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    Non-volatile memory device
    3.
    发明授权
    Non-volatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08547747B2

    公开(公告)日：2013-10-01

    申请号：US13191581

    申请日：2011-07-27

    申请人： Su-Kyoung Kim ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    发明人： Su-Kyoung Kim ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    IPC分类号： G11C16/04

    CPC分类号： H01L29/7926 ,  G11C5/063 ,  G11C16/0483 ,  H01L27/11582

    摘要： A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

    摘要翻译： 提供了一种非易失性存储器件，包括由单晶半导体形成的衬底，垂直于衬底延伸的柱状半导体图案，多个栅极电极和与衬底垂直交替堆叠的多个层间电介质层，以及 形成在所述多个栅极电极和所述多个层间电介质层之间的电荷扩展阻挡层。

    NON-VOLATILE MEMORY DEVICE
    4.
    发明申请
    NON-VOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20120120728A1

    公开(公告)日：2012-05-17

    申请号：US13191581

    申请日：2011-07-27

    申请人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    发明人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

    IPC分类号： G11C11/34 ,  H01L21/336 ,  H01L29/788

    CPC分类号： H01L29/7926 ,  G11C5/063 ,  G11C16/0483 ,  H01L27/11582

    摘要： A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

    摘要翻译： 提供了一种非易失性存储器件，包括由单晶半导体形成的衬底，垂直于衬底延伸的柱状半导体图案，多个栅电极和与衬底垂直交替堆叠的多个层间电介质层，以及 形成在所述多个栅极电极和所述多个层间电介质层之间的电荷扩展阻挡层。

    Method of fabricating semiconductor device
    5.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08889543B2

    公开(公告)日：2014-11-18

    申请号：US13795807

    申请日：2013-03-12

    申请人： Jong-Min Baek ,  In-Sun Park ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hei-Seung Kim ,  Jung-Soo Yoon

    发明人： Jong-Min Baek ,  In-Sun Park ,  Jong-Myeong Lee ,  Jong-Won Hong ,  Hei-Seung Kim ,  Jung-Soo Yoon

    IPC分类号： H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76885

    摘要： A method of fabricating a semiconductor device includes forming switching devices on a substrate. A lower structure is formed in the substrate having the switching devices. A lower conductive layer is formed on the lower structure. Sacrificial mask patterns are formed on the lower conductive layer. Lower conductive patterns are formed by etching the lower conductive layer using the sacrificial mask patterns as an etch mask. An interlayer insulating layer is formed on the substrate having the lower conductive patterns. Interlayer insulating patterns are formed by planarizing the interlayer insulating layer until the sacrificial mask patterns are exposed. Openings exposing the lower conductive patterns are formed by removing the exposed sacrificial mask patterns. Upper conductive patterns self-aligned with the lower conductive patterns are formed in the openings.

    摘要翻译： 制造半导体器件的方法包括在衬底上形成开关器件。 在具有开关装置的基板中形成下部结构。 下导电层形成在下结构上。 牺牲掩模图案形成在下导电层上。 通过使用牺牲掩模图案作为蚀刻掩模蚀刻下导电层来形成下导电图案。 在具有较低导电图案的基板上形成层间绝缘层。 通过平坦化层间绝缘层直到牺牲掩模图案曝光来形成层间绝缘图案。 通过去除暴露的牺牲掩模图案来形成露出下导电图案的开口。 在开口中形成与下导电图案自对准的上导电图案。

    Method of forming a contact in a semiconductor device
    6.
    发明授权
    Method of forming a contact in a semiconductor device 失效
    在半导体器件中形成接触的方法

    公开(公告)号：US06905960B2

    公开(公告)日：2005-06-14

    申请号：US10657140

    申请日：2003-09-09

    申请人： Hong-Mi Park ,  Jong-Sik Chun ,  Hyeon-Deok Lee ,  In-Sun Park ,  Jong-Myeong Lee ,  Ju-Cheol Shin

    发明人： Hong-Mi Park ,  Jong-Sik Chun ,  Hyeon-Deok Lee ,  In-Sun Park ,  Jong-Myeong Lee ,  Ju-Cheol Shin

    IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/76843 ,  H01L21/76871

    摘要： In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.

    摘要翻译： 在半导体器件中形成接触的方法中，在半导体衬底上形成绝缘层。 然后，通过选择性地蚀刻绝缘层形成接触孔。 阻挡金属层沉积在接触孔的侧表面和底表面上，并且在绝缘层的顶表面上沉积到均匀的厚度。 在阻挡金属层上沉积抗氧化金属材料的润湿层。 在润湿层上形成金属层，并填充接触孔，从而在半导体器件中形成接触。

    Methods for forming aluminum metal wirings
    9.
    发明授权
    Methods for forming aluminum metal wirings 有权
    铝金属布线形成方法

    公开(公告)号：US06673718B1

    公开(公告)日：2004-01-06

    申请号：US10305244

    申请日：2002-11-27

    申请人： Jong-Myeong Lee ,  In-Sun Park ,  Hyeon-Deok Lee ,  Jong-Sik Chun

    发明人： Jong-Myeong Lee ,  In-Sun Park ,  Hyeon-Deok Lee ,  Jong-Sik Chun

    IPC分类号： H01L2144

    CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L2221/1089

    摘要： An aluminum wiring is selectively formed within a contact hole or groove of a substrate. An intermediate layer which includes nitrogen is formed over the main surface of a substrate and over the interior surface of the contact hole or groove. A first surface portion of the intermediate layer which is located over the main surface of the substrate is treated with a plasma to form a passivity layer at the first surface portion of the intermediate layer. Then, without an intervening vacuum break, an aluminum film is CAD deposited only over a second surface portion of the intermediate layer which is located over the interior surface of the contact hole or recess. The plasma treatment of the first surface portion of the intermediate layer prevents the CAD deposition of the aluminum film over the first surface portion of the intermediate layer.

    摘要翻译： 在基板的接触孔或凹槽内选择性地形成铝布线。 包含氮的中间层形成在基板的主表面上并在接触孔或凹槽的内表面上方。 用等离子体处理位于基板的主表面上方的中间层的第一表面部分，以在中间层的第一表面部分处形成被动层。 然后，没有中间真空断裂，铝膜仅沉积在中间层的位于接触孔或凹槽的内表面上方的第二表面部分上。 中间层的第一表面部分的等离子体处理防止铝膜在中间层的第一表面部分上的CAD沉积。

    Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer
    10.
    发明申请
    Method of forming polycide layer and method of manufacturing semiconductor device having polycide layer 审中-公开
    形成聚酰亚胺层的方法和制造具有多晶硅化物层的半导体器件的方法

    公开(公告)号：US20060281289A1

    公开(公告)日：2006-12-14

    申请号：US11446981

    申请日：2006-06-06

    申请人： Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

    发明人： Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/26513 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833

    摘要： In a method of forming a polycide layer and method of manufacturing a semiconductor device having the polycide layer, the method may include forming a preliminary polysilicon layer doped with first type impurities on a substrate having a first region and a second region, implanting second type of impurities into a portion of the preliminary polysilicon layer on the second region, heat treating the preliminary polysilicon layer to electrically activate the impurities, removing a portion of an upper surface of the heat treated preliminary polysilicon layer to obtain a polysilicon layer, forming a metal silicide layer on the polysilicon layer, and patterning the polysilicon layer and the metal silicide layer to form a first type gate electrode on the first region and to form a second type gate electrode on the second region.

    摘要翻译： 在形成多晶硅化合物层的方法和制造具有多晶硅化物层的半导体器件的方法中，该方法可以包括在具有第一区域和第二区域的衬底上形成掺杂有第一类型杂质的初步多晶硅层， 杂质进入第二区域的初步多晶硅层的一部分，热处理初步多晶硅层以电激活杂质，去除热处理的初步多晶硅层的上表面的一部分以获得多晶硅层，形成金属硅化物 并且在所述第一区域上形成所述多晶硅层和所述金属硅化物层以形成第一类型的栅电极，并在所述第二区域上形成第二类型的栅电极。