Microelectronic die packages with leadframes, including leadframe-based interposer for stacked die packages, and associated systems and methods
    1.
    发明授权
    Microelectronic die packages with leadframes, including leadframe-based interposer for stacked die packages, and associated systems and methods 有权
    具有引线框架的微电子管芯封装,包括用于堆叠管芯封装的基于引线框架的插入器,以及相关系统和方法

    公开(公告)号:US08525320B2

    公开(公告)日:2013-09-03

    申请号:US13110060

    申请日:2011-05-18

    IPC分类号: H01L23/02

    摘要: Microelectronic die packages, stacked systems of die packages, and methods of manufacturing thereof are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes stacking a first die package having a first dielectric casing on top of a second die package having a second dielectric casing, aligning first metal leads at a lateral surface of the first casing with second metal leads at a second lateral surface of the second casing, and forming metal solder connectors that couple individual first leads to individual second leads. In another embodiment, the method of manufacturing the microelectronic device may further include forming the connectors by applying metal solder to a portion of the first lateral surface, to a portion of the second lateral surface, and across a gap between the first die package and the second die package so that the connectors are formed by the metal solder wetting to the individual first leads and the individual second leads.

    摘要翻译: 本文公开了微电子管芯封装,管芯封装的堆叠系统及其制造方法。 在一个实施例中,一种制造微电子器件的方法包括将具有第一介电壳体的第一管芯封装堆叠在具有第二介电壳体的第二管芯封装的顶部上,使第一壳体的侧表面上的第一金属引线与第二金属 在第二壳体的第二侧表面处引导,并且形成将单独的第一引线连接到单独的第二引线的金属焊料连接器。 在另一个实施例中,制造微电子器件的方法还可以包括通过将金属焊料施加到第一侧表面的一部分,第二侧表面的一部分,以及跨越第一管芯封装和第二侧表面之间的间隙来形成连接器 第二管芯封装,使得连接器由金属焊料形成,其润湿到各个第一引线和各个第二引线。

    Methods and apparatus for testing and burn-in of semiconductor devices
    2.
    发明授权
    Methods and apparatus for testing and burn-in of semiconductor devices 失效
    半导体器件测试和老化的方法和装置

    公开(公告)号:US06856155B2

    公开(公告)日:2005-02-15

    申请号:US10266140

    申请日:2002-10-07

    IPC分类号: G01R31/28 G01R31/02

    CPC分类号: G01R31/2863

    摘要: A testing scheme for ball-grid array devices of different sizes where the same ball-grid pattern may be tested using the same set of test adapters. A testing scheme includes providing a plurality of devices having a predetermined pattern of solder balls attached, providing a plurality of adapters secured to a test board, each of the adapters including a plurality of test contacts arranged in a pattern corresponding to the predetermined pattern of solder balls, removably attaching the plurality of devices to a device holding apparatus such that the predetermined pattern of solder balls on the devices corresponds to the predetermined pattern of test contacts on the plurality of adapters, then positioning the device holding apparatus to bring the plurality of solder balls in contact with the plurality of test contacts.

    摘要翻译: 不同尺寸的球栅阵列器件的测试方案,可以使用相同的一组测试适配器测试相同的球栅图案。 一种测试方案包括提供多个具有附着的焊球预定图案的装置,提供固定在测试板上的多个适配器,每个适配器包括以对应于预定图案焊料的图案布置的多个测试触点 球,可移除地将多个装置附接到装置保持装置,使得装置上的预定图案的焊球对应于多个适配器上的预定图案的试验接触,然后定位装置保持装置以使多个焊料 与多个测试触点接触的球。

    Castellated chip-scale packages and methods for fabricating the same
    6.
    发明授权
    Castellated chip-scale packages and methods for fabricating the same 有权
    Castellate芯片级封装及其制造方法

    公开(公告)号:US07208335B2

    公开(公告)日:2007-04-24

    申请号:US10717421

    申请日:2003-11-19

    IPC分类号: H01L21/00 H01L21/30

    摘要: A method for fabricating a chip-scale package includes securing a device substrate that carries at least two adjacent semiconductor devices to a sacrificial substrate. The sacrificial substrate may include conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. The device substrate is then severed along each street and the newly formed peripheral edge of each semiconductor device coated with dielectric material. If the sacrificial substrate includes conductive elements, they may be exposed between adjacent semiconductor devices and subsequently serve as lower sections of contacts. Peripheral sections of contacts are formed on the peripheral edge. Upper sections of the contacts may also be formed over the active surfaces of the semiconductor devices. Once the contacts are formed, the sacrificial substrate is substantially removed from the back sides of the semiconductor devices.

    摘要翻译: 一种用于制造芯片级封装件的方法包括将承载至少两个相邻半导体器件的器件衬底固定到牺牲衬底。 牺牲衬底可以包括在其表面上的导电元件,其位于沿着设备衬底上每个相邻的一对半导体器件之间的街道对齐。 然后沿着每个街道切割设备基板,并且每个半导体器件的新形成的外围边缘被涂覆有电介质材料。 如果牺牲衬底包括导电元件,则它们可以在相邻的半导体器件之间暴露,并且随后用作接触的下部。 触点的外围部分形成在周边。 触点的上部部分也可以形成在半导体器件的有效表面上。 一旦接触形成,牺牲基底基本上从半导体器件的背面去除。