Method for manufacturing flexible semiconductor device
    5.
    发明授权
    Method for manufacturing flexible semiconductor device 有权
    柔性半导体器件的制造方法

    公开(公告)号:US08435842B2

    公开(公告)日:2013-05-07

    申请号:US12681399

    申请日:2009-07-30

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.

    摘要翻译: 一种制造柔性半导体器件的方法包括:(i)在树脂膜的上表面上形成绝缘膜,(ii)在树脂膜的上表面上形成提取电极的图案,(iii)形成半导体层 以使得半导体层与提取电极的图案接触的方式在绝缘膜上,以及(iv)在树脂膜的上表面上形成密封树脂层,使得密封树脂层覆盖 半导体层和提取电极的图案,其中通过印刷方法进行上述步骤(i)至(iv)中的步骤中的至少一个。 利用该制造方法,可以通过简单的印刷工艺形成各种层,而不使用真空工艺,光刻等。

    Flexible semiconductor device and method for manufacturing same
    6.
    发明授权
    Flexible semiconductor device and method for manufacturing same 有权
    柔性半导体器件及其制造方法

    公开(公告)号:US08343822B2

    公开(公告)日:2013-01-01

    申请号:US12681445

    申请日:2009-07-30

    IPC分类号: H01L21/84 H01L21/00

    摘要: A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

    摘要翻译: 一种制造柔性半导体器件的方法包括:(i)在金属箔的上表面上形成绝缘膜,(ii)在金属箔的上表面上形成引出电极图案,(iii)在金属箔的上表面上形成半导体层 绝缘膜,使得半导体层与引出电极图案接触,(iv)在金属箔的上表面上形成密封树脂层,使得密封树脂层覆盖半导体层和引出电极图案,和( v)通过蚀刻金属箔形成电极,金属箔用作绝缘膜的支撑体,引出电极图案,半导体层和形成在(i)至(iv)中的密封树脂层,并用作 (v)中的电极的构成材料。 金属箔不需要剥离,可以使用高温工艺。

    Semiconductor device, semiconductor device manufacturing method and image display device
    7.
    发明授权
    Semiconductor device, semiconductor device manufacturing method and image display device 有权
    半导体器件,半导体器件制造方法和图像显示器件

    公开(公告)号:US08143617B2

    公开(公告)日:2012-03-27

    申请号:US12667297

    申请日:2008-07-01

    摘要: A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.

    摘要翻译: 提供了具有以更高密度设置的半导体元件的半导体器件及其制造方法。 还提供了采用半导体器件的图像显示装置。 半导体器件包括具有通孔的树脂膜; 以及半导体元件,包括设置在通孔的内壁上的栅电极,覆盖通孔内的栅电极的绝缘层,设置在通孔内的绝缘层上的有机半导体,以及源电极和 电极与有机半导体电连接。