公开(公告)号：US08624281B2

公开(公告)日：2014-01-07

申请号：US12974621

申请日：2010-12-21

申请人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

摘要翻译： 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。

公开(公告)号：US20090001399A1

公开(公告)日：2009-01-01

申请号：US12163510

申请日：2008-06-27

申请人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

摘要翻译： 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。

公开(公告)号：US07868341B2

公开(公告)日：2011-01-11

申请号：US12163510

申请日：2008-06-27

申请人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

摘要翻译： 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。

公开(公告)号：US20110089455A1

公开(公告)日：2011-04-21

申请号：US12974621

申请日：2010-12-21

申请人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  F21V9/16

CPC分类号： H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

摘要翻译： 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。

公开(公告)号：US09077151B2

公开(公告)日：2015-07-07

申请号：US13041120

申请日：2011-03-04

申请人： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  S. James Speck

发明人： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  S. James Speck

IPC分类号： H01S5/00 ,  H01S5/32 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/343 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15

公开(公告)号：US08882935B2

公开(公告)日：2014-11-11

申请号：US13909775

申请日：2013-06-04

申请人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh K. Mishra

IPC分类号： H01L33/16 ,  H01L21/02 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/00 ,  C30B29/40 ,  C30B25/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/02

CPC分类号： H01L33/06 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US08790943B2

公开(公告)日：2014-07-29

申请号：US13593340

申请日：2012-08-23

申请人： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01S5/343 ,  H01L33/32

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01L21/02631 ,  H01L33/32 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

公开(公告)号：US08541869B2

公开(公告)日：2013-09-24

申请号：US12030099

申请日：2008-02-12

申请人： Shuji Nakamura ,  James S. Speck ,  Steven P. DenBaars ,  Anurag Tyagi

发明人： Shuji Nakamura ,  James S. Speck ,  Steven P. DenBaars ,  Anurag Tyagi

IPC分类号： H01L33/16

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3216

摘要： A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.

摘要翻译： 在具有半极性取向的III族氮化物衬底的表面上形成III族氮化物边缘发射激光二极管，其中通过沿着基本上垂直于III的非极性取向的方向产生裂解线来切割III族氮化物衬底 氮化物衬底，然后沿着切割线施加力以产生III族氮化物衬底的一个或多个切割面，其中所述切割面具有m面或平面取向。

公开(公告)号：US08502246B2

公开(公告)日：2013-08-06

申请号：US12370479

申请日：2009-02-12

申请人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh K. Mishra

IPC分类号： H01L33/18 ,  H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

公开(公告)号：US08294166B2

公开(公告)日：2012-10-23

申请号：US11954154

申请日：2007-12-11

申请人： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

发明人： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/22 ,  H01L33/387 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1815 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

摘要翻译： 透明发光二极管（LED）包括多个III族氮化物层，包括发射光的有源区，除了有源区以外的所有层对于光的发射波长是透明的，使得光是 通过所有层有效提取，并在多个方向通过层提取。 此外，一个或多个III族氮化物层的表面可以被粗糙化，纹理化，图案化或成形以增强光提取。