摘要:
A substrate module having an embedded phase-locked loop is cooperated with at least one function unit mounted thereon for forming an integrated system. The substrate module includes a base, a multi-layer structure, a built-in circuit unit, and an external circuit unit. The built-in circuit unit is integrated inside the multi-layer structure and the multi-layer structure is formed in the base. The external circuit unit is mounted on the upper surface of the base and is electrically coupled to the built-in circuit unit for jointly forming a phase-locked loop, so as to cooperate with the function unit.
摘要:
A substrate module having an embedded phase-locked loop is cooperated with at least one function unit mounted thereon for forming an integrated system. The substrate module includes a base, a multi-layer structure, a built-in circuit unit, and an external circuit unit. The built-in circuit unit is integrated inside the multi-layer structure and the multi-layer structure is formed in the base. The external circuit unit is mounted on the upper surface of the base and is electrically coupled to the built-in circuit unit for jointly forming a phase-locked loop, so as to cooperate with the function unit.
摘要:
The invention provides a surface mount technology process for an advanced quad flat no-lead package process and a stencil used therewith. The surface mount technology process for an advanced quad flat no-lead package includes providing a printed circuit board. A stencil with first openings is mounted over the printed circuit board. A solder paste is printed passing the first openings to form first solder paste patterns. The stencil is taken off. A component placement process is performed to place the advanced quad flat no-lead package comprising a die pad on the printed circuit board, wherein the first solder paste patterns contact a lower surface of the die pad, and an area ratio of the first openings to the lower surface of the die pad is between 1:2 and 1:10. A reflow process is performed to melt the first solder paste patterns to surround a sidewall of the die pad.
摘要:
A package-on-package includes a package carrier; a semiconductor die assembled face-down to a chip side of the package carrier; a rewiring laminate structure between the semiconductor die and the package carrier; a plurality of bumps arranged on the rewiring laminate structure for electrically connecting the semiconductor die with the package carrier; and an IC package mounted on the package carrier. The IC package and the semiconductor die are at least partially overlapped.
摘要:
A semiconductor package includes a die pad; a semiconductor die mounted on the die pad; a plurality of leads disposed along peripheral edges of the die pad; a ground bar between the leads and the die pad; and a plurality of bridges connecting the ground bar with the die pad, wherein a gap between two adjacent bridges has a length that is equal to or less than 3 mm.
摘要:
A system-in-package includes a package carrier; a first semiconductor die having a die face and a die edge, the first semiconductor die being assembled face-down to a chip side of the package carrier; a second semiconductor die mounted alongside of the first semiconductor die; a rewiring laminate structure comprising a re-routed metal layer between the first semiconductor die and the package carrier. At least a portion of the re-routed metal layer projects beyond the die edge. A plurality of bumps are arranged on the rewiring laminate structure for electrically connecting the first semiconductor die with the package carrier.
摘要:
A QFN semiconductor package includes a die attach pad; a semiconductor die mounted on the die attach pad; an inner terminal lead disposed adjacent to the die attach pad; a first wire bonding the inner terminal lead to the semiconductor die; an extended, outer terminal lead disposed along periphery of the QFN semiconductor package, wherein the extended, outer terminal lead is disposed beyond a maximum wire length which is provided for a specific minimum pad opening size on the semiconductor die; an intermediary terminal disposed between the inner terminal lead and the extended, outer terminal lead; a second wire bonding the intermediary terminal to the semiconductor die; and a third wire bonding the intermediary terminal to the extended, outer terminal lead.
摘要:
A wire bond chip package includes a chip carrier; a semiconductor die having a die face and a die edge, the semiconductor die being mounted on a die attach surface of the chip carrier, wherein a plurality of input/output (I/O) pads are situated in or on the semiconductor die; a rewiring laminate structure on the semiconductor die, the rewiring laminate structure comprising a plurality of redistribution bond pads; a plurality of bond wires interconnecting the redistribution bond pads with the chip carrier; and a mold cap encapsulating at least the semiconductor die and the bond wires.
摘要:
An electronic package is provided. The electronic package comprises a die pad having a die attached thereon. A plurality of leads surrounds the die pad and spaced therefrom to define a ring gap therebetween. At least one first common electrode bar is in the ring gap and substantially coplanar to the die pad, in which at least one of the plurality of leads extends to the first common electrode bar. A molding compound partially encapsulates the die pad and the first common electrode bar, such that the bottom surfaces of the die pad and the first common electrode bar are exposed. A length of the first common electrode bar is substantially equal to a predetermined distance between two pads among a plurality of power or ground pads on a side of the die facing the first common electrode bar. An electronic device with the electronic package is also disclosed.
摘要:
A semiconductor package includes a die pad; a semiconductor die mounted on the die pad; a plurality of leads disposed along peripheral edges of the die pad; a ground bar between the leads and the die pad; and a plurality of bridges connecting the ground bar with the die pad, wherein a gap between two adjacent bridges has a length that is equal to or less than 3 mm.