公开(公告)号：US20120133042A1

公开(公告)日：2012-05-31

申请号：US13320998

申请日：2009-05-21

申请人： Shintarou Hayashi ,  Mitsuhiko Ueda ,  Yoshiharu Sanagawa ,  Takamasa Sakai

发明人： Shintarou Hayashi ,  Mitsuhiko Ueda ,  Yoshiharu Sanagawa ,  Takamasa Sakai

IPC分类号： H01L23/488 ,  H01L23/48 ,  H01L23/495

CPC分类号： G01P15/123 ,  B81B7/0048 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0842 ,  H01L23/50 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06155 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13191 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13561 ,  H01L2224/1357 ,  H01L2224/13691 ,  H01L2224/14155 ,  H01L2224/14165 ,  H01L2224/14179 ,  H01L2224/16145 ,  H01L2224/1703 ,  H01L2224/29191 ,  H01L2224/321 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81862 ,  H01L2224/83 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2924/0715 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A mounting structure of chip comprises a substrate having a base, a chip on the upper surface of the base, and adhesive agents which bonds the base and the first chip. The adhesive agent is applied to the upper surface of the base. The chip has a rectangular shape to have a width and a length, and is bonded at its lower surface to the base. The adhesive agents comprises the first adhesive agent, the second adhesive agent, and the third adhesive agent which are disposed on the three spots of the upper surface of the base, respectively. The three spots on the base are located on vertexes of a triangle. The first chip is bonded to the base by only the first adhesive agent, the second adhesive agent, and the third adhesive agent.

摘要翻译： 芯片的安装结构包括具有底座，底座上表面上的芯片以及粘接基座和第一芯片的粘接剂的基片。 粘合剂施加到基底的上表面。 芯片具有宽度和长度的矩形形状，并且在其下表面与基底结合。 粘合剂包括分别设置在基底的上表面的三个点上的第一粘合剂，第二粘合剂和第三粘合剂。 基座上的三个点位于三角形的顶点。 第一芯片仅通过第一粘合剂，第二粘合剂和第三粘合剂结合到基底上。

公开(公告)号：US07073521B2

公开(公告)日：2006-07-11

申请号：US10241281

申请日：2002-09-10

申请人： Takamasa Sakai

发明人： Takamasa Sakai

IPC分类号： B08B3/00

CPC分类号： H01L21/68792 ,  H01L21/67051 ,  H01L21/67109 ,  H02K1/16 ,  H02K5/20 ,  H02K7/088 ,  H02K7/14 ,  H02K9/19 ,  H02K17/12 ,  H02K41/025 ,  Y10S134/902

摘要： In a substrate processing apparatus for performing a substrate processing with a substrate being rotated, a ring-shaped motor is provided and a water pipe, a drainpipe and gas supply pipes are connected to a stationary part of the motor covered with a rotating part thereof. A gas from the gas supply pipes is supplied between the stationary part and the rotating part of the motor, thereby making the rotating part rotatable with a mechanism of a static pressure gaseous bearing (and a mechanical rotary). A group of induction coils are provided in a ring shape, and the water pipe and the drainpipe are connected to a duct for cooling water formed in the stationary part along the group of induction coils. This constitution allows removal of heat generated by the group of induction coils, to thereby achieving an adequate high-speed rotation of the substrate.

公开(公告)号：US4803948A

公开(公告)日：1989-02-14

申请号：US36803

申请日：1987-04-10

申请人： Keiji Nakagawa ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Yusuke Muraoka

发明人： Keiji Nakagawa ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Yusuke Muraoka

IPC分类号： H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  H01L21/67109

摘要： A heat processing apparatus for manufacturing semiconductors is constructed such that an airtightly sealing part is provided at the tubular end having equal diameter to that of a main body of the apparatus, a ring shaped packing is wound on the outer circumference of a cylindrical tube adjacent to the end to be pressed between a pair of ring bodies which are formed with tapered edges of opposite inner sides, an inner tube having an equal diameter to that of the tube is connected with the end of the cylindrical tube through a cushioning material, on the outer circumference of the inner tube an outer tube is constructed integrally with one of the ring bodies, opening ends of both the inner and the outer tubes are adapted to be closed with a lid, and to the outer tube there are provided an exhausting tube for exhausting gas in the cylindrical tube and a gas introducing tube which interrupts an open air from the cylindrical tube with the flow of inert gas which flows when the lid is opened, and exhausting holes which connect with the exhausting tube and a plurality lines of gas holes for forming "gas curtain" are provided to the inner tube.

摘要翻译： 构造半导体制造用热处理装置的结构是，在筒状端部设置气密密封部件，其直径与设备主体直径相等，环形填料卷绕在圆筒管的外圆周上 被压在形成有相对内侧的锥形边缘的一对环体之间的端部，具有与管的直径相等的直径的内管通过缓冲材料与圆柱形管的端部连接， 内管的外周，外管与其中一个环体一体地构成，内管和外管两端的开口端适于用盖封闭，并且在外管上设有用于 在圆筒管中排出气体，以及气体导入管，其在盖打开时中断来自圆筒管的开放空气与惰性气体流动 并且，在内管上设置有与排气管连接的排气孔和用于形成“气帘”的多排气孔。

公开(公告)号：US4412906A

公开(公告)日：1983-11-01

申请号：US332996

申请日：1981-12-21

申请人： Yasuhiko Sato ,  Takamasa Sakai ,  Shoichi Minagawa

发明人： Yasuhiko Sato ,  Takamasa Sakai ,  Shoichi Minagawa

IPC分类号： C23C14/34 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C15/00

CPC分类号： H01L21/31 ,  C23C14/3407

摘要： A sputtering apparatus includes a target and a substrate holder respectively supported in a lower portion and an upper portion of a vacuum chamber, a gas jet opening located near the upper surface of the target, and gas withdrawal conduits located near the substrate holder, so that by supplying a gas to the vacuum chamber through the gas jet opening, the gas pressure in the chamber gradually decreases from the region near the target to the region near the substrate holder.

摘要翻译： 溅射装置包括分别支撑在真空室的下部和上部中的靶和衬底保持器，位于靶的上表面附近的气体射流开口和位于衬底保持器附近的气体取出管道，使得 通过通过气体喷射口向真空室供给气体，室内的气体压力从靠近靶的区域逐渐减小到靠近衬底保持器的区域。

公开(公告)号：US4798926A

公开(公告)日：1989-01-17

申请号：US22885

申请日：1987-03-06

申请人： Takamasa Sakai

发明人： Takamasa Sakai

IPC分类号： H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H05B6/02 ,  H05B6/10

CPC分类号： H05B6/105

摘要： Disclosed is a method of heating a semiconductor in a heat treatment apparatus for heating the semiconductor at a high temperature, in which a semiconductor is put in the heat treatment apparatus, and an alternating magnetic field is applied to a low-resistance ferromagnetic substance disposed in the heat treatment apparatus and isolated by a material inert to a required treatment atmosphere in the heat treatment apparatus to generate heat in the low-resistance ferromagnetic substance to thereby carry out heat treatment on the semiconductor. Further disclosed is a susceptor for supporting a semiconductor inertly to a required treatment atmosphere in a heat treatment apparatus, the susceptor being constituted by a material which is inert to the treatment atmosphere in the treatment apparatus and a low-resistance ferromagnetic substance isolated by the inert material from the treatment atmosphere. Preferably, a Curie point of the low-resistance ferromagnetic substance is set in accordance with a temperature at which the semiconductor is heated.

摘要翻译： 公开了一种在热处理设备中加热半导体的方法，该热处理设备用于在半导体放置在热处理设备中的高温下加热半导体，并且将交变磁场施加到设置在 所述热处理装置通过在所述热处理装置中对所需处理气氛无惰性的物质隔离，以在所述低电阻铁磁物质中产生热量，从而对所述半导体进行热处理。 还公开了一种用于在热处理装置中对所需处理气氛进行惰性支撑半导体的感受体，该感受体由对处理装置中的处理气氛呈惰性的材料和由惰性分离的低电阻铁磁性物质构成 材料从治疗气氛。 优选地，根据半导体被加热的温度来设定低电阻铁磁性物质的居里点。

公开(公告)号：US4693208A

公开(公告)日：1987-09-15

申请号：US885697

申请日：1986-07-15

申请人： Takamasa Sakai

发明人： Takamasa Sakai

IPC分类号： H01L21/31 ,  C01B5/00 ,  C23C8/16 ,  F22B1/00

CPC分类号： C23C8/16 ,  C01B5/00 ,  F22B1/00 ,  F22B1/003

摘要： A feeder of oxygen gas containing steam comprising a combustion chamber, an oxygen gas induction tube for inducing oxygen gas to the combustion chamber, a hydrogen gas chamber separated from the combustion chamber by a hydrogen osmotic film between it and the combustion chamber, a hydrogen gas induction chamber which induces the hydrogen gas to the hydrogen gas chamber, an exhaust tube communicated with the hydrogen gas chamber and a heater.

摘要翻译： 包含燃烧室的含氧气体的供给器，用于将氧气引入燃烧室的氧气感应管，通过其与燃烧室之间的氢气渗透膜与燃烧室分离的氢气室，氢气 感应室，其向氢气室引入氢气，与氢气室连通的排气管和加热器。

公开(公告)号：US4529995A

公开(公告)日：1985-07-16

申请号：US397283

申请日：1982-07-12

申请人： Takamasa Sakai ,  Shoichi Minagawa

发明人： Takamasa Sakai ,  Shoichi Minagawa

IPC分类号： H01L29/93

CPC分类号： H01L29/93

摘要： Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.

摘要翻译： 由具有第一导电类型半导体层的半导体衬底，形成在所述第一导电类型半导体层的表面部分中的至少一个第二导电类型半导体区域和用于产生在相对的表面上形成的耗尽层的势垒组成的可变电容器件 到所述第一导电类型半导体层的所述表面部分，其中电容读出部分设置在所述至少一个第二导电类型半导体区域上。 耗尽层控制部分设置在与所述表面部分相对的所述表面上; 并且所述耗尽层控制部分被反向偏置，使得所述耗尽层从所述势垒延伸到所述第一导电类型半导体层和所述至少一个第二导电类型半导体区域之间的接合部分，由此在所述电容读取 - 响应于反向偏置电压的变化。

公开(公告)号：US4357553A

公开(公告)日：1982-11-02

申请号：US177966

申请日：1980-08-14

申请人： Shoichi Minagawa ,  Takamasa Sakai ,  Takeshi Okamoto ,  Morihiro Niimi

发明人： Shoichi Minagawa ,  Takamasa Sakai ,  Takeshi Okamoto ,  Morihiro Niimi

IPC分类号： H03F13/00 ,  H03F7/00

CPC分类号： H03F13/00

摘要： A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.

摘要翻译： 表面声波装置具有由半导体和压电层形成的叠层和局部地设置在半导体和所述压电层的界面部分的耗尽层控制装置，其中在除了 通过向耗尽层控制装置施加DC偏置电压和泵浦电压来控制耗尽层控制装置的耗尽层电容。

公开(公告)号：US07869062B2

公开(公告)日：2011-01-11

申请号：US12007299

申请日：2008-01-09

申请人： Yoshiyuki Nakazawa ,  Takamasa Sakai

发明人： Yoshiyuki Nakazawa ,  Takamasa Sakai

IPC分类号： G01B11/28 ,  G01J4/00

CPC分类号： H01L21/6838 ,  B41J3/4071

摘要： In a substrate supporting apparatus of a surface potential measuring apparatus, a first fluid is ejected around a target region on an upper surface of a substrate from a circular-shaped first porous member of a first fluid ejection part and a second fluid is ejected onto a lower surface of the substrate from a circular-shaped second porous member of a second fluid ejection part which is opposite to the first fluid ejection part. The substrate can be supported and flattened between the first fluid ejection part and the second fluid ejection part. Also, it is possible to keep the distance between the substrate and the first porous member, with a simple construction. As a result, a probe can be positioned above a flatted target region with leaving a predetermined spacing, to perform measurement of a surface potential of the target region on the substrate with high accuracy.

摘要翻译： 在表面电位测量装置的衬底支撑装置中，第一流体从第一流体喷射部件的圆形第一多孔构件在基板的上表面上的目标区域周围喷射，并且将第二流体喷射到 从与第一流体喷射部分相对的第二流体喷射部分的圆形第二多孔部件的下表面。 基板可以在第一流体喷射部分和第二流体喷射部分之间被支撑和平坦化。 此外，可以以简单的结构保持基板和第一多孔构件之间的距离。 结果，探针可以放置在平坦的目标区域之上，留下预定的间隔，以高精度地测量衬底上目标区域的表面电位。

公开(公告)号：US07539097B2

公开(公告)日：2009-05-26

申请号：US11234212

申请日：2005-09-26

申请人： Youichi Ogura ,  Toshihiko Takahashi ,  Teruhiko Izumi ,  Shinichi Konishi ,  Hironori Deguchi ,  Takamasa Sakai

发明人： Youichi Ogura ,  Toshihiko Takahashi ,  Teruhiko Izumi ,  Shinichi Konishi ,  Hironori Deguchi ,  Takamasa Sakai

IPC分类号： G11B20/00

CPC分类号： G11B20/10009 ,  G11B7/131 ,  G11B20/1403 ,  G11B2020/122 ,  G11B2020/1239 ,  G11B2020/1268

摘要： An optical disk device is provided with a first analog-to-digital converter for converting a push-pull signal detected from an optical disc medium into a digital sampling signal according to a sampling clock in the vicinity of a channel frequency. The optical disk device also includes an address polarity information detection circuit for detecting address polarity information from the digital sampling signal, and an address position information detection circuit for detecting address position information from the digital sampling signal while maintaining continuity.

摘要翻译： 光盘装置具有第一模数转换器，用于根据通道频率附近的采样时钟将从光盘介质检测到的推挽信号转换为数字采样信号。 光盘装置还包括用于从数字采样信号检测地址极性信息的地址极性信息检测电路，以及用于在保持连续性的同时从数字采样信号检测地址位置信息的地址位置信息检测电路。