公开(公告)号：US20170317247A1

公开(公告)日：2017-11-02

申请号：US15646099

申请日：2017-07-11

申请人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

发明人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

IPC分类号： H01L33/50 ,  H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L23/498 ,  H01L33/36 ,  H01L33/48

CPC分类号： H01L33/507 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06151 ,  H01L2224/11462 ,  H01L2224/16013 ,  H01L2224/16057 ,  H01L2224/16151 ,  H01L2224/27462 ,  H01L2224/32238 ,  H01L2224/325 ,  H01L2224/33151 ,  H01L2224/81893 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83893 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

公开(公告)号：US20180342653A1

公开(公告)日：2018-11-29

申请号：US16034963

申请日：2018-07-13

申请人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

发明人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

IPC分类号： H01L33/50 ,  H01L33/36 ,  H01L33/44 ,  H01L23/00 ,  H01L33/00 ,  H01L23/498 ,  H01L33/48

摘要： A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

公开(公告)号：US20090065762A1

公开(公告)日：2009-03-12

申请号：US12178758

申请日：2008-07-24

申请人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

发明人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

IPC分类号： H01L29/06

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/16

摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.

摘要翻译： 用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。 半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。 非极性有源区层包括阱层和具有超晶格结构的势垒层。

公开(公告)号：US20150270454A1

公开(公告)日：2015-09-24

申请号：US14731046

申请日：2015-06-04

申请人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

发明人： Chung Hoon LEE ,  Dae Sung KAL ,  Ki Bum NAM

IPC分类号： H01L33/50 ,  H01L33/44 ,  H01L33/36

CPC分类号： H01L33/507 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05571 ,  H01L2224/06151 ,  H01L2224/11462 ,  H01L2224/16013 ,  H01L2224/16057 ,  H01L2224/16151 ,  H01L2224/27462 ,  H01L2224/32238 ,  H01L2224/325 ,  H01L2224/33151 ,  H01L2224/81893 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83893 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00

摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

摘要翻译： 一种半导体器件，包括第一引线电极和第二引线电极; 半导体堆叠结构，其设置在所述构件上，所述半导体堆叠结构包括第一导电半导体层，第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源区; 电连接到第一导电半导体层的第一电极; 电连接到第二导电半导体层的第二电极; 电镀层，其被配置为将所述半导体堆叠结构结合到所述构件; 以及覆盖半导体堆叠结构的至少侧表面的第一波长转换器。

公开(公告)号：US20120153259A1

公开(公告)日：2012-06-21

申请号：US13406313

申请日：2012-02-27

申请人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

发明人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

IPC分类号： H01L33/06

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/16

摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.

摘要翻译： 用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。 半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。 非极性有源区层包括阱层和具有超晶格结构的势垒层。

公开(公告)号：US20120074441A1

公开(公告)日：2012-03-29

申请号：US13194317

申请日：2011-07-29

申请人： Won Cheol SEO ,  Dae Sung KAL

发明人： Won Cheol SEO ,  Dae Sung KAL

IPC分类号： H01L33/50 ,  H01L27/15 ,  H01L33/38 ,  H01L33/58

CPC分类号： H01L33/56 ,  H01L27/15 ,  H01L27/153 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

摘要翻译： 本发明的示例性实施例提供一种晶片级发光二极管（LED）封装及其制造方法。 LED封装包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的半导体堆叠; 布置在所述第二导电类型半导体层和所述有源层中的多个接触孔，所述接触孔暴露所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第一凸块，所述第一凸块经由所述多个接触孔电连接到所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第二凸块，所述第二凸块电连接到所述第二导电型半导体层; 以及覆盖半导体叠层的侧壁的保护绝缘层。

公开(公告)号：US20120139444A1

公开(公告)日：2012-06-07

申请号：US13151943

申请日：2011-06-02

申请人： Dae Won KIM ,  Do Hyung KIM ,  Dae Sung KAL ,  In Kyu PARK

发明人： Dae Won KIM ,  Do Hyung KIM ,  Dae Sung KAL ,  In Kyu PARK

IPC分类号： H05B37/02 ,  H01L27/15

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/48137 ,  H01L2224/49107

摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.

摘要翻译： 所公开的发光器件包括至少一个第一发光元件，其包括至少一个用于发射波长为400至500nm的光的发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

公开(公告)号：US20110062459A1

公开(公告)日：2011-03-17

申请号：US12882406

申请日：2010-09-15

申请人： Dae Sung KAL ,  Won Cheol SEO ,  Jang Woo LEE ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  Sang Ki JIN ,  So Ra LEE

发明人： Dae Sung KAL ,  Won Cheol SEO ,  Jang Woo LEE ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  Sang Ki JIN ,  So Ra LEE

IPC分类号： H01L33/08

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.

摘要翻译： 本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元 每个具有阳极端子和阴极端子的发光单元。 在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。 由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

公开(公告)号：US20120032223A1

公开(公告)日：2012-02-09

申请号：US13277706

申请日：2011-10-20

申请人： Jeong Suk BAE ,  Jae Jo KIM ,  Do Hyung KIM ,  Dae Sung KAL

发明人： Jeong Suk BAE ,  Jae Jo KIM ,  Do Hyung KIM ,  Dae Sung KAL

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L33/56 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.

摘要翻译： 公开了一种用于发射紫外光的紫外线发光二极管封装。 紫外线发光二极管封装包括发射峰值波长为350nm以下的光的LED芯片，以及设置为使得LED芯片的周围被覆盖以保护LED芯片的保护构件，保护构件具有不变黄 性能来自LED芯片的能量。

公开(公告)号：US20110163346A1

公开(公告)日：2011-07-07

申请号：US12974917

申请日：2010-12-21

申请人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

发明人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC分类号： H01L33/42 ,  H01L33/36

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。