摘要:
A laser device is bonded to a diamond submount by means of a procedure including (1) codepositing an auxiliary layer, on a layer of barrier metal that has been deposited overlying the submount, followed by (2) depositing a wetting layer on the auxiliary layer, and (3) by depositing a solder layer comprising alternating metallic layers, preferably of gold and tin sufficient to form an overall tin-rich gold-tin eutectic composition. The barrier metal is typically W, Mo, Cr, or Ru. Prior to bonding, a conventional metallization such as Ti-Pt-Au (three layers) is deposited on the laser device's bottom ohmic contact, typically comprising Ge. Then, during bonding, the solder layer is brought into physical contact with the laser device's metallization under enough heat and pressure, followed by cooling, to form a permanent joint between them. The thickness of the solder layer is advantageously less than approximately 5 .mu.m. The wetting layer is preferably the intermetallic compound Ni.sub.3 Sn.sub.4, and the auxiliary layer is formed by codepositing the metallic components of this intermetallic together with the barrier metal.
摘要:
In wafer-scale-integrated assemblies, microminiature transmission lines are utilized as interconnects on the wafer. The extremely small cross-sectional area of a typical such line results in its total line resistance being relatively large. Such a line exhibits signal reflections and resonances. In practice, it is not feasible to eliminate these effects by conventional load termination techniques. As a result, the frequency at which digital signals can be transmitted over such a line is typically limited to well below its so-called resonance limit. In accordance with a feature of the invention, the structural parameters of each line are selected to meet specified design criteria that ensure optimal high-frequency performance of the line.
摘要:
In accordance with the present invention, an integrated circuit package comprises a thermally conductive plate for receiving an integrated circuit and an open rectangular structure of conductor and insulator for surrounding the sides of the circuit and presenting one or more linear arrays of conductive connectors extending laterally through the rectangular structure. Preferably the rectangular structure also includes transverse contacts. Advantageously the plate includes extensions beyond the rectangular structure for acting as cooling fins on opposing sides of the rectangular structure. The linear arrays and cooling fins are preferably on different pairs of parallel sides.
摘要:
A precisely aligned optical fiber switch assembly. A base member has a vee groove for supporting a fixed optical fiber and a second optical fiber in optical alignment with the fixed fiber. The groove contains sections of different dimensions that receive and align sheathed portions of the fibers and groove sections that receive and align unsheathed portions of the fibers. First aligning means on the base member longitudinally position the fixed and second fibers in the groove. Covering means mate with the base member for covering at least part of the sheathed portions of the fibers. Aligning means position the covering means precisely with respect to the base member.
摘要:
An m-input/n-output (e.g., 2.times.2) optical fiber switch is disclosed which alters the location of the fibers by the application of an external force. Illustratively, the switch uses a housing with a diamond-shaped opening extending therethrough, with pairs of optical fibers positioned in orthogonally located V-grooves. Upon the application of an external force, the fibers are moved into the remaining, vacant V-grooves formed by the diamond-shaped opening. In a preferred embodiment, a (2.times.2) switch is magnetically activated.
摘要:
A given testing substrate for fast-testing many integrated-circuit electronic devices, one after the other, has a set of mutually insulated collated wiring areas that can be aligned with solder-bump I/O pads of the electronic devices. At the surface of each of the corrugated areas is located a layer that is an electrically conductive durable oxide, or that is itself durable, electrically conductive, and non-oxidizable. During testing, the solder-bump I/O pads of the electronic device being tested are aligned with and pressed against the corrugated wiring areas of the given substrate. Alternatively, the electronic devices being of the electrically programmable variety, such as EPROMs, programming voltages can be delivered to each of the devices, one after the other, through the corrugated wiring areas of a single substrate.
摘要:
In the interest of enhanced yield in the manufacture of "wafer-scale" integrated circuits an assembly of integrated circuit chips is made by placing chips on a substrate. Chips have beveled edges as produced by crystallographically anisotropic chemical etching, and the substrate has wells, grooves, or openings having sloping walls. Chips are positioned on the substrate by bringing sloping walls and beveled edges in juxtaposition, and circuitry on chips is connected to circuitry on the substrate.
摘要:
A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.
摘要:
A method for enhancing linewidth control during the patterning of a substrate with a resist is disclosed. Resists used in the invention have chemically separated structures characterized by two types of regions of different chemical composition, which different types of regions are interspersed among each other. Because the resists used in the present invention have chemically separated structures, anisotropic wet development of these resists is achievable with an appropriate bicomponent wet developer. Consequently, after exposure, the image formed in a thin, upper layer of the resist is transferred with vertical walls through the thickness of the resist.
摘要:
A method for bonding one body to another, such as a laser device to a submount, uses a metallic layer composed of a Group VB metal, such as niobium, sandwiched between a non-metallic layer and solder layer formed by an approximate Au-Sn eutectic layer. Advantageously the Group VB layer is formed at a submount temperature of less than approximately 201.degree. C., advantageously less than approximately 125.degree. C., and preferably less than approximately 101.degree. C.--advantageously to a thickness in the approximate range 0.05 .mu.m to 0.2 .mu.m, or even thinner if pinholes do not develop. The non-metallic layer is located on one of the bodies, and the other body has a metallic coating advantageously capped with an Au layer.