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45 条记录 (耗时 0.033 秒)

    Fine silica tube and process for making same
    1.
    发明授权
    Fine silica tube and process for making same 失效
    精细硅胶管及其制造方法

    公开(公告)号：US5573983A

    公开(公告)日：1996-11-12

    申请号：US554715

    申请日：1995-11-07

    申请人： Hidenori Nakamura ,  Yasushi Matsui ,  Takao Goto

    发明人： Hidenori Nakamura ,  Yasushi Matsui ,  Takao Goto

    IPC分类号： C03C3/06 ,  C01B33/152 ,  C01B33/16 ,  C03B8/02 ,  C03B19/12 ,  C03B20/00 ,  C03C1/00 ,  C03C13/02 ,  C03C13/00

    CPC分类号： C01B33/163 ,  C03B19/12 ,  C03C1/006

    摘要： A fine silica tube composed of silica gel and having an outer diameter of 0.05 to 2 .mu.m wherein the cylindrical wall portion of the tube has a cross-section defined by a substantially square outer periphery and a substantially square vacant center, or by a circular outer periphery and a substantially square vacant center; and a fine silica tube composed of silica glass and having an outer diameter of 0.05 to 1.4 .mu.m wherein the cylindrical wall portion of the tube has a cross-section defined by a substantially square outer periphery and a substantially square vacant center. The fine silica gel tube is made by treating a tetraalkoxysilane with ammonia or aqueous ammonia in a water-soluble alcohol medium in the presence of tartaric acid, citric acid, a tartaric acid salt or a citric acid salt, whereby the tetraalkoxysilane is hydrolyzed. The fine silica glass tube is made by calcining the fine silica gel tube at 800.degree. to 1,400.degree. C.

    摘要翻译： 由硅胶构成的外径为0.05〜2μm的二氧化硅细管，其特征在于，所述管的筒状壁部的截面形状为大致正方形的外周面，大致为空心的中心， 外周边和大致正方形的空中心; 以及由石英玻璃构成的外径为0.05〜1.4μm的细石英管，其中管的圆筒壁部分具有由基本上正方形的外周和基本上为空的中心限定的横截面。 通过在酒石酸，柠檬酸，酒石酸盐或柠檬酸盐的存在下，在水溶性醇介质中用氨或氨水处理四烷氧基硅烷，由此使四烷氧基硅烷水解，制成精细硅胶管。 细硅石玻璃管是通过在800〜1400℃下煅烧精细硅胶管制成的。

    Strained multiple quantum well semiconductor laser and a method for producing the same
    3.
    发明授权
    Strained multiple quantum well semiconductor laser and a method for producing the same 失效
    应变多量子阱半导体激光器及其制造方法

    公开(公告)号：US5339325A

    公开(公告)日：1994-08-16

    申请号：US101933

    申请日：1993-08-04

    申请人： Masahiro Kito ,  Yasushi Matsui

    发明人： Masahiro Kito ,  Yasushi Matsui

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/34313 ,  H01S5/2275 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  Y10S438/938

    摘要： A strained multiple quantum well semiconductor laser including a semiconductor substrate, a multiple quantum well active layer including a plurality quantum well layers and a plurality of barrier layers, and a multilayer structure including the above multiple quantum well active layer is provided. Each barrier layer is interposed between two of the multiple quantum well active layers. The multilayer structure is formed upon the semiconductor substrate. Herein, at least one of the plurality of barrier layers is thicker than the other barrier layers, thereby serving as a layer absorbing strain which is stored in the barrier layers due to a difference between the lattice constant of semiconductor substrate and the lattice constant each quantum well layer.

    摘要翻译： 提供了包括半导体衬底的应变量子阱半导体激光器，包括多个量子阱层和多个势垒层的多量子阱活性层以及包括上述多量子阱活性层的多层结构。 每个阻挡层插入在多个量子阱活性层中的两个之间。 多层结构形成在半导体衬底上。 这里，多个阻挡层中的至少一个比其他阻挡层厚，从而由于半导体衬底的晶格常数和每个量子之间的晶格常数之间的差异而被用作存储在势垒层中的层吸收应变 井层。

    Method of making a semiconductor integrated device having gate sidewall structure
    4.
    发明授权
    Method of making a semiconductor integrated device having gate sidewall structure 失效
    制造具有栅极侧壁结构的半导体集成器件的方法

    公开(公告)号：US5338699A

    公开(公告)日：1994-08-16

    申请号：US10691

    申请日：1993-01-29

    申请人： Makoto Ohi ,  Hideaki Arima ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yasushi Matsui

    发明人： Makoto Ohi ,  Hideaki Arima ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yasushi Matsui

    IPC分类号： H01L27/04 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L27/10852 ,  H01L21/76801 ,  H01L21/76834 ,  H01L27/10808 ,  Y10S257/90

    摘要： A method of making a semiconductor device including a plurality of gate electrodes (6a, 6b, 6c, 6d) arranged on the surface of a semiconductor substrate (1) with insulating layers (5, 8) covering the top and the side walls of the gate electrodes. The spaces between the opposing side walls of adjacent gate electrodes on the surface of the element isolation region (2) are smaller than twice the thickness of the thinnest insulating layer (8) among the insulating layers of the side walls of the gate electrodes on the surface of the active regions. The space (14) between the gate electrodes on the element isolation region is filled with the insulating isolation layer (8) so that unevenness in the underlying portion on the element isolation region on which the conductive interconnection layer (10) to be formed is reduced, preventing thinning of the conductive interconnection layer and disconnection due to excessive etching of a resist film in patterning the conductive interconnection layer.

    摘要翻译： 一种制造半导体器件的方法，该半导体器件包括布置在半导体衬底（1）的表面上的多个栅电极（6a，6b，6c，6d），绝缘层（5,8）覆盖了顶部和侧壁 栅电极。 元件隔离区域（2）表面上的相邻栅电极的相对侧壁之间的间隔小于栅电极侧壁绝缘层中最薄绝缘层（8）的厚度的两倍 活性区的表面。 元件隔离区域上的栅电极之间的空间（14）填充有绝缘隔离层（8），使得要形成导电互连层（10）的元件隔离区域上的下面部分的不均匀性减小 防止导电互连层变薄，并且在图案化导电互连层时由于抗蚀剂膜的过度蚀刻而导致的断开。

    Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions
    5.
    发明授权
    Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions 失效
    制造具有接触源极/漏极区域的互连层的半导体器件的方法

    公开(公告)号：US5240872A

    公开(公告)日：1993-08-31

    申请号：US925148

    申请日：1992-08-06

    申请人： Kaoru Motonami ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yoshinori Okumura ,  Yasushi Matsui

    发明人： Kaoru Motonami ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yoshinori Okumura ,  Yasushi Matsui

    IPC分类号： H01L21/8242 ,  H01L23/485 ,  H01L27/108

    CPC分类号： H01L27/10873 ,  H01L23/485 ,  H01L27/10817 ,  H01L2924/0002

    摘要： A semiconductor device includes a MOS type field effect transistor whose gate electrode (4) has its surface covered with a first insulating film (5) and left and right sides provided with a pair of second insulating films (10). A first conductive layer (12, 13) is formed on the surface of the source/drain region (8, 11) and the surface of one of a pair of second insulating films (10) which are positioned on one side of the gate electrode (4). A third insulating film (24b) is formed at least on the surface of the second insulating film (10) on which the first conductive layer (12, 13) is not formed. A second conductive layer (18) is provided on the surface of the third insulating film (24b) and on the source/drain region (8, 11) on which the third insulating film (24b) is formed. This structure enables provision of a semiconductor device in which a contact hole can be formed in self-alignment, independent from the influence of errors in the step of patterning a resist mask.

    摘要翻译： 半导体器件包括MOS型场效应晶体管，其栅极（4）的表面被第一绝缘膜（5）覆盖，左右侧设置有一对第二绝缘膜（10）。 第一导电层（12,13）形成在源/漏区（8,11）的表面上，并且一对第二绝缘膜（10）中的一个位于栅电极的一侧的表面 （4）。 至少在没有形成第一导电层（12,13）的第二绝缘膜（10）的表面上形成第三绝缘膜（24b）。 在第三绝缘膜（24b）的表面和形成有第三绝缘膜（24b）的源/漏区（8,11）上设置第二导电层（18）。 该结构能够提供可以独立于图案化抗蚀剂掩模的步骤中的误差的影响的自对准中形成接触孔的半导体器件。

    Active matrix substrate and its manufacturing method
    6.
    发明授权
    Active matrix substrate and its manufacturing method 有权
    有源矩阵基板及其制造方法

    公开(公告)号：US07923729B2

    公开(公告)日：2011-04-12

    申请号：US12470978

    申请日：2009-05-22

    申请人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

    发明人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

    IPC分类号： H01L29/04 ,  H01L29/10

    CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L51/56

    摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.

    摘要翻译： 提供具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。 栅极线和辅助电容电极形成在绝缘基板上。 辅助电容电极具有从其形成的孔。 为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。 然后，形成第二层间绝缘膜以覆盖所有这些层。 在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。 形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

    Distributed feedback semiconductor laser and method for fabricating the same
    8.
    发明授权
    Distributed feedback semiconductor laser and method for fabricating the same 失效
    分布式反馈半导体激光器及其制造方法

    公开(公告)号：US5764682A

    公开(公告)日：1998-06-09

    申请号：US606455

    申请日：1996-02-23

    申请人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

    发明人： Masato Ishino ,  Masahiro Kitoh ,  Nobuyuki Otsuka ,  Yasushi Matsui

    IPC分类号： H01L21/00 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3403 ,  H01S5/3428 ,  H01S5/3434 ,  Y10S148/095

    摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.

    摘要翻译： 一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。 衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。 量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域 。 光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。