公开(公告)号：US4008485A

公开(公告)日：1977-02-15

申请号：US588833

申请日：1975-06-20

申请人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Mitsuru Ura

发明人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Mitsuru Ura

IPC分类号： H01L21/208 ,  H01L33/16 ,  H01L33/30 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/305 ,  H01L33/0008 ,  H01L2224/45144 ,  H01L2224/85203 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  Y10S438/915

摘要： A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.

摘要翻译： 一种砷化镓红外发光二极管，其中掺杂Si的p型GaAs层形成在掺杂有n型GaAs衬底的Si掺杂n型GaAs层上，所述n型GaAs衬底掺杂有选自Sn， Se，Te和S.

公开(公告)号：US3998672A

公开(公告)日：1976-12-21

申请号：US645328

申请日：1975-12-30

申请人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Mitsuru Ura

发明人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Mitsuru Ura

IPC分类号： H01L21/208 ,  H01L33/30 ,  H01L33/40 ,  H01L33/62

CPC分类号： H01L33/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/05 ,  Y10S148/056 ,  Y10S148/115 ,  Y10S438/915

摘要： A recess is formed in one of the principal surfaces of an N-type substrate of GaAs. Through the liquid phase growth technique, a silicon-doped N-type GaAs layer is formed on the one of the principal surfaces and on the surface of the recess and a silicon-doped P-type GaAs layer is continuously formed on the N-type GaAs layer. The liquid-phase-grown GaAs layers are so cut that the PN junction between the layers may be exposed on a plane.

摘要翻译： 在GaAs的N型衬底的一个主表面上形成凹部。 通过液相生长技术，在一个主表面和凹槽的表面上形成硅掺杂的N型GaAs层，并且在N型上连续形成掺硅的P型GaAs层 GaAs层。 液相生长的GaAs层被切割，使得这些层之间的PN结可以暴露在平面上。

公开(公告)号：US4585706A

公开(公告)日：1986-04-29

申请号：US769302

申请日：1985-08-26

申请人： Yukio Takeda ,  Satoru Ogihara ,  Mitsuru Ura ,  Kousuke Nakamura ,  Tadamichi Asai ,  Tokio Ohkoshi ,  Yasuo Matsushita ,  Kunihiro Maeda

发明人： Yukio Takeda ,  Satoru Ogihara ,  Mitsuru Ura ,  Kousuke Nakamura ,  Tadamichi Asai ,  Tokio Ohkoshi ,  Yasuo Matsushita ,  Kunihiro Maeda

IPC分类号： C22C29/16 ,  C04B35/581 ,  H01L21/318 ,  H01L23/15 ,  H01L29/12 ,  B32B15/04

CPC分类号： H01L21/318 ,  C04B35/581 ,  H01L23/15 ,  H01L2224/45124 ,  H01L2224/48472 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01039 ,  H01L2924/14 ,  Y10T428/12528 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12674

摘要： A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.

摘要翻译： 包括具有高热导率的烧结氮化铝的半导体器件，其包含至少65重量％的氮化铝，以及铍，铍化合物，锂和锂化合物中的至少一种。

公开(公告)号：US4269899A

公开(公告)日：1981-05-26

申请号：US54274

申请日：1979-07-02

申请人： Moriaki Fuyama ,  Haruhiko Honda ,  Mitsuru Ura

发明人： Moriaki Fuyama ,  Haruhiko Honda ,  Mitsuru Ura

IPC分类号： B22F3/24 ,  B23B27/14 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/448 ,  C23C16/507 ,  C23C30/00 ,  B32B15/04

CPC分类号： C23C30/005 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/4488 ,  C23C16/507 ,  Y10T428/24967 ,  Y10T428/24983 ,  Y10T428/31678

摘要： A surface coated hard alloy material suitable for use as a material of cutting tools, anti-wear parts or the like in which high wear resistance, oxidation resistance and anti-weld characteristic are the essential requisites, and a method of producing the same. The material has a substrate of cemented carbide, cermet or the like material, a first coating layer of a hafnium compound and directly coating the substrate, a second coating layer of a solid solution of a hafnium compound and a titanium compound and coating the first coating layer, and a third coating layer of a titanium compound and coating the second coating layer. These coating layers are successively formed in a common reaction system, so that the adherence between the coating layers, as well as between the first coating layer and the substrate is remarkably improved. Also, the advantages of the hafnium compound layer and the titanium compound layer are effectively utilized to provide a high wear resistance, oxidation resistance and anti-weld characteristic of the final surface coated hard alloy material.

摘要翻译： 适合用作高耐磨性，耐氧化性和抗焊接特性的切削工具，耐磨部件等的材料的表面涂覆的硬质合金材料及其制造方法。 该材料具有硬质合金，金属陶瓷等材料的基材，铪化合物的第一涂层并直接涂覆基材，铪化合物和钛化合物的固溶体的第二涂层，并涂覆第一涂层 层和第三涂层，并涂覆第二涂层。 这些涂层依次形成在共同的反应体系中，使得涂层之间以及第一涂层和基材之间的粘附性显着提高。 此外，有效地利用铪化合物层和钛化合物层的优点，以提供最终的表面涂覆的硬质合金材料的高耐磨性，抗氧化性和抗焊接特性。

公开(公告)号：US4467309A

公开(公告)日：1984-08-21

申请号：US371571

申请日：1982-04-26

申请人： Yasuo Matsushita ,  Kousuke Nakamura ,  Mitsuru Ura

发明人： Yasuo Matsushita ,  Kousuke Nakamura ,  Mitsuru Ura

IPC分类号： C04B35/565 ,  C04B35/575 ,  H01C7/04

CPC分类号： C04B35/575 ,  C04B35/565 ,  H01C7/04

摘要： A high-temperature thermistor comprising, a polycrystalline sintered body consisting essentially of 0.1-8 weight percents of at least one kind selected from the group consisting of Be, BeO, Be.sub.2 C, B, BN, B.sub.2 O.sub.3 and B.sub.4 C which weight percents are calculated as the amount of only Be or B single substance from net amount, the balance SiC, and the inevitable impurities having not more than 2 weight percents of SiO.sub.2, not more than 0.1 weight percent of Al, not more than 0.2 weight percents of Fe, not more than 1 weight percent of Si, and not more than 0.4 weights percents of free carbon, a pair of electrode provided on the surfaces of the sintered body, and lead wires each connected to the respective electrodes, and a method of producing same.

摘要翻译： 一种高温热敏电阻器，其特征在于，包括：基本上由0.1-8重量％的至少一种选自Be，BeO，Be2C，B，BN，B2O3和B4C组成的多晶烧结体，所述重量百分数计算为 量为单纯的Be或B单一物质，余量为SiC，不可避免的杂质为不超过2重量％的SiO 2，不超过0.1重量％的Al，不超过0.2重量％的Fe，不超过 1重量％以上，不超过0.4重量％的游离碳，设置在烧结体表面的一对电极和各自连接到各个电极的引线及其制造方法。

公开(公告)号：US4177114A

公开(公告)日：1979-12-04

申请号：US937803

申请日：1978-08-29

申请人： Yoshihiro Suzuki ,  Mitsuru Ura ,  Hiroshi Takahashi

发明人： Yoshihiro Suzuki ,  Mitsuru Ura ,  Hiroshi Takahashi

IPC分类号： C23C18/44 ,  C25D3/46 ,  C25D5/34

CPC分类号： C23C18/44 ,  C25D3/46 ,  C25D5/34 ,  Y10S205/916

摘要： A process for silver-plating, which comprises steps of preplating a substrate material in an aqueous preplating solution comprising 10.sup.-5 to 0.02 mole/l of silver and more than 0.01 mole/l of a silver complexing agent such as thiocyanic ions under non-current density, to preplate a sufficient thickness of silver to restrain or substantially prevent substitution plating, and then electroplating the preplated substrate material until a sufficient thickness by supplying an electric current to said material in an aqueous silver plating solution comprising silver ions, thiocyanic ions and a film improving agent.

摘要翻译： 一种镀银方法，其包括以下步骤：在非水溶液中预沉积含有10-5至0.02摩尔/升银和大于0.01摩尔/升银络合剂例如硫氰酸根离子的预浸镀水溶液中的基底材料， 电流密度，以预先镀银足够的厚度以抑制或基本上防止替代电镀，然后通过在包含银离子，硫氰酸离子的水性镀银溶液中向所述材料提供电流而将预镀的衬底材料电镀至足够的厚度， 电影改良剂。

公开(公告)号：US4146906A

公开(公告)日：1979-03-27

申请号：US762128

申请日：1977-01-24

申请人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

发明人： Kenji Miyata ,  Mitsuru Ura ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/225 ,  H01L21/331 ,  H01L29/04 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/861 ,  H01L21/2257 ,  H01L29/04 ,  H01L29/74 ,  Y10S148/122

摘要： A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.

公开(公告)号：US4100310A

公开(公告)日：1978-07-11

申请号：US648943

申请日：1976-01-14

申请人： Mitsuru Ura ,  Takuzo Ogawa ,  Takaya Suzuki ,  Yosuke Inoue ,  Masayoshi Nomura

发明人： Mitsuru Ura ,  Takuzo Ogawa ,  Takaya Suzuki ,  Yosuke Inoue ,  Masayoshi Nomura

IPC分类号： C30B31/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/31625 ,  C30B31/18 ,  H01L21/00 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  Y10S118/90 ,  Y10S148/006 ,  Y10S148/043 ,  Y10S148/057

摘要： In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

摘要翻译： 在掺杂杂质的方法中，包括混合载气，半导体化合物气体和掺杂气体，并将混合气体导引到反应室，以形成在腔室内的衬底上掺杂有杂质的半导体层或半导体氧化物层， 将掺杂气体与其他气体混合之前的一部分掺杂气体被引导到气体分析器，并且监测掺杂气体中的杂质浓度以控制掺杂气体中的杂质浓度。

公开(公告)号：US4651192A

公开(公告)日：1987-03-17

申请号：US751587

申请日：1985-07-03

申请人： Yasuo Matsushita ,  Kousuke Nakamura ,  Mitsuru Ura ,  Fumiyuki Kobayashi

发明人： Yasuo Matsushita ,  Kousuke Nakamura ,  Mitsuru Ura ,  Fumiyuki Kobayashi

IPC分类号： H01L23/34 ,  H01L23/057 ,  H01L23/08 ,  H01L23/15 ,  H01L23/36 ,  H01L23/14 ,  H01L23/02

CPC分类号： H01L23/057 ,  H01L23/15 ,  H01L2224/32188 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195

摘要： A semiconductor device with a semiconductor element encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from SiC admixed with Be or a compound of Be.

摘要翻译： 具有封装在中空陶瓷封装中的半导体元件的半导体器件。 半导体元件配置的封装部分由与Be或Be化合物混合的SiC形成。

公开(公告)号：US4561010A

公开(公告)日：1985-12-24

申请号：US446514

申请日：1982-12-03

申请人： Satoru Ogihara ,  Yukio Takeda ,  Kunihiro Maeda ,  Kousuke Nakamura ,  Mitsuru Ura

发明人： Satoru Ogihara ,  Yukio Takeda ,  Kunihiro Maeda ,  Kousuke Nakamura ,  Mitsuru Ura

IPC分类号： C22C29/02 ,  C04B35/565 ,  C04B35/575 ,  H01B3/12 ,  H01L23/15 ,  H05K1/03 ,  H01L23/14 ,  H01L23/34 ,  H01L23/08

CPC分类号： C04B35/575 ,  C04B35/565 ,  H01B3/12 ,  H01L23/15 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01066 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/19107 ,  H05K1/0306

摘要： A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.01 to 10% by weight, with the remainder substantially comprising silicon carbide. This silicon carbide sintered body has an electrical resistivity of 10.sup.7 .OMEGA..cm or above at room temperature and is also excellent in electrical insulating properties and can be advantageously used as substrates for semiconductor devices, etc.

摘要翻译： 一种碳化硅烧结体，其包含碳化硅作为主要成分，用于向所述碳化硅提供电绝缘性能的第一组分，所述第一组分包含金属铍，铍化合物，硼和硼化合物中的至少一种，并且含有总量 以金属计算为0.01〜3.5重量％的第二成分，以及可以进一步促进由所述第一成分提供的所述碳化硅烧结体并且不容易扩散在所述碳化硅颗粒中的第二成分，所述第二成分包含至少一种选自 来自第一类元素，不包括氢和ium，第二类元素不包括铍，镭和汞，不包括硼和铝的III族元素，不包括碳的第IV族元素，V族元素，VIa族元素，VIIa族元素组 不含铁的VIII元素及其化合物，其总量为0.0 1至10重量％，其余基本上包含碳化硅。 该碳化硅烧结体在室温下的电阻率为107Ω·cm以上，电绝缘性也优异，可有利地用作半导体器件等的基板。