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    SEMICONDUCTOR DEVICE AND METHOD
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD 有权
    半导体器件和方法

    公开(公告)号：US20110095364A1

    公开(公告)日：2011-04-28

    申请号：US12984910

    申请日：2011-01-05

    Applicant: Matthias Stecher ,  Tobias Smorodin

    Inventor： Matthias Stecher ,  Tobias Smorodin

    IPC: H01L29/78 ,  H01L23/522 ,  H01L21/336

    CPC classification number: H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    Abstract: A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    Abstract translation: 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    Semiconductor device and method
    2.
    发明授权
    Semiconductor device and method 有权
    半导体器件及方法

    公开(公告)号：US07888794B2

    公开(公告)日：2011-02-15

    申请号：US12032760

    申请日：2008-02-18

    Applicant: Matthias Stecher ,  Tobias Smorodin

    Inventor： Matthias Stecher ,  Tobias Smorodin

    IPC: H01L21/00 ,  H01L23/34

    CPC classification number: H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    Abstract: A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    Abstract translation: 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    Power device
    3.
    发明授权
    Power device 有权
    电源设备

    公开(公告)号：US07960239B2

    公开(公告)日：2011-06-14

    申请号：US11870739

    申请日：2007-10-11

    Applicant: Matthias Stecher ,  Tobias Smorodin

    Inventor： Matthias Stecher ,  Tobias Smorodin

    IPC: H01L29/66

    CPC classification number: H01L29/7802 ,  H01L29/41725 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7809 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A power device with improved reliability and a method for producing the same is disclosed. One embodiment provides an active area having an electrical power dissipation characteristic, a metallization layer portion configured with respect to the active area so that the dissipation characteristic of the active area results in heating the metallization layer portion, the metallization layer portion being formed as a connected region. The metallization layer portion has at least one hole, fully extending through the metal layer and having a dielectric. The at least one hole is arranged so that each location of the metal layer portion is connected electrically to each other location via the metallization material of the metal layer portion.

    Abstract translation: 公开了一种具有可靠性提高的功率器件及其制造方法。 一个实施例提供了具有电功率耗散特性的有源区域，相对于有源区域配置的金属化层部分，使得有源区域的耗散特性导致加热金属化层部分，金属化层部分形成为连接 地区。 金属化层部分具有完全延伸穿过金属层并具有电介质的至少一个孔。 至少一个孔布置成使得金属层部分的每个位置通过金属层部分的金属化材料电连接到彼此的位置。

    Semiconductor device and method
    4.
    发明授权
    Semiconductor device and method 有权
    半导体器件及方法

    公开(公告)号：US08330269B2

    公开(公告)日：2012-12-11

    申请号：US12984910

    申请日：2011-01-05

    Applicant: Matthias Stecher ,  Tobias Smorodin

    Inventor： Matthias Stecher ,  Tobias Smorodin

    IPC: H01L21/00 ,  H01L23/34

    CPC classification number: H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    Abstract: A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    Abstract translation: 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    SEMICONDUCTOR DEVICE AND METHOD
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD 有权
    半导体器件和方法

    公开(公告)号：US20090206420A1

    公开(公告)日：2009-08-20

    申请号：US12032760

    申请日：2008-02-18

    Applicant: Matthias Stecher ,  Tobias Smorodin

    Inventor： Matthias Stecher ,  Tobias Smorodin

    IPC: H01L27/06 ,  H01L21/8234

    CPC classification number: H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    Abstract: A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    Abstract translation: 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    Method for Producing a Conductor Line
    6.
    发明申请
    Method for Producing a Conductor Line 有权
    生产导线的方法

    公开(公告)号：US20130280879A1

    公开(公告)日：2013-10-24

    申请号：US13452044

    申请日：2012-04-20

    Applicant: Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

    Inventor： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

    IPC: H01L21/02

    CPC classification number: H01L21/76804 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/322 ,  H01L21/44 ,  H01L21/743 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

    Abstract translation: 公开了一种用于制造半导体部件的圆形导线的方法。 在该方法中，提供部分完成的半导体部件。 部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。 还提供了一种蚀刻剂。 在顶侧设置介电层。 介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。 随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。 然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。 通过用导电材料填充加宽的沟槽，形成导体线。

    Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said method
    7.
    发明授权
    Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said method 有权
    用于制造石英玻璃的圆柱形光学部件的方法和通过所述方法获得的光学活性部件

    公开(公告)号：US08509269B2

    公开(公告)日：2013-08-13

    申请号：US12998968

    申请日：2009-12-02

    Applicant: Peter Bauer ,  Karsten Braeuer ,  Marco Flach ,  Andreas Langner ,  Richard Schmidt ,  Clemens Schmitt ,  Gerhard Schoetz ,  Matthias Stecher

    Inventor： Peter Bauer ,  Karsten Braeuer ,  Marco Flach ,  Andreas Langner ,  Richard Schmidt ,  Clemens Schmitt ,  Gerhard Schoetz ,  Matthias Stecher

    IPC: H01S3/30

    CPC classification number: H01S3/0602 ,  C03B23/207 ,  C03B37/01245 ,  C03B2201/12 ,  C03B2203/02 ,  C03B2203/18 ,  C03B2203/34 ,  H01S3/063 ,  H01S3/06708 ,  H01S3/06745 ,  H01S3/094003 ,  H01S3/094007 ,  H01S3/1603 ,  H01S3/176

    Abstract: Cylindrical optical components of quartz glass are known, which have an inner zone made of an inner zone glass, which extends in the direction of the longitudinal axis and is surrounded by a jacket zone made of a jacket zone glass, the average wall thickness thereof varying at least over a part of its length in the direction of the longitudinal axis of the component. The aim of the invention is to provide a method that allows a simple and cost-effective production of such an optical component from quartz glass. A method is proposed according to the invention, comprising the following method steps: (a) providing a first parison made of an inner zone glass, which has a first contact surface on the end face, said contact surface having a conical external contour; (b) providing a second parison from the jacket zone glass; (c) embedding the contact surface with a conical external contour into the jacket zone glass and welding the contact surface to the jacket zone glass, thereby forming a composite parison which has a cone-shaped inner zone area of inner zone glass in a contact area, said inner zone area being surrounded by a jacket zone area having the shape of an inner cone; and (d) elongation of the composite parison to form the optical component or a preproduct of the component.

    Abstract translation: 石英玻璃的圆柱形光学部件是已知的，其具有由内部区域玻璃制成的内部区域，该内部区域在纵向轴线的方向上延伸并被由护套区域玻璃制成的护套区域围绕，其平均壁厚度变化 至少在部件的纵向轴线方向上的长度的一部分上。 本发明的目的是提供一种允许从石英玻璃简单且成本有效地生产这种光学部件的方法。 根据本发明提出了一种方法，包括以下方法步骤：（a）提供由内区玻璃制成的第一型坯，其在端面具有第一接触表面，所述接触表面具有锥形外轮廓; （b）从夹克区玻璃提供第二型坯; （c）将具有锥形外部轮廓的接触表面嵌入夹套区玻璃中并将接触表面焊接到护套区域玻璃上，由此形成复合型坯，其在接触区域中具有内部区域玻璃的锥形内部区域 所述内区域由具有内锥形状的护套区域区域包围; 和（d）复合型坯的伸长以形成光学部件或部件的前产物。

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