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    PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20230051881A1

    公开(公告)日：2023-02-16

    申请号：US17401276

    申请日：2021-08-12

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Cheng-Yen Hsieh ,  Chih-Horng Chang ,  Chung-Yu Lu

    IPC分类号： H01L23/38 ,  H01L25/065 ,  H01L23/498 ,  H01L23/48 ,  H01L35/34

    摘要： A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

    Semiconductor structure
    8.
    发明授权
    Semiconductor structure 有权

    公开(公告)号：US11901306B2

    公开(公告)日：2024-02-13

    申请号：US18053957

    申请日：2022-11-09

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chung-Yu Lu ,  Yao-Jen Chang ,  Sao-Ling Chiu

    IPC分类号： H01L23/544 ,  H01L21/308 ,  H01L21/027

    CPC分类号： H01L23/544 ,  H01L21/0274 ,  H01L21/3083 ,  H01L2223/54426

    摘要： Semiconductor structures are provided. A semiconductor structure includes a plurality of product regions over a semiconductor substrate, a plurality of alignment regions over the semiconductor substrate, and a plurality of first features formed in a material layer over the semiconductor substrate. Each of the alignment regions is surrounded by four of the product regions of a group, and each of the first features extends across two adjacent product regions in the group. The product regions are disposed in rows and columns of a first array, and the alignment regions are disposed in rows and columns of a second array, and the first and second arrays have a same center point.

    Semiconductor structure and method for fabricating semiconductor structure
    9.
    发明授权
    Semiconductor structure and method for fabricating semiconductor structure 有权

    公开(公告)号：US11502043B2

    公开(公告)日：2022-11-15

    申请号：US17226366

    申请日：2021-04-09

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chung-Yu Lu ,  Yao-Jen Chang ,  Sao-Ling Chiu

    IPC分类号： H01L23/544 ,  H01L21/308 ,  H01L21/027

    摘要： Method for fabricating a semiconductor structure is provided. First features are formed in a first product region of each die area and in a material layer through a first mask. Second features are formed in a second product region of each die area and in the material layer through a second mask. Third features are formed in a third product region of each die area and in the material layer through a third mask. Fourth features are formed in a fourth product region of each die area and in the material layer through a fourth mask. Fifth features are formed in an alignment region between the first, second, third and fourth product regions of each die area and in the material layer through the first, second, third and fourth masks. The first product region is free of the second, third, and fourth features.