种用于在半导体衬底上形成光致抗蚀剂的系统和方法。 一个实施方案包括具有浓度梯度的光致抗蚀剂。 浓度梯度可以通过使用一系列干膜光致抗蚀剂形成，其中每个单独的干膜光致抗蚀剂具有不同的浓度。 单独的干膜光致抗蚀剂可以单独形成，然后在图案化之前放置在半导体衬底上。 一旦被图案化，通过光致抗蚀剂的开口可以具有锥形侧壁，允许更好地覆盖种子层，以及更均匀的工艺以通过光致抗蚀剂形成导电材料。
-
公开(公告)号：US09765289B2
公开(公告)日：2017-09-19
申请号：US13598272
申请日：2012-08-29
申请人： Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
发明人： Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号： C11D11/0047 , C11D7/06 , C11D7/3218 , H01L21/02071 , H01L21/67051 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/13005 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2924/00014 , H01L2924/01079 , H01L2924/01082 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
摘要： Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.
-
公开(公告)号：US20130276837A1
公开(公告)日：2013-10-24
申请号：US13598272
申请日：2012-08-29
申请人： Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
发明人： Hui-Jung Tsai , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号： C11D11/0047 , C11D7/06 , C11D7/3218 , H01L21/02071 , H01L21/67051 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/13005 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13169 , H01L2224/13171 , H01L2224/13172 , H01L2224/13184 , H01L2924/00014 , H01L2924/01079 , H01L2924/01082 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
摘要： Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.
摘要翻译： 公开了在半导体器件封装过程中用于清洁金属触点上残留物的方法和化学溶剂。 用于清洁在金属接触物上形成的残余物的化学溶剂可以包含反应性无机组分和反应性有机组分。 该方法可以包括在第一压力下喷射具有化学溶剂的半导体器件，以及在低于第一压力的第二压力下用化学溶剂喷射半导体器件。
-
公开(公告)号：US20130127059A1
公开(公告)日：2013-05-23
申请号：US13299100
申请日：2011-11-17
申请人： Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
发明人： Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号： G06F17/5077 , G06F17/5072 , H01L23/488 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05552 , H01L2224/05572 , H01L2224/05666 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14132 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
摘要： A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
-
-
-
-
-
-
-
-
-
搜索结果
292 条记录 (耗时 0.036 秒)
