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5368 条记录 (耗时 0.045 秒)

    Photoelectric conversion device and fabrication method thereof
    2.
    发明授权
    Photoelectric conversion device and fabrication method thereof 失效
    光电转换装置及其制造方法

    公开(公告)号：US08704083B2

    公开(公告)日：2014-04-22

    申请号：US13022827

    申请日：2011-02-08

    申请人： Shunpei Yamazaki ,  Kazuo Nishi

    发明人： Shunpei Yamazaki ,  Kazuo Nishi

    IPC分类号： H01L31/075

    CPC分类号： H01L31/182 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/028 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/077 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

    摘要： In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

    摘要翻译： 在通过使用固相生长法添加催化剂元素制造的薄膜光电转换元件中，抑制诸如电流的短路或泄漏的缺陷。 促进硅结晶的催化剂材料选择性地添加到形成在具有一种导电类型的第一硅半导体层上的第二硅半导体层中，第二硅半导体层通过热处理部分结晶，具有导电性的第三硅半导体层 与一种导电类型相反的类型堆叠，并且在不添加催化剂材料的第二硅半导体层中的区域处进行元件隔离，从而防止左催化剂材料再次扩散，并且缺陷如 抑制电流的短路或泄漏。

    Driver circuit and display device
    6.
    发明授权
    Driver circuit and display device 有权

    公开(公告)号：US09842859B2

    公开(公告)日：2017-12-12

    申请号：US12606340

    申请日：2009-10-27

    申请人： Jun Koyama ,  Shunpei Yamazaki

    发明人： Jun Koyama ,  Shunpei Yamazaki

    IPC分类号： G09G5/00 ,  H01L27/12

    CPC分类号： H01L27/1225 ,  H01L27/1248

    摘要： The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.

    Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof
    8.
    发明授权
    Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof 有权

    公开(公告)号：US09722212B2

    公开(公告)日：2017-08-01

    申请号：US13372087

    申请日：2012-02-13

    申请人： Shunpei Yamazaki

    发明人： Shunpei Yamazaki

    IPC分类号： H01L21/84 ,  H01L51/56 ,  H01L27/32

    CPC分类号： H01L51/56 ,  H01L27/3246

    摘要： The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

    Method of forming crystalline oxide semiconductor film
    10.
    发明授权
    Method of forming crystalline oxide semiconductor film 有权
    形成结晶氧化物半导体膜的方法

    公开(公告)号：US09546416B2

    公开(公告)日：2017-01-17

    申请号：US13221140

    申请日：2011-08-30

    申请人： Shunpei Yamazaki

    发明人： Shunpei Yamazaki

    IPC分类号： C30B25/00 ,  C23C14/08 ,  C23C14/54 ,  C23C14/56 ,  C30B29/16 ,  C30B25/10

    CPC分类号： C23C14/08 ,  C23C14/086 ,  C23C14/541 ,  C23C14/564 ,  C30B25/10 ,  C30B25/105 ,  C30B29/16

    摘要： An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical length of 1 nm to 1 μm is heated to a temperature higher than or equal to the second temperature. Here, the first temperature means a temperature at which crystallization occurs with some stimulation, and the second temperature means a temperature at which crystallization occurs spontaneously without any stimulation. Further, the typical length is defined as the square root of a value obtained in such a manner that the area of the part is divided by the circular constant.

    摘要翻译： 形成具有优异结晶度的氧化物半导体膜。 在形成氧化物半导体膜时，作为基板被加热至高于或等于第一温度且低于第二温度的温度时，具有典型长度为1nm至1μm的基板的一部分 被加热到高于或等于第二温度的温度。 这里，第一温度是指在某种刺激下发生结晶的温度，第二温度是指没有任何刺激自发发生结晶的温度。 此外，典型长度被定义为以使得部件的面积除以圆形常数的方式获得的值的平方根。