SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20180297327A1

    公开(公告)日:2018-10-18

    申请号:US15768902

    申请日:2016-10-21

    摘要: It is an object to provide a method for producing a substrate for epitaxial growth having a higher degree of biaxial crystal orientation without forming an irregular part a3. The method for producing a substrate for epitaxial growth comprising a step of laminating a metal base material and a copper layer having an fcc rolling texture by surface-activated bonding, a step of applying mechanical polishing to the copper layer, and a step of carrying out orientation heat treatment of the copper layer, wherein the copper layer is laminated in such a way that, when ratios of the (200) plane of the copper layer before laminated and of the copper layer after laminated when measured by XRD are I0Cu and I0CLAD, respectively and ratios of the (220) plane of the copper layer before laminated and of the copper layer after laminated are I2Cu and I2CLAD, respectively, I0Cu

    METHOD FOR FORMING OXIDE LAYER, LAMINATED SUBSTRATE FOR EPITAXIAL GROWTH, AND METHOD FOR PRODUCING THE SAME
    5.
    发明申请
    METHOD FOR FORMING OXIDE LAYER, LAMINATED SUBSTRATE FOR EPITAXIAL GROWTH, AND METHOD FOR PRODUCING THE SAME 审中-公开
    用于形成氧化层的方法,用于外延生长的层压基板及其制造方法

    公开(公告)号:US20160194750A1

    公开(公告)日:2016-07-07

    申请号:US14916363

    申请日:2014-08-25

    IPC分类号: C23C14/35 C23C14/54 C23C14/08

    摘要: This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

    摘要翻译: 本发明提供一种在金属基板上形成氧化物层的方法,与金属基板的最外层相比,能够制造具有改善的晶体取向的氧化物层。 通过RF磁控溅射在金属基板20上形成氧化物层的方法包括以下步骤:在最外层将表现出99%的c轴取向的晶体取向金属基板20进行RF磁控溅射,同时调节角度α 由位于金属基板20上的成膜位置20a处的垂直线和从成膜位置20a到位于最靠近膜形成位置的靶10上的垂直磁通密度为零的点 位置20a至15度或更小。