公开(公告)号：US06436300B2

公开(公告)日：2002-08-20

申请号：US09124776

申请日：1998-07-30

申请人： Eric J. Woolsey ,  Douglas G. Mitchell ,  George F. Carney ,  Francis J. Carney, Jr. ,  Cary B. Powell

发明人： Eric J. Woolsey ,  Douglas G. Mitchell ,  George F. Carney ,  Francis J. Carney, Jr. ,  Cary B. Powell

IPC分类号： H01B1300

CPC分类号： C23F1/26 ,  H01L21/32134 ,  H01L24/11 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

公开(公告)号：US06413878B1

公开(公告)日：2002-07-02

申请号：US09546595

申请日：2000-04-10

申请人： Eric J. Woolsey ,  Douglas G. Mitchell ,  George F. Carney ,  Francis J. Carney, Jr. ,  Cary B. Powell

发明人： Eric J. Woolsey ,  Douglas G. Mitchell ,  George F. Carney ,  Francis J. Carney, Jr. ,  Cary B. Powell

IPC分类号： H01L2100

CPC分类号： C23F1/26 ,  H01L21/32134 ,  H01L24/11 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

摘要翻译： 制造电子部件的方法包括将由焊料组成的顶部金属层（502）设置在由钛或钨构成的底部金属层（201,202）上，并且选择性地蚀刻顶部金属（201,202）上的底部金属层（201,202） 层（502）与由蚀刻剂组成的蚀刻剂混合物（601），用于控制蚀刻剂混合物（601）的温度的添加剂和另外的添加剂以减少顶层（502）的再沉积。

公开(公告)号：US5773359A

公开(公告)日：1998-06-30

申请号：US578255

申请日：1995-12-26

申请人： Douglas G. Mitchell ,  Francis J. Carney ,  Eric J. Woolsey

发明人： Douglas G. Mitchell ,  Francis J. Carney ,  Eric J. Woolsey

IPC分类号： H01L21/60 ,  H01L21/441

CPC分类号： H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/19043

摘要： An interconnect system (31) includes an interconnect bump (29) over an under bump metallurgy (25). The under bump metallurgy (25) includes a barrier layer (26) having a barrier material such as titanium, an adhesion layer (28) having an adhesion material such as copper, and a mixture layer (27) having both the barrier material and the adhesion material. The mixture layer (27) is located between the barrier layer (26) and the adhesion layer (28), and the adhesion layer (28) is located between the mixture layer (27) and the interconnect bump (29). The interconnect bump (29) contains solder and is used as an etch mask when patterning the under bump metallurgy (25).

摘要翻译： 互连系统（31）包括在凸块下金属（25）之上的互连凸块（29）。 凸块下冶金（25）包括具有诸如钛的阻挡材料的阻挡层（26），具有诸如铜的粘合材料的粘附层（28）和具有阻挡材料和 粘合材料。 混合层（27）位于阻挡层（26）和粘合层（28）之间，粘合层（28）位于混合层（27）和互连凸块（29）之间。 互连凸块（29）包含焊料，并且当图案化凸块下的金属（25）时用作蚀刻掩模。

公开(公告)号：US08722528B2

公开(公告)日：2014-05-13

申请号：US13597500

申请日：2012-08-29

申请人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

发明人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

IPC分类号： H01L21/70

CPC分类号： H01L23/49513 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/28 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05551 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/27002 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29018 ,  H01L2224/29028 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/013 ,  H01L2924/01402 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。

公开(公告)号：US20120322211A1

公开(公告)日：2012-12-20

申请号：US13597500

申请日：2012-08-29

申请人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

发明人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

IPC分类号： H01L21/60

CPC分类号： H01L23/49513 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/28 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05551 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/27002 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29018 ,  H01L2224/29028 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/013 ,  H01L2924/01402 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。

公开(公告)号：US08314473B2

公开(公告)日：2012-11-20

申请号：US12773552

申请日：2010-05-04

申请人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

发明人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

IPC分类号： H01L21/70

CPC分类号： H01L23/49513 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/28 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05551 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/27002 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29018 ,  H01L2224/29028 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/013 ,  H01L2924/01402 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。

公开(公告)号：US20110272792A1

公开(公告)日：2011-11-10

申请号：US12773552

申请日：2010-05-04

申请人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

发明人： Michael Gruenhagen ,  Thomas P. Welch ,  Eric J. Woolsey

IPC分类号： H01L23/498 ,  H01L23/488 ,  H01L23/495

CPC分类号： H01L23/49513 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/28 ,  H01L23/3107 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05551 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/27002 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29018 ,  H01L2224/29028 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/83447 ,  H01L2224/8346 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/013 ,  H01L2924/01402 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。