摘要:
Solder used for flip chip bonding inside a semiconductor package was a Sn—Pb solder such as a Pb-5Sn composition. Lead-free solders which have been studied are hard and easily form intermetallic compounds with Sn, so they were not suitable for a flip chip connection structure inside a semiconductor package, which requires stress relaxation properties. This problem is eliminated by a flip chip connection structure inside a semiconductor package using a lead-free solder which is characterized by consisting essentially of 0.01-0.5 mass percent of Ni and a remainder of Sn. 0.3-0.9 mass percent of Cu and 0.001-0.01 mass percent of P may be added to this solder composition.
摘要:
Solder used for flip chip bonding inside a semiconductor package was a Sn—Pb solder such as a Pb-5Sn composition. Lead-free solders which have been studied are hard and easily form intermetallic compounds with Sn, so they were not suitable for a flip chip connection structure inside a semiconductor package, which requires stress relaxation properties. This problem is eliminated by a flip chip connection structure inside a semiconductor package using a lead-free solder which is characterized by consisting essentially of 0.01-0.5 mass percent of Ni and a remainder of Sn. 0.3-0.9 mass percent of Cu and 0.001-0.01 mass percent of P may be added to this solder composition.
摘要:
By using a solder alloy consisting essentially of 0.2-1.2 mass % of Ag, 0.6-0.9 mass % of Cu, 1.2-3.0 mass % of Bi, 0.02-1.0 mass % of Sb, 0.01-2.0 mass % of In, and a remainder of Sn, it is possible to obtain portable devices having excellent resistance to drop impact and excellent heat cycle properties without developing thermal fatigue even when used in a high-temperature environment such as inside a vehicle heated by the sun or in a low-temperature environment such as outdoors in snowy weather.
摘要:
By using a solder alloy consisting essentially of 0.2-1.2 mass % of Ag, 0.6-0.9 mass % of Cu, 1.2-3.0 mass % of Bi, 0.02-1.0 mass % of Sb, 0.01-2.0 mass % of In, and a remainder of Sn, it is possible to obtain portable devices having excellent resistance to drop impact and excellent heat cycle properties without developing thermal fatigue even when used in a high-temperature environment such as inside a vehicle heated by the sun or in a low-temperature environment such as outdoors in snowy weather.
摘要:
A catadioptric optical system of the present invention includes a catadioptric unit configured to condense light fluxes from an object and to form an intermediate image of the object, a field lens disposed at a position where the intermediate image are formed, and a dioptric unit configured to form the intermediate image on an image surface, and when νcat denotes a smallest Abbe number in Abbe numbers of materials of the first and second optical elements configuring the catadioptric unit and νdio denotes a smallest Abbe number in Abbe numbers of materials of a plurality of dioptric optical elements configuring the dioptric unit, νdio
摘要:
The invention generally relates to blocked prepolymers. More specifically, the invention generally relates to plastisol compositions comprising the blocked prepolymers. The blocked prepolymer is the reaction product of at least an isocyanate terminated prepolymer and a blocking agent, wherein the blocking agent is a nitrogen containing blocking agent. The isocyanate terminated prepolymer is the reaction product of at least one or more polyols comprising at least one polyol having an amine initiator and a stoichiometric excess of one or more organic polyisocyanate components.
摘要:
A catadioptric optical system of the present invention includes a catadioptric unit configured to condense light fluxes from an object and to form an intermediate image of the object, a field lens disposed at a position where the intermediate image are formed, and a dioptric unit configured to form the intermediate image on an image surface, and when νcat denotes a smallest Abbe number in Abbe numbers of materials of the first and second optical elements configuring the catadioptric unit and νdio denotes a smallest Abbe number in Abbe numbers of materials of a plurality of dioptric optical elements configuring the dioptric unit, νdio
摘要:
A massage machine using a small size and high torque brushless DC motor includes a driving unit moved up and down along guide rails of a chair and a first motor for moving the driving unit up and down. A pair of treatment head bases are driven reciprocally in opposite directions to each other; and a second motor reciprocally drives the treatment head bases in opposite directions to each other. Treatment heads are respectively supported by the treatment head bases; and a third motor drives the treatment heads in a plane substantially perpendicular to a backrest. A control circuit drives the respective motors respectively independently of one another. Each motor is a brushless motor. A control circuit corrects, corresponding to a load imposed on the brushless DC motor, a waveform of a drive signal applied to a winding of the brushless DC motor so as to allow a current flowing through the winding of the brushless DC motor to have a substantially sinusoidal waveform making it possible to reduce discomfort due to motor noise, and to accurately control the motor rotation speed.
摘要:
There is provided a substrate processing apparatus, including: a substrate holder that holds a plurality of substrates (wafers) in a state of being arranged in a lateral direction (approximately in a horizontal direction) approximately in a vertical posture; a processing tube that houses the substrate holder; a throat side sealing part (throat side mechanical flange part) that air-tightly closes an opening part of the processing tube; a rotation part that rotates the substrate holder in a peripheral direction of the substrates, with an arrangement direction (a direction in which the substrates are held) of the plurality of substrates as a rotation axis, wherein the substrate holder includes a fixing part (movable holding part) and a fixture holding part for fixing the substrates approximately in a vertical posture.
摘要:
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.