公开(公告)号：US09401298B2

公开(公告)日：2016-07-26

申请号：US11910771

申请日：2006-04-10

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/6835 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6836 ,  H01L24/31 ,  H01L24/75 ,  H01L24/83 ,  H01L24/86 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/16 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/75 ,  H01L2224/75263 ,  H01L2224/75314 ,  H01L2224/7565 ,  H01L2224/7965 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19043 ,  H01L2924/00014

Abstract: A method and device for transferring a chip (18) situated on a transfer substrate (26) to a contact substrate (50), and for contacting the chip with the contact substrate, in which the chip, the back side (19) of which is attached adhesively to a support surface of the transfer substrate facing the contact substrate, is charged with laser energy from behind through the transfer substrate, and the chip contacts (59, 60) thereof that are arranged opposite a contact surface (58) of the contact substrate are brought into contact with substrate contacts (56, 57) arranged on the contact surface by means of a pressing device (45, 46) from behind through the transfer substrate, and a thermal bond is created between the chip contacts and the substrate contacts.

Abstract translation: 一种用于将位于转印衬底（26）上的芯片（18）转移到接触衬底（50）并将芯片与接触衬底接触的方法和装置，其中芯片的背面（19） 被粘附到转移基板的面向接触基板的支撑表面上，从后面通过转印基板充满激光能量，并且其与芯片接触（59,60）相对地设置在与基板的接触表面（58）相对的位置 接触基板通过从后面通过转印基板的加压装置（45,46）与布置在接触表面上的基板触点（56,57）接触，并且在芯片触头和基板之间产生热粘合 联系人

公开(公告)号：US08497578B2

公开(公告)日：2013-07-30

申请号：US12991581

申请日：2009-03-10

Applicant: Elke Zakel ,  Thorsten Teutsch

Inventor： Elke Zakel ,  Thorsten Teutsch

IPC: H01L23/48

CPC classification number: H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11902 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: The invention relates to a contact structure (24) and to a method for producing a contact structure for semiconductor substrates (21) or the like, in particular for terminal faces of semiconductor substrates, comprising a base contact part (22) arranged on a terminal face (20) of the semiconductor substrate and at least one connecting contact part (23) arranged on the base contact part, wherein the connecting contact part is formed from a connecting contact material (34) which has a lower melting point than a base contact material of the base contact part.

Abstract translation: 本发明涉及一种接触结构（24）以及一种用于制造用于半导体衬底（21）等的接触结构的方法，特别是涉及用于半导体衬底的端子面的接触结构（24），该接触结构包括设置在端子 所述半导体衬底的表面（20）和布置在所述基底接触部分上的至少一个连接接触部分（23），其中所述连接接触部分由熔点低于基底接触点的连接接触材料（34）形成 基部接触部件的材料。

公开(公告)号：US07932611B2

公开(公告)日：2011-04-26

申请号：US10581819

申请日：2004-12-02

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: H01L23/48

CPC classification number: H01L23/10 ,  B23K26/57 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/40 ,  H01L21/50 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2924/01079

Abstract: A method and device for alternately contacting two wafer-like component composite arrangements, in which the two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metallizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement , so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.

Abstract translation: 用于交替接触两个晶片状部件复合布置的方法和装置，其中在其相对的接触表面上设置有接触金属化的双组分复合布置通过它们的接触金属化进入覆盖位置以形成接触对，其中 定位要接合在一起的接触金属化彼此压靠，接触金属化通过将组件复合结构中的一个的后部暴露于激光辐射而接触，激光辐射的波长被选择为吸收程度的函数 的组件复合布置，使得激光辐射通过暴露于后面的激光辐射的组件复合结构的传输基本上被抑制或激光辐射的吸收基本上在一个或两个组件复合材料的接触金属化中发生 安排

公开(公告)号：US07007834B2

公开(公告)日：2006-03-07

申请号：US10451319

申请日：2001-12-19

Applicant: Elke Zakel

Inventor： Elke Zakel

IPC: B23K31/02

CPC classification number: H01L24/12 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/351 ,  H01L2924/00

Abstract: Contact bump construction (27) and method for the production of a contact bump construction for the formation of elevated contact sites on connecting surfaces (22) of a substrate (21), particularly chip connecting surfaces, with a spacer metallization (28) for the attainment of a defined height of the contact bump construction, wherein the spacer metallization (28) consists at least partly of annealed copper.

Abstract translation: 接触凸块结构（27）以及用于制造接触凸块结构的方法，用于在衬底（21）的连接表面（22），特别是芯片连接表面上形成升高的接触位置，其中间隔金属化（28）用于 获得接触凸块结构的限定高度，其中间隔金属化（28）至少部分地由退火铜构成。

公开(公告)号：US06955943B2

公开(公告)日：2005-10-18

申请号：US10362862

申请日：2002-06-26

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  H01L21/44

CPC classification number: H05K3/3436 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K3/3478 ,  H05K3/3494 ,  H05K2201/0379 ,  H05K2201/10977 ,  H05K2203/041 ,  H05K2203/043 ,  H05K2203/107 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method is provided for producing a substrate arrangement. The process includes the preparation of a substrate and bringing connecting surfaces of the substrate into contact with inner contacts of a wiring layer, the application of contact material to outer contacts of the wiring layer defining an outer connecting surface arrangement to form base contact bumps (31) and the application of joining material to the base contact bumps to form contact bump tops joined to the base contact bumps, wherein the joining material is applied as joining material moldings (35) and the contact bump tops are formed by at least partial melting of the joining material moldings by the action of laser energy.

Abstract translation: 提供了一种用于制造衬底布置的方法。 该方法包括制备衬底并使衬底的连接表面与布线层的内部触点接触，将接触材料施加到限定外部连接表面布置的布线层的外部触点，以形成基部接触凸块（31 ）和将接合材料施加到基部接触凸起以形成接合到基部接触凸点的接触凸起顶部，其中接合材料作为接合材料模制件（35）施加，并且接触凸起顶部通过至少部分熔化形成 通过激光能量的作用使接合材料成型。

公开(公告)号：US20050031776A1

公开(公告)日：2005-02-10

申请号：US10398785

申请日：2001-10-02

Applicant: Elke Zakel ,  Paul Kasulke ,  Oliver Uebel ,  Lars Titerle

Inventor： Elke Zakel ,  Paul Kasulke ,  Oliver Uebel ,  Lars Titerle

IPC: B23K3/06 ,  H05K3/34 ,  B05D5/00 ,  B05D5/12

CPC classification number: B23K3/0607 ,  H05K3/3478

Abstract: In order to apply solder material (20) to a workpiece (1), compressed gas is guided through a bore hole (5) of a capillary (3). A pressure sensor (13) situated in the bore hole (5) measures the dynamic pressure of the compressed gas. As soon as the tip (12) of the capillary approaches the workpiece (1), the dynamic pressure increases and is used as a measure for the distance between the tip (12) of the capillary (3) and the workpiece (1), enabling the feed motion of the capillary to be controlled.

Abstract translation: 为了将焊料（20）施加到工件（1）上，压缩气体被引导通过毛细管（3）的钻孔（5）。 位于钻孔（5）中的压力传感器（13）测量压缩气体的动态压力。 一旦毛细管的尖端（12）接近工件（1），则动态压力增加并且用作毛细管（3）的尖端（12）与工件（1）之间的距离的量度， 使得能够控制毛细管的进料运动。

公开(公告)号：US06407457B1

公开(公告)日：2002-06-18

申请号：US09704131

申请日：2000-11-01

Applicant: Rolf Aschenbrenner ,  Elke Zakel ,  Hans-Hermann Oppermann ,  Ghassem Azdasht

Inventor： Rolf Aschenbrenner ,  Elke Zakel ,  Hans-Hermann Oppermann ,  Ghassem Azdasht

IPC: H01L2348

CPC classification number: H01L21/563 ,  H01L24/29 ,  H01L2224/73203 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00

Abstract: An electronic contacting method for contacting a chip having a plurality of conductive contact areas, which are not provided with an additional metallization layer, a carrier substrate is provided, which has a first surface having arranged thereon a plurality of conductive connecting sections. A non-conductive adhesive layer is arranged on the first surface of the carrier substrate and subsequently, the carrier substrate is aligned with a chip to be contacted in such away that a plurality of conductive contact areas on said chip to be contacted is in alignment with the connecting sections on the first surface of said carrier substrate. Then the carrier substrate is connected to the chip to be contacted by means of the adhesive layer in such a way that the connecting sections of the carrier substrate and the contact areas of the chip abut on one another by means of pressure contact, without any intermetallic connection being established.

Abstract translation: 提供一种电子接触方法，用于接触具有多个不具有附加金属化层的导电接触区域的芯片，载体基板，其具有布置有多个导电连接部分的第一表面。 在载体基板的第一表面上布置非导电粘合剂层，随后将载体基板与待接触的芯片对准，使得待接触的所述芯片上的多个导电接触区域与 所述载体基板的第一表面上的连接部分。 然后，载体衬底通过粘合剂层连接到芯片上以使得载体衬底的连接部分和芯片的接触区域通过压力接触彼此抵接，而没有任何金属间化合物 建立连接。

公开(公告)号：US20110057312A1

公开(公告)日：2011-03-10

申请号：US12991581

申请日：2009-05-10

Applicant: Elke Zakel ,  Thorsten Teutsch

Inventor： Elke Zakel ,  Thorsten Teutsch

IPC: H01L23/485 ,  H01L21/60

CPC classification number: H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11902 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: The invention relates to a contact structure (24) and to a method for producing a contact structure for semiconductor substrates (21) or the like, in particular for terminal faces of semiconductor substrates, comprising a base contact part (22) arranged on a terminal face (20) of the semiconductor substrate and at least one connecting contact part (23) arranged on the base contact part, wherein the connecting contact part is formed from a connecting contact material (34) which has a lower melting point than a base contact material of the base contact part.

Abstract translation: 本发明涉及一种接触结构（24）以及一种用于制造用于半导体衬底（21）等的接触结构的方法，特别是涉及用于半导体衬底的端子面的接触结构（24），该接触结构包括设置在端子 所述半导体衬底的表面（20）和布置在所述基底接触部分上的至少一个连接接触部分（23），其中所述连接接触部分由熔点低于基底接触点的连接接触材料（34）形成 基部接触部件的材料。

公开(公告)号：US07882997B2

公开(公告)日：2011-02-08

申请号：US11572105

申请日：2005-07-11

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: B23K37/04

CPC classification number: H01L24/26 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/19043

Abstract: A method and a device for the mutual contacting of two wafer-type component composite configurations made of multiple identical components which are implemented coherently, in particular a semiconductor wafer (12) with a functional component wafer (14), to produce electronic assemblies on the wafer level, in which the component composite configurations are each situated on a receptacle unit (11; 13) and the contact pressure necessary for the contacting between contact metallizations of the component composite configurations to be connected to one another is generated in such a way that a vacuum is generated in a contact chamber which receives the component composite configurations and is delimited by the receptacle units, and the contacting of the contact metallizations is performed by a rear energy impingement of a component composite configuration.

Abstract translation: 一种用于相互接触的两个晶片型部件复合结构相互接触的方法和装置，所述两个晶片型部件复合结构由相干地实现的多个相同部件，特别是具有功能部件晶片（14）的半导体晶片（12）制成，以在其上产生电子组件 晶片级，其中部件复合结构各自位于插座单元（11; 13）上，并且以相互连接的部件复合结构的接触金属化之间的接触所需的接触压力被产生，使得 在接收室中产生真空，该接触室接收组件复合结构，并由容器单元限定，并且接触金属化的接触通过组件复合构造的后能量冲击来执行。

公开(公告)号：US07481352B2

公开(公告)日：2009-01-27

申请号：US10398336

申请日：2001-10-05

Applicant: Thorsten Teutsch ,  Elke Zakel

Inventor： Thorsten Teutsch ,  Elke Zakel

IPC: B23K1/018

CPC classification number: H01L24/12 ,  B23K1/018 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19043 ,  H05K3/225 ,  H05K3/3468 ,  H05K2203/044 ,  H05K2203/0776 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014

Abstract: The invention relates to a method for removing a plurality of raised places of contact made of a meltable metal, such as tin or indium or an alloy, such as tin-containing solder, silver-containing solder or lead-containing solder, the meltable metal being meltable above a first temperature limit, the places of contact being surface-distributed over a substrate. It is also possible to form vaulted domes on a plurality of metallic support segments which are located on one of the surfaces of a substrate. The invention aims at reducing production costs, particularly at removing a soldered layer once applied. If defective contact places occur, a plurality of the raised contact places, particularly substantially all contacts, are at least in substantial portions melted off from the substrate by contacting them with a molten metal. Between the substrate and the support segments distributed over the substrate and a surface of the molten metal an organic fluid may be present, the organic fluid being provided as a covering layer only and evaporating off the substrate surface, after the vaulted domes have been formed.

Abstract translation: 本发明涉及一种用于去除由诸如锡或铟的可熔融金属或诸如含锡焊料，含银焊料或含铅焊料的合金制成的多个凸起接触位置的方法，该可熔融金属 在第一温度极限以上可熔化，接触位置表面分布在基底上。 也可以在位于基板的一个表面上的多个金属支撑段上形成拱形圆顶。 本发明旨在降低生产成本，特别是一旦施加时去除焊接层。 如果发生有缺陷的接触位置，则多个凸起的接触位置，特别是基本上所有的接触件，至少通过使其与熔融金属接触而从基底熔化掉。 在衬底和分布在衬底上的支撑段和熔融金属的表面之间可以存在有机流体，有机流体仅在形成拱形圆顶之后被提供为覆盖层并且从衬底表面蒸发掉。