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1.发明申请公开(公告)号：US20080093969A1
公开(公告)日：2008-04-24
申请号：US11575080
申请日：2005-09-12
CPC分类号： C03C17/007 , C03C17/005 , C03C17/23 , C03C2217/475 , C03C2217/485 , H01J61/34 , H01J61/35 , H01J61/40 , H01K1/18 , H01K1/32 , H01K1/46 , H01K3/005 , Y10T428/26
摘要： The present invention relates to a light-transmitting substrate (1) which is at least provided with a light-absorbing coating (3). The light-absorbing coating comprises stabilized pigments which are incorporated in a sol-gel matrix. The light absorbing coating comprises silica particles having a size between 5 and 100 nanometers and alumina particles having a size between 5 and 50 nanometers. The total volume concentration of pigments, silica and alumina particles in the light-absorbing coating is between 20 and 65 percent. The volume concentration of silica particles is between 5 and 40 percent and the volume concentration of alumina particles between 1 and 15 percent.
摘要翻译： 本发明涉及至少设有吸光涂层（3）的透光基板（1）。 光吸收涂层包括掺入溶胶 - 凝胶基质中的稳定的颜料。 光吸收涂层包括尺寸在5和100纳米之间的二氧化硅颗粒和尺寸在5和50纳米之间的氧化铝颗粒。 光吸收涂层中的颜料，二氧化硅和氧化铝颗粒的总体积浓度为20-65％。 二氧化硅颗粒的体积浓度在5％至40％之间，氧化铝颗粒的体积浓度在1％和15％之间。
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公开(公告)号：US20050263503A1
公开(公告)日：2005-12-01
申请号：US10524982
申请日：2003-07-18
申请人： Rudolf Brzesowsky , Abraham Balkenende , Raymond Gijsbertus Van Agthoven , Petrus Timmermans , Nicolaas Willard
发明人： Rudolf Brzesowsky , Abraham Balkenende , Raymond Gijsbertus Van Agthoven , Petrus Timmermans , Nicolaas Willard
IPC分类号： B23K26/38 , B23K26/073 , B23K26/14 , B23K26/40 , B28D5/00 , C03B33/09 , C03B33/095 , B26F3/16
CPC分类号： B23K26/073 , B23K26/146 , B23K26/40 , B23K2101/40 , B23K2103/50 , B23K2103/52 , B28D5/0011 , C03B33/091 , Y10T225/12 , Y10T225/304
摘要： The invention relates to a method of breaking a substrate of a brittle material, the method comprising the steps of providing a substrate (1) of a brittle material, heating the substrate with a laser beam (3) to create a heated spot on the substrate, moving the laser beam and the substrate with respect to each other to create a line of heated spots on the substrate (2), cooling the heated spots on the substrate by locally applying a cooling medium (4) behind the heated spots such that a micro-crack is propagated in the line of heated spots, and breaking the substrate along the line of the propagated micro-cracks by applying a mechanical force on the substrate wherein, the cooling medium comprises an aqueous surfactant solution. The surfactants will connect to the broken siloxane bonds inside the surface cracks. Then recombination and healing of the broken siloxane bonds will not occur and the required breaking load will remain constant over time.
摘要翻译： 本发明涉及一种破碎脆性材料的基材的方法，所述方法包括以下步骤：提供脆性材料的基材（1），用激光束（3）加热基材以在基材上产生加热点 相对于彼此移动激光束和衬底以在衬底（2）上产生一线加热点，通过在加热点之后局部施加冷却介质（4）来冷却衬底上的加热点，使得 微裂纹在加热点的线中传播，并且通过在基底上施加机械力来破坏基底，沿着传播的微裂纹的线，其中冷却介质包含表面活性剂水溶液。 表面活性剂将连接到表面裂纹内的破裂的硅氧烷键。 然后，破裂的硅氧烷键的复合和愈合将不会发生，并且所需的断裂载荷随时间保持恒定。
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公开(公告)号：US20070120254A1
公开(公告)日：2007-05-31
申请号：US10584038
申请日：2004-12-20
申请人： Godefridus Hurkx , Prabhat Agarwal , Abraham Balkenende , Petrus Hubertus Magnee , Melanie Wagemans , Erik Petrus Antonius Bakkers , Erwin Hijzen
发明人： Godefridus Hurkx , Prabhat Agarwal , Abraham Balkenende , Petrus Hubertus Magnee , Melanie Wagemans , Erik Petrus Antonius Bakkers , Erwin Hijzen
IPC分类号： H01L23/48
CPC分类号： H01L29/8611 , B82Y10/00 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L29/66136 , H01L29/66219 , H01L2924/0002 , H01L2924/00
摘要： An electric device is disclosed comprising a pn-heterojunction (4) formed by a nanowire (3) of 111-V semiconductor material and a semiconductor body (1) comprising a group IV semiconductor material. The nanowire (3) is positioned in direct contact with the surface (2) of the semiconductor body (1) and has a first conductivity type, the semiconductor body (1) has a second conductivity type opposite to the first conductivity type, the nanowire (3) forming with the semiconductor body (1) a pn-heterojunction (4). The nanowire of III-V semiconductor material can be used as a diffusion source (5) of dopant atoms into the semiconductor body. The diffused group III atoms and/or the group V atoms from the III-V material are the dopant atoms forming a region (6) in the semiconductor body in direct contact with the nanowire (3).
摘要翻译： 公开了一种电子器件，其包括由111-V族半导体材料的纳米线（3）和包含IV族半导体材料的半导体本体（1）形成的pn异质结（4）。 纳米线（3）与半导体本体（1）的表面（2）直接接触并且具有第一导电类型，半导体本体（1）具有与第一导电类型相反的第二导电类型，纳米线 （3）与半导体本体（1）形成pn异质结（4）。 III-V族半导体材料的纳米线可以用作半导体本体中掺杂剂原子的扩散源（5）。 来自III-V材料的扩散的III族原子和/或V族原子是在半导体本体中与纳米线（3）直接接触形成区域（6）的掺杂剂原子。
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公开(公告)号：US20070037411A1
公开(公告)日：2007-02-15
申请号：US11583276
申请日：2006-10-18
申请人： Abraham Balkenende , Femke De Theije , Jan Kriege
发明人： Abraham Balkenende , Femke De Theije , Jan Kriege
IPC分类号： H01L21/4757
CPC分类号： H01L21/02126 , C01B37/02 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3121 , H01L21/31695
摘要： The electronic device with a layer of mesoporous silica can be obtained by applying a composition comprising alkoxysilane, a surfactant and a solvent onto a substrate, and by subsequently removing the surfactant and the solvent. The customary dehydroxylation treatment is not necessary if the composition contains a mixture of tetra-alkoxysilane, particularly teatraethoxyorthosilicate (TEOS), and an alkyl-substituted alkoxysilane, particularly a phenyl-substituted, methyl-substituted or ethyl-substituted trialkoxysilane. If both silanes are present in a molar ratio of approximately 1:1, a layer with a dielectric constant of 2.5 or less is obtained.
摘要翻译： 具有介孔二氧化硅层的电子器件可以通过将包含烷氧基硅烷，表面活性剂和溶剂的组合物施加到基材上，并随后除去表面活性剂和溶剂来获得。 如果组合物含有四烷氧基硅烷，特别是原硅酸甲酯（TEOS）和烷基取代的烷氧基硅烷，特别是苯基取代的甲基取代或乙基取代的三烷氧基硅烷的混合物，则常规的脱羟基化处理是不必要的。 如果两种硅烷以约1:1的摩尔比存在，则获得介电常数为2.5或更小的层。
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公开(公告)号：US20080029909A1
公开(公告)日：2008-02-07
申请号：US11629657
申请日：2005-06-07
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/0237 , H01L21/02458 , H01L21/02532 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/267 , H01L29/66666 , H01L29/78642 , H01L29/78681 , H01L29/78696 , H01L29/861 , H01L29/872 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2924/0002 , Y10S977/70 , Y10S977/701 , Y10S977/707 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/723 , Y10S977/742 , Y10S977/762 , Y10S977/938 , H01L2924/00
摘要： Semiconductor devices are fabricated using nanowires 16. A conductive gate 22 may be used to control conduction along the nanowires 16, in which case one of the contacts is a drain 12 and the other a source 18. The nanowires 16 may be grown in a trench or through-hole 8 in a substrate 2 or in particular in epilayer 3 on substrate 2. The gate 22 may be provided only at one end of the nanowires 16. The nanowires 16 can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate 22 and between the gate 22 and the base of the trench.
摘要翻译： 使用纳米线16制造半导体器件。 可以使用导电栅极22来控制沿着纳米线16的导通，在这种情况下，一个触点是漏极12，另一个是源极18。 纳米线16可以在衬底2中的沟槽或通孔8中生长，或特别是在衬底2上的外延层3中生长。 栅极22可以仅设置在纳米线16的一端。 纳米线16沿其长度可以是相同的材料; 可以使用不同的材料，特别是与栅极22相邻并且在栅极22和沟槽的基底之间的不同材料。
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6.发明申请Nanostructure, electronic device having such nanostructure and method of preparing nanostructures 审中-公开纳米结构，具有这种纳米结构的电子器件和制备纳米结构的方法公开(公告)号：US20060022191A1
公开(公告)日：2006-02-02
申请号：US10533509
申请日：2003-10-23
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B29/605 , H01L21/02381 , H01L21/02543 , H01L21/02606 , H01L21/0262 , H01L21/02653 , H01L33/18 , H01L51/0048 , H01L51/0052
摘要： The compound nanotubes of InP or another II-VI or III-V material show a very large blueshift. Thus, devices with photoluminescent and electroluminescent effects in the visible range of the electromagnetic spectrum are provided by the inclusion of such nanotubes.
摘要翻译： InP或其他II-VI或III-V材料的复合纳米管显示出非常大的蓝移。 因此，通过纳入这种纳米管来提供在电磁光谱的可见范围内具有光致发光和电致发光效应的装置。
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公开(公告)号：US20070262397A1
公开(公告)日：2007-11-15
申请号：US11632738
申请日：2005-07-12
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/78 , B82Y10/00 , B82Y40/00 , H01L29/0665 , H01L29/0673 , H01L29/20 , H01L29/76 , Y10S438/962 , Y10S977/762 , Y10S977/818 , Y10S977/938
摘要： A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.
摘要翻译： 晶体管器件由具有源极区，漏极区和源极和漏极区之间的沟道区的连续线性纳米结构形成。 源极（20）和漏极（26）区域由纳米线形成，沟道区域（24）呈纳米管形式。 绝缘栅极（32）设置成邻近沟道区（24），用于控制源极和漏极区之间的沟道区。
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公开(公告)号：US20060091810A1
公开(公告)日：2006-05-04
申请号：US10530496
申请日：2003-10-02
IPC分类号： H01J61/35
CPC分类号： C03C17/005 , C03C17/007 , C03C17/009 , G02B5/206 , G02B5/22
摘要： Disclosed is a light-transmitting substrate that is at least partly provided with a light-absorbing coating. Said coating comprises silver or gold particles that are incorporated in a sol-gel matrix. In order to improve the transmittance in red and to reduce the amount of silver and gold particles, a blue-absorbing compound is added to the coating. Furthermore, an electric lamp is disclosed, said lamp comprising a light-transmitting lamp vessel that accommodates a light source. Said lamp vessel comprises the above light-transmitting substrate. Moreover, a light-absorbing coating is disclosed.
摘要翻译： 公开了至少部分设置有光吸收涂层的透光性基板。 所述涂层包含掺入溶胶 - 凝胶基质中的银或金颗粒。 为了提高红色的透射率和减少银和金颗粒的量，将蓝色吸收化合物加入到涂层中。 此外，公开了一种电灯，所述灯包括容纳光源的透光灯容器。 所述灯容器包括上述透光基板。 此外，公开了一种光吸收涂层。
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