摘要:
A method for forming three-dimensional circuitization in a substrate is provided for forming conductive traces and via contacts. In the method, a substrate formed of a substantially insulating material is first provided, grooves and apertures in a top surface of and through the substrate are then formed, followed by filling the grooves and apertures with an electrically conductive material such as a solder. The method can be carried out at a low cost to produce high quality circuit substrates by utilizing an injection molded solder technique or a molten solder screening technique to fill the grooves and the apertures. The grooves and the apertures in the substrate may be formed by a variety of techniques such as chemical etching, physical machining and hot stamping.
摘要:
A process is described for forming a common input-output (I/O) site that is suitable for both wire-bond and solder bump flip chip connections, such as controlled-collapse chip connections (C4). The present invention is particularly suited to semiconductor chips that use copper as the interconnection material, in which the soft dielectrics used in manufacturing such chips are susceptible to damage due to bonding forces. The present invention reduces the risk of damage by providing site having a noble metal on the top surface of the pad, while providing a diffusion barrier to maintain the high conductivity of the metal interconnects. Process steps for forming an I/O site within a substrate are reduced by providing a method for selectively depositing metal layers in a feature formed in the substrate. Since the I/O sites of the present invention may be used for either wire-bond or solder bump connections, this provides increased flexibility for chip interconnection options, while also reducing process costs.
摘要:
A method for direct chip attach of a semiconductor chip to a circuit board by using solder bumps and an underfill layer is disclosed. In the method, a layer of in-situ polymeric mold material is first screen printed on the top surface of the semiconductor chip exposing a multiplicity of bond pads. The in-situ polymeric mold layer is formed with a multiplicity of apertures which are then filled with solder material in a molten solder screening process to form solder bumps. A thin flux-containing underfill material layer is then placed on top of a circuit board over a plurality of conductive pads which are arranged in a mirror image to the bond pads on the semiconductor chip. The semiconductor chip and the circuit board are then pressed together with the underfill layer inbetween and heated to a reflow temperature of higher than the melting temperature of the solder material until electrical communication is established between the bond pads and the conductive pads. In the bonded assembly, the in-situ polymeric mold layer and the underfill material layer forms a composite underfill to replace a conventional underfill material that must be injected between bonded chip and substrate by a capillary action in a time consuming process.
摘要:
A method for testing integrated circuit chips with probe wires on flat solder bumps and IC chips that are equipped with flat solder bumps are disclosed. In the method, an IC chip that has a multiplicity of bond pads and a multiplicity of flat solder bumps are first provided in which each of the solder bumps has a height less than null of its diameter on the multiplicity of bond pads. The probe wires can thus be easily used to contact the increased target area on the solder bumps for establishing electrical connection with a test circuit. The probe can further be conducted easily with all the Z height of the bumps are substantially equal. The height of the solder bumps may be suitably controlled by either a planarization process in which soft solder bumps are compressed by a planar surface, or solder bumps are formed in an in-situ mold by either a MSS or an electroplating process for forming solder bumps in the shape of short cylinders. When the MSS method is used for planting the bumps, solder bumps are transferred onto the wafer surface in a substantially flattened hemi-spherical shape.
摘要:
An apparatus and a method for filling high aspect ratio holes in electronic substrates that can be advantageously used for filling holes having aspect ratios larger than 5:1 are disclosed. In the apparatus, a filler plate and a vacuum plate are used in conjunction with a connection means such that a gap is formed between the two plates to accommodate an electronic substrate equipped with high aspect ratio via holes. The filler plate is equipped with an injection slot while the vacuum plate is equipped with a vacuum slot such that when a substrate is sandwiched therein, via holes can be evacuated of air and injected with a liquid simultaneously from a bottom side and a top side of the substrate. The present invention novel apparatus and method allows the filling of via holes that have small diameters, i.e., as small as 10 nullm, and high aspect ratios, i.e., at least 5:1 to be filled with an electrically conductive material such as a solder or a conductive polymer such that vias or interconnects can be formed in electronic substrates. The present invention apparatus and method can be advantageously used in fabricating substrates for display panels by forming conductive vias and interconnects for placing a voltage potential on pixel display elements formed on the display panels.
摘要:
A method for joining a multiplicity of multi-alloy solder columns to an electronic substrate and the structure formed by such method are disclosed. In the method, a mold plate equipped with a multiplicity of cavities is first filled by an injection molded solder technique with a high temperature solder forming a multiplicity of solder columns. The mold plate is then sandwiched between an extraction plate and a transfer plate by utilizing a multiplicity of displacement means equipped in the extraction plate to displace the multiplicity of solder columns from the mold plate into a multiplicity of apertures equipped in the transfer plate. The multiplicity of cavities in the transfer plate each has a straight opening and a flared opening. The flared opening is then filled with a low temperature solder paste to encapsulate one end of the high temperature solder column. The low temperature solder paste is then reflown on top of a conductive pad on an electronic substrate at a temperature lower than the melting temperature of the high temperature solder to form a bond between the solder column and the conductive pad.