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    Working machine management system
    1.
    发明授权
    Working machine management system 失效
    工作机管理系统

    公开(公告)号：US07756736B2

    公开(公告)日：2010-07-13

    申请号：US10577530

    申请日：2004-10-26

    申请人： Tetsuya Nakayama ,  Shuji Arakawa ,  Yukie Nishikawa ,  Hidenori Koizumi

    发明人： Tetsuya Nakayama ,  Shuji Arakawa ,  Yukie Nishikawa ,  Hidenori Koizumi

    IPC分类号： G06F9/46

    CPC分类号： G06Q10/0631 ,  E02F9/2054 ,  E02F9/26 ,  E02F9/267 ,  G06Q10/02 ,  G07C5/008 ,  G08G1/123

    摘要： A server (10) enables users (A-B) sharing the same working machine (1) to mutually monitor a usage state by each user. The server (10) receives a user ID, the working time, the engine cooling water temperature, and the current position that are detected in the working machine (1) through a satellite communication network, and calculates the usage time, the usage location, the load amount, and a usage proportion for each user. The server (10) sends a warning to the user terminals 20 when the usage time or location is not as planned, or the load amount is excessive. The server (10) periodically reports the usage times and locations, the load amounts, and the usage proportions for the users (A-B) to the user terminals (20). The server (10) allocates maintenance costs of the working machine (1) automatically between the users (A-B) according to the usage proportions of the users (A-B).

    摘要翻译： 服务器（10）使得共享相同工作机器（1）的用户（A-B）能够相互监视每个用户的使用状态。 服务器（10）通过卫星通信网络接收在工作机器（1）中检测到的用户ID，工作时间，发动机冷却水温度和当前位置，并计算使用时间，使用位置， 负载量和每个用户的使用比例。 服务器（10）当使用时间或位置未按计划进行时，或者负载量过大，向用户终端20发送警告。 服务器（10）定期向用户终端（20）报告用户（A-B）的使用时间和位置，负载量和使用比例。 服务器（10）根据用户（A-B）的使用比例自动地在用户（A-B）之间分配工作机器（1）的维护费用。

    Working machine management system
    2.
    发明申请
    Working machine management system 失效
    工作机管理系统

    公开(公告)号：US20070094055A1

    公开(公告)日：2007-04-26

    申请号：US10577530

    申请日：2004-10-26

    申请人： Tetsuya Nakayama ,  Shuji Arakawa ,  Yukie Nishikawa ,  Hidenori Koizumi

    发明人： Tetsuya Nakayama ,  Shuji Arakawa ,  Yukie Nishikawa ,  Hidenori Koizumi

    IPC分类号： G06Q10/00

    CPC分类号： G06Q10/0631 ,  E02F9/2054 ,  E02F9/26 ,  E02F9/267 ,  G06Q10/02 ,  G07C5/008 ,  G08G1/123

    摘要： A server (10) enables users (A-B) sharing the same working machine (1) to mutually monitor a usage state by each user. The server (10) receives a user ID, the working time, the engine cooling water temperature, and the current position that are detected in the working machine (1) through a satellite communication network, and calculates the usage time, the usage location, the load amount, and a usage proportion for each user. The server (10) sends a warning to the user terminals 20 when the usage time or location is not as planned, or the load amount is excessive. The server (10) periodically reports the usage times and locations, the load amounts, and the usage proportions for the users (A-B) to the user terminals (20). The server (10) allocates maintenance costs of the working machine (1) automatically between the users (A-B) according to the usage proportions of the users (A-B).

    摘要翻译： 服务器（10）使得共享相同工作机器（1）的用户（A-B）能够相互监视每个用户的使用状态。 服务器（10）通过卫星通信网络接收在工作机器（1）中检测到的用户ID，工作时间，发动机冷却水温度和当前位置，并计算使用时间，使用位置， 负载量和每个用户的使用比例。 服务器（10）当使用时间或位置未按计划进行时，或者负载量过大，向用户终端20发送警告。 服务器（10）定期向用户终端（20）报告用户（A-B）的使用时间和位置，负载量和使用比例。 服务器（10）根据用户（A-B）的使用比例自动地在用户（A-B）之间分配工作机器（1）的维护费用。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08618551B2

    公开(公告)日：2013-12-31

    申请号：US13219862

    申请日：2011-08-29

    申请人： Yukie Nishikawa ,  Hironori Yamasaki ,  Katsuyoshi Furuki ,  Takashi Kataoka

    发明人： Yukie Nishikawa ,  Hironori Yamasaki ,  Katsuyoshi Furuki ,  Takashi Kataoka

    IPC分类号： H01L31/0256

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

    摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.

    摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。 第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。 第二导电类型层包括第二包覆层，电流扩散层和第二接触层。 第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。 第一触点和窗口层的带隙能量大于发光层的带隙能量。 选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130221367A1

    公开(公告)日：2013-08-29

    申请号：US13599853

    申请日：2012-08-30

    申请人： Katsuyoshi Furuki ,  Hironori Yamasaki ,  Yukie Nishikawa

    发明人： Katsuyoshi Furuki ,  Hironori Yamasaki ,  Yukie Nishikawa

    IPC分类号： H01L33/60 ,  H01L33/02

    CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.

    摘要翻译： 根据一个实施例，半导体发光器件包括发光层，第一电极，第一导电型层，第二导电类型层和第二电极。 第一电极包括反射金属层。 第一导电类型层设置在发光层和第一电极之间。 第二导电类型层在发光层侧具有第一表面和在第一表面的相对侧上的第二表面。 第二电极设置在第二导电类型层的第二表面上。 提供在第一导电类型层和反射金属层之间的界面的多个具有至少第一凹凸结构。 不设置第二电极的第二导电型层的第二表面的区域具有第二凹凸结构。

    LIGHT EMITTING ELEMENT
    5.
    发明申请
    LIGHT EMITTING ELEMENT 有权
    发光元件

    公开(公告)号：US20120104431A1

    公开(公告)日：2012-05-03

    申请号：US13048046

    申请日：2011-03-15

    申请人： Takashi Kataoka ,  Yukie Nishikawa ,  Hironori Yamasaki

    发明人： Takashi Kataoka ,  Yukie Nishikawa ,  Hironori Yamasaki

    IPC分类号： H01L33/40

    CPC分类号： H01L33/14 ,  H01L33/22

    摘要： According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.

    摘要翻译： 根据一个实施例，发光元件包括发光层，包覆层，电流扩散层，第二层和电极。 发光层能够发射发光。 电流扩散层包括表面处理层和第一层。 表面处理层具有包括与凸部相邻设置的凸部和底部的表面。 第一层设置在表面处理层和包覆层之间。 第二层设置在表面处理层和包覆层之间，并且包括杂质浓度高于电流扩散层的杂质浓度的区域。 电极设置在表面处理层的没有设置凸部和底部的表面的区域中。

    Semiconductor device and method for manufacturing same
    7.
    发明申请
    Semiconductor device and method for manufacturing same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20090011537A1

    公开(公告)日：2009-01-08

    申请号：US12213918

    申请日：2008-06-26

    申请人： Tatsuo Shimizu ,  Takeshi Yamaguchi ,  Yukie Nishikawa

    发明人： Tatsuo Shimizu ,  Takeshi Yamaguchi ,  Yukie Nishikawa

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/28194 ,  H01L21/28202 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

    摘要： The present invention is to obtain an MIS transistor which allows considerable reduction in threshold fluctuation for each transistor and has a low threshold voltage. First gate electrode material for nMIS and second gate electrode material for pMIS can be mutually converted to each other, so that a process can be simplified. Such a fact that a dependency of a work function on a doping amount is small is first disclosed, so that fluctuation in threshold voltage for each transistor hardly occurs.

    摘要翻译： 本发明是为了获得允许每个晶体管的阈值波动显着降低并且具有低阈值电压的MIS晶体管。 用于nMIS的第一栅电极材料和用于pMIS的第二栅极电极材料可以相互转换，从而可以简化工艺。 首先公开了功函数对掺杂量的依赖性小的事实，因此几乎不发生各晶体管的阈值电压的波动。

    Field effect transistor having a MIS structure and method of fabricating the same
    8.
    发明授权
    Field effect transistor having a MIS structure and method of fabricating the same 有权
    具有MIS结构的场效应晶体管及其制造方法

    公开(公告)号：US06914312B2

    公开(公告)日：2005-07-05

    申请号：US10396416

    申请日：2003-03-26

    申请人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

    发明人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

    IPC分类号： H01L21/318 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A MIS type field effect transistor including gate dielectrics having a rare-earth metal oxynitride layer with a high dielectric constant, which can maintain good interface characteristics, can be provided. A field effect transistor according to one aspect of this invention includes a gate dielectric having a substantially crystalline rare-earth metal oxynitride layer containing one or more metals selected from rare-earth metals, oxygen, and nitrogen. The rare-earth metal oxynitride layer contacts a predetermined region of a Si semiconductor substrate, and the nitrogen exists at the interface between the rare-earth metal oxynitride layer and the Si semiconductor substrate, and in the bulk of the rare-earth metal oxynitride. The transistor further includes a gate electrode formed on the gate dielectrics and source and drain regions, one being formed at one side of the gate electrode and the other being formed at the other side of the gate electrode in the Si semiconductor substrate.

    摘要翻译： 可以提供包括能够保持良好的界面特性的具有高介电常数的稀土金属氧氮化物层的栅极电介质的MIS型场效应晶体管。 根据本发明的一个方面的场效应晶体管包括具有基本上结晶的稀土金属氧氮化物层的栅极电介质，所述稀土金属氧氮化物层含有选自稀土金属，氧和氮的一种或多种金属。 稀土金属氮氧化物层与Si半导体衬底的预定区域接触，并且氮存在于稀土金属氧氮化物层和Si半导体衬底之间的界面处，并且在大部分稀土金属氧氮化物中。 晶体管还包括形成在栅极电介质和源极和漏极区上的栅极，一个形成在栅电极的一侧，另一个形成在Si半导体衬底中的栅电极的另一侧。