Conducting paste for device level interconnects
    4.
    发明授权
    Conducting paste for device level interconnects 有权
    用于器件级互连的导电膏

    公开(公告)号:US08685284B2

    公开(公告)日:2014-04-01

    申请号:US12884657

    申请日:2010-09-17

    IPC分类号: H01B1/00 H01B1/22 H01B1/02

    摘要: A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.

    摘要翻译: 导电糊和形成用于器件级互连的糊的方法。 导电浆料含有80-95%范围内的金属负载,可用于制造五微米器件级互连。 通过混合两种不同的导电浆料制成导电糊料,即使在最终固化后,每个糊料仍将其微量级独立富含区域保持在混合糊料中。 一种糊状物含有至少一种低熔点合金,另一种糊状物含有贵金属填料如金或银薄片。 通常,小于5微米的平均片尺寸适用于五微米互连。 然而,对于5微米互连,优选1微米或更小的银薄片和LMP混合物。 最终混合物中基于LMP的糊剂的量优选为20-50重量%。 纳米微膏实施例显示良好的电收率(81%)和低接触电阻。

    CONDUCTING PASTE FOR DEVICE LEVEL INTERCONNECTS
    5.
    发明申请
    CONDUCTING PASTE FOR DEVICE LEVEL INTERCONNECTS 有权
    用于设备级互连的导电胶

    公开(公告)号:US20120069531A1

    公开(公告)日:2012-03-22

    申请号:US12884657

    申请日:2010-09-17

    摘要: A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.

    摘要翻译: 导电糊和形成用于器件级互连的糊的方法。 导电浆料含有80-95%范围内的金属负载,可用于制造五微米器件级互连。 通过混合两种不同的导电浆料制成导电糊料,即使在最终固化后,每个糊料仍将其微量级独立富含区域保持在混合糊料中。 一种糊状物含有至少一种低熔点合金,另一种糊状物含有贵金属填料如金或银薄片。 通常,小于5微米的平均片尺寸适用于五微米互连。 然而,对于5微米互连,优选1微米或更小的银薄片和LMP混合物。 最终混合物中基于LMP的糊剂的量优选为20-50重量%。 纳米微膏实施例显示良好的电收率(81%)和低接触电阻。

    Capacitive substrate
    6.
    发明授权
    Capacitive substrate 失效
    电容衬底

    公开(公告)号:US07897877B2

    公开(公告)日:2011-03-01

    申请号:US11438424

    申请日:2006-05-23

    IPC分类号: H05K1/16

    摘要: A capacitive substrate and method of making same in which first and second glass layers are used. A first conductor is formed on a first of the glass layers and a capacitive dielectric material is positioned over the conductor. The second conductor is then positioned on the capacitive dielectric and the second glass layer positioned over the second conductor. Conductive thru-holes are formed to couple to the first and second conductors, respectively, such that the conductors and capacitive dielectric material form a capacitor when the capacitive substrate is in operation.

    摘要翻译: 电容性基板及其制造方法,其中使用第一和第二玻璃层。 第一导体形成在第一玻璃层上,并且电容电介质材料位于导体上方。 然后将第二导体定位在电容电介质上,并且第二玻璃层位于第二导体上。 形成导电通孔以分别耦合到第一和第二导体,使得当电容基板工作时,导体和电容电介质材料形成电容器。