公开(公告)号：US09331037B2

公开(公告)日：2016-05-03

申请号：US14886177

申请日：2015-10-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03845 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/11011 ,  H01L2224/1134 ,  H01L2224/11472 ,  H01L2224/11616 ,  H01L2224/1162 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/2064

Abstract: “Thick line dies” that, during manufacture, avoid locating an upstanding edge of a photoresist layer (for example, the edge of a dry film photoresist layer) on top of a “discontinuity.” In this way solder does not flow into the mechanical interface between the photoresist layer and the layer under the photoresist layer in the vicinity of an upstanding edge of the photoresist layer.

Abstract translation: “粗线模具”，在制造过程中，避免在“不连续”的顶部定位光致抗蚀剂层（例如，干膜光致抗蚀剂层的边缘）的直立边缘。这样焊料不会流入机械 光致抗蚀剂层和光致抗蚀剂层下面的层之间在光致抗蚀剂层的直立边缘附近的界面。

公开(公告)号：US09397054B2

公开(公告)日：2016-07-19

申请号：US14876889

申请日：2015-10-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/58 ,  H01L23/522

CPC classification number: H01L23/562 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/522 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/03

Abstract: A semiconductor structure with an interconnect level above a substrate and including a conductive pad and a metallic structure, such as a base of a crackstop. A first dielectric layer is above the conductive pad and above the metallic structure. A first opening in the first dielectric layer is aligned with and exposes the conductive pad and a second opening is aligned with and exposes the metallic structure. A metallic liner lines the first opening and the second opening and is on the top surface of the first dielectric layer. A second dielectric layer is above the metallic liner and a third dielectric layer is above the second dielectric layer. A third opening exposes a portion of the metal liner above the conductive pad and a copper plug and pedestal are in the third opening on the exposed portion of the metal liner.

Abstract translation: 一种半导体结构，其具有在衬底上方的互连水平并且包括导电焊盘和金属结构，例如裂缝挡板的基部。 第一介电层位于导电焊盘的上方，并在金属结构之上。 第一介电层中的第一开口与导电焊盘对准并且暴露，并且第二开口与金属结构对准并且暴露出金属结构。 金属衬垫将第一开口和第二开口线排列在第一介电层的顶表面上。 第二电介质层在金属衬垫之上，第三电介质层位于第二电介质层之上。 第三个开口将金属衬垫的一部分暴露在导电垫的上方，铜插头和基座位于金属衬垫的暴露部分的第三个开口中。

公开(公告)号：US09257352B2

公开(公告)日：2016-02-09

申请号：US13835358

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: G01R31/02 ,  G01R31/26 ,  H01L21/66

CPC classification number: H01L22/34

Abstract: A test wafer is disclosed with a first side configured to have integrated circuits formed thereon and a second side with a test structure formed thereon. The test wafer can include electrical test structures embedded in the second side of the wafer. An electrical test of the test wafer can be performed after handling by a tool used in a wafer manufacturing process to determine if the tool caused a defect on the second side of the wafer. The test structure can include a blanket layer disposed on the second side of the wafer. The test wafer can then be exposed to a wet etch and inspected thereafter for the presence of an ingress path caused from the etch chemistry. The presence of an ingress path is an indication that the tool used prior to the wet etch caused a defect in the wafer.

Abstract translation: 公开了一种测试晶片，其第一侧被配置为具有形成在其上的集成电路，以及形成有测试结构的第二侧。 测试晶片可以包括嵌入晶片第二侧的电测试结构。 测试晶片的电气测试可以在通过晶片制造过程中使用的工具处理之后进行，以确定工具是否在晶片的第二侧引起缺陷。 测试结构可以包括布置在晶片的第二侧上的覆盖层。 然后可以将测试晶片暴露于湿蚀刻，然后检查是否存在由蚀刻化学物质引起的入口路径。 进入路径的存在表示在湿蚀刻之前使用的工具导致晶片中的缺陷。

公开(公告)号：US10049897B2

公开(公告)日：2018-08-14

申请号：US15421737

申请日：2017-02-01

Applicant: GLOBALFOUNDRIES INC.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L21/306 ,  H01L23/498 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, an interconnect structure can include: a photosensitive polyimide (PSPI) layer including a pedestal portion; a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer; a solder overlying the C4 bump and contacting a side of the C4 bump; and an underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal.

公开(公告)号：US20170148754A1

公开(公告)日：2017-05-25

申请号：US15421737

申请日：2017-02-01

Applicant: GlobalFoundries Inc.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/563 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/3192 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05113 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05613 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/014

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, an interconnect structure can include: a photosensitive polyimide (PSPI) layer including a pedestal portion; a controlled collapse chip connection (C4) bump overlying the pedestal portion of the PSPI layer; a solder overlying the C4 bump and contacting a side of the C4 bump; and an underfill layer abutting the pedestal portion of the PSPI and the C4 bump, wherein the underfill layer and the solder form a first interface separated from the PSPI pedestal.

公开(公告)号：US09633962B2

公开(公告)日：2017-04-25

申请号：US14048483

申请日：2013-10-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Ekta Misra ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065

CPC classification number: H01L24/11 ,  H01L21/7684 ,  H01L21/76877 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03602 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/94 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014

Abstract: Solder bump connections and methods for fabricating solder bump connections. A passivation layer is formed on a dielectric layer. Via openings extend through the passivation layer from a top surface of the passivation layer to a metal line in the passivation layer. A conductive layer is formed on the top surface of the passivation layer and within each via opening. When the passivation layer and the conductive layer are planarized, a plug is formed that includes sections in the via openings. Each section is coupled with the metal line.

公开(公告)号：US20160043048A1

公开(公告)日：2016-02-11

申请号：US14886177

申请日：2015-10-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/03845 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/11011 ,  H01L2224/1134 ,  H01L2224/11472 ,  H01L2224/11616 ,  H01L2224/1162 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/2064

Abstract: “Thick line dies” that, during manufacture, avoid locating an upstanding edge of a photoresist layer (for example, the edge of a dry film photoresist layer) on top of a “discontinuity.” In this way solder does not flow into the mechanical interface between the photoresist layer and the layer under the photoresist layer in the vicinity of an upstanding edge of the photoresist layer.

公开(公告)号：US20160027744A1

公开(公告)日：2016-01-28

申请号：US14876889

申请日：2015-10-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00

CPC classification number: H01L23/562 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/522 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/03

Abstract: A method including forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate, forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure, and forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer. The method may further include forming a second dielectric layer above the metallic liner, and forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.

Abstract translation: 一种方法，包括在导电焊盘上方和金属结构之上形成第一电介质层，导电焊盘和金属结构各自位于衬底上方的互连层内，在第一介电层中形成第一开口和第二开口， 所述第一开口与所述导电焊盘对准并且暴露所述导电焊盘，并且所述第二开口与所述金属结构对准并且暴露所述金属结构，并且在所述导电焊盘上，所述金属结构上以及所述第一介电层上方形成金属衬垫。 该方法还可以包括在金属衬垫之上形成第二电介质层，以及在第二电介质层之上形成第三电介质层，第三电介质层比第一电介质层或第二电介质层厚。