Interconnection lines for wafer-scale-integrated assemblies
    2.
    发明授权
    Interconnection lines for wafer-scale-integrated assemblies 失效
    用于晶片级集成组件的互连线

    公开(公告)号:US4703288A

    公开(公告)日:1987-10-27

    申请号:US719533

    申请日:1985-04-03

    摘要: In wafer-scale-integrated assemblies, microminiature transmission lines are utilized as interconnects on the wafer. The extremely small cross-sectional area of a typical such line results in its total line resistance being relatively large. Such a line exhibits signal reflections and resonances. In practice, it is not feasible to eliminate these effects by conventional load termination techniques. As a result, the frequency at which digital signals can be transmitted over such a line is typically limited to well below its so-called resonance limit. In accordance with a feature of the invention, the structural parameters of each line are selected to meet specified design criteria that ensure optimal high-frequency performance of the line.

    摘要翻译: 在晶片级集成组件中,微型传输线被用作晶片上的互连。 典型的这种线的极小的横截面积导致其总线路电阻相对较大。 这样一条线表现出信号反射和谐振。 在实践中,通过传统的负载终止技术消除这些影响是不可行的。 结果,数字信号可以通过这种线传输的频率通常被限制在远远低于其所谓的共振极限。 根据本发明的特征,选择每条线的结构参数以满足确保线路的最佳高频性能的规定设计标准。

    Optical fiber switch
    4.
    发明授权
    Optical fiber switch 失效
    光纤开关

    公开(公告)号:US5000532A

    公开(公告)日:1991-03-19

    申请号:US431941

    申请日:1989-11-06

    IPC分类号: G02B6/35 G02B6/36

    摘要: A precisely aligned optical fiber switch assembly. A base member has a vee groove for supporting a fixed optical fiber and a second optical fiber in optical alignment with the fixed fiber. The groove contains sections of different dimensions that receive and align sheathed portions of the fibers and groove sections that receive and align unsheathed portions of the fibers. First aligning means on the base member longitudinally position the fixed and second fibers in the groove. Covering means mate with the base member for covering at least part of the sheathed portions of the fibers. Aligning means position the covering means precisely with respect to the base member.

    摘要翻译: 精密对准的光纤开关组件。 基座构件具有用于支撑固定光纤的vee槽和与固定光纤对准的第二光纤。 凹槽包含不同尺寸的部分,其接收和对准纤维的护套部分和容纳和对准纤维未固化部分的凹槽部分。 基体上的第一对准装置将固定和第二纤维纵向定位在槽中。 覆盖装置与基部构件配合以覆盖纤维的至少一部分护套部分。 对准装置将覆盖装置相对于基座构件精确地定位。

    Temporary connections for fast electrical access to electronic devices
    6.
    发明授权
    Temporary connections for fast electrical access to electronic devices 失效
    用于快速电气接入电子设备的临时连接

    公开(公告)号:US5481205A

    公开(公告)日:1996-01-02

    申请号:US344393

    申请日:1994-11-23

    摘要: A given testing substrate for fast-testing many integrated-circuit electronic devices, one after the other, has a set of mutually insulated collated wiring areas that can be aligned with solder-bump I/O pads of the electronic devices. At the surface of each of the corrugated areas is located a layer that is an electrically conductive durable oxide, or that is itself durable, electrically conductive, and non-oxidizable. During testing, the solder-bump I/O pads of the electronic device being tested are aligned with and pressed against the corrugated wiring areas of the given substrate. Alternatively, the electronic devices being of the electrically programmable variety, such as EPROMs, programming voltages can be delivered to each of the devices, one after the other, through the corrugated wiring areas of a single substrate.

    摘要翻译: 给定的用于快速测试许多集成电路电子器件的测试基板,一个接一个地具有一组可以与电子器件的焊料凸块I / O焊盘对准的相互绝缘的整理布线区域。 在每个波纹区域的表面上设置有导电耐用氧化物的层,或者其本身是耐用的,导电的和不可氧化的。 在测试期间,正在测试的电子器件的焊料凸块I / O焊盘与给定衬底的波纹布线区域对准并压紧。 或者,可以通过单个基板的波纹布线区域,一个接一个地将诸如EPROM的编程电压的电可编程品种的电子装置传送到每个装置。

    Method for fabricating devices with DC bias-controlled reactive ion
etching
    8.
    发明授权
    Method for fabricating devices with DC bias-controlled reactive ion etching 失效
    用直流偏置控制反应离子蚀刻制造器件的方法

    公开(公告)号:US4496448A

    公开(公告)日:1985-01-29

    申请号:US541459

    申请日:1983-10-13

    摘要: A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.

    摘要翻译: 公开了一种用于制造器件的方法和装置,该方法包括新的反应离子蚀刻技术。 通过本发明的反应离子蚀刻技术,通过根据预先选择的标准放电反应离子蚀刻设备的电极,例如,高的蚀刻速率和例如高的蚀刻选择性 所述电极等于或超过预选值。

    Anisotropic wet etching of chalcogenide glass resists
    9.
    发明授权
    Anisotropic wet etching of chalcogenide glass resists 失效
    硫属化物玻璃抗蚀剂的各向异性湿蚀刻

    公开(公告)号:US4454221A

    公开(公告)日:1984-06-12

    申请号:US366646

    申请日:1982-04-08

    摘要: A method for enhancing linewidth control during the patterning of a substrate with a resist is disclosed. Resists used in the invention have chemically separated structures characterized by two types of regions of different chemical composition, which different types of regions are interspersed among each other. Because the resists used in the present invention have chemically separated structures, anisotropic wet development of these resists is achievable with an appropriate bicomponent wet developer. Consequently, after exposure, the image formed in a thin, upper layer of the resist is transferred with vertical walls through the thickness of the resist.

    摘要翻译: 公开了一种在用抗蚀剂图案化衬底的过程中增强线宽控制的方法。 用于本发明的抗蚀剂具有化学分离的结构,其特征在于两种不同化学组成的区域,其中不同类型的区域彼此散布。 因为本发明中使用的抗蚀剂具有化学分离的结构,所以用适当的双组分湿式显影剂可以实现这些抗蚀剂的各向异性湿法显影。 因此,在曝光之后,形成在抗蚀剂的较薄上层的图像通过抗蚀剂的厚度以垂直壁转印。