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    Integration scheme for metal gap fill, with fixed abrasive CMP
    2.
    发明授权
    Integration scheme for metal gap fill, with fixed abrasive CMP 有权
    金属间隙填充的集成方案，固定磨料CMP

    公开(公告)号：US06943114B2

    公开(公告)日：2005-09-13

    申请号：US10084194

    申请日：2002-02-28

    申请人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    发明人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    IPC分类号： H01L21/3105 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31053 ,  Y10S438/959

    摘要： In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill;b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; andc) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough away from the lines to prevent damage to the lines.

    摘要翻译： 在平坦化半导体晶片的方法中，改进包括在金属互连线上方抛光，以将晶片的形貌均匀地抛光到晶片上的预定端点上，该晶圆足够靠近金属互连线上方，远离线路远离线以防止损坏 包括：a）通过在金属互连件的顶部，金属互连件之间以及电介质层的表面上沉积HDP填充物，填充在形成的晶片之间的金属互连线之间的间隙， 金属互连以产生HDP溢出; b）使来自步骤a）的经处理的半导体晶片的HDP的填充表面与固定的研磨抛光垫接触; 以及c）相对移动所述晶片和所述固定研磨抛光垫以影响足以达到所述晶片上的预定端点和所述晶片上的均匀平坦表面的抛光速率，所述平坦表面足够靠近所述金属互连线，并且远离所述线远离所述线，以防止损坏 线条。

    Three layer aluminum deposition process for high aspect ratio CL contacts
    3.
    发明授权
    Three layer aluminum deposition process for high aspect ratio CL contacts 失效
    三层铝沉积工艺，用于高纵横比CL接触

    公开(公告)号：US06794282B2

    公开(公告)日：2004-09-21

    申请号：US10305063

    申请日：2002-11-27

    申请人： Thomas Goebel ,  Werner Robl ,  Rajeev Malik ,  Mihel Seitz

    发明人： Thomas Goebel ,  Werner Robl ,  Rajeev Malik ,  Mihel Seitz

    IPC分类号： H01L2144

    CPC分类号： H01L27/10888 ,  H01L21/76882

    摘要： A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the conductor and a recess is formed in the dielectric layer by removing a portion of the dielectric layer to expose at least a portion of the conductor. A first layer of aluminum is deposited over the top surface of the dielectric, along the sidewalls of the dielectric layer and over the exposed portion of the conductor without altering the temperature of the semiconductor device. A second layer of aluminum is deposited over the first layer of aluminum at a temperature greater than about 300° C. A third layer of aluminum is deposited over the second layer of aluminum so as to completely fill the recess in the dielectric layer. The third layer of aluminum is slow deposited at a temperature greater than about 300° C.

    摘要翻译： 形成半导体器件的方法包括提供包括形成在其上的导体的半导体器件。 在导体上形成电介质层，并且通过去除电介质层的一部分以露出导体的至少一部分，在电介质层中形成凹陷。 沿着电介质层的侧壁并在导体的暴露部分之上沉积在电介质的顶表面上的第一层铝，而不改变半导体器件的温度。 在大于约300℃的温度下，在第一层铝上沉积第二层铝。第三层铝沉积在第二层铝上，以便完全填充介电层中的凹槽。 第三层铝在大于约300℃的温度下缓慢沉积

    Method and system for predicting a drill string stuck pipe event
    5.
    发明授权
    Method and system for predicting a drill string stuck pipe event 有权
    用于预测钻柱卡住管道事件的方法和系统

    公开(公告)号：US08752648B2

    公开(公告)日：2014-06-17

    申请号：US13883822

    申请日：2012-10-26

    申请人： Thomas Goebel ,  Roberto Valerio Molina ,  Ricardo Vilalta ,  Kinjal Dhar Gupta

    发明人： Thomas Goebel ,  Roberto Valerio Molina ,  Ricardo Vilalta ,  Kinjal Dhar Gupta

    IPC分类号： E21B45/00 ,  E21B44/00 ,  G06N3/08 ,  E21B41/00 ,  G06N99/00

    CPC分类号： E21B41/0092 ,  E21B44/00 ,  G06K9/6292 ,  G06N3/08 ,  G06N99/005

    摘要： Predicting a drill string stuck pipe event. At least some of the illustrative embodiments are methods including: receiving a plurality of drilling parameters from a drilling operation; applying the plurality of drilling parameters to an ensemble prediction model comprising at least three machine-learning algorithms operated in parallel, each machine-learning algorithm predicting a probability of occurrence of a future stuck pipe event based on at least one of the plurality of drilling parameters, the ensemble prediction model creates a combined probability based on the probability of occurrence of the future stuck pipe event of each machine-learning algorithm; and providing an indication of a likelihood of a future stuck pipe event to a drilling operator, the indication based on the combined probability.

    摘要翻译： 预测钻柱卡住管道事件。 至少一些说明性实施例是一种方法，包括：从钻井操作接收多个钻孔参数; 将所述多个钻孔参数应用于包括并行操作的至少三个机器学习算法的整体预测模型，每个机器学习算法基于所述多个钻孔参数中的至少一个来预测未来卡箍管事件的发生概率 综合预测模型基于每个机器学习算法的未来卡通管道事件的发生概率创建组合概率; 并且向钻井操作者提供未来卡住管道事件的可能性的指示，基于组合概率的指示。

    Piezoelectric Component and Method for Producing an Electrical Contact
    8.
    发明申请
    Piezoelectric Component and Method for Producing an Electrical Contact 有权
    压电元件和电触点的制造方法

    公开(公告)号：US20110187239A1

    公开(公告)日：2011-08-04

    申请号：US12970590

    申请日：2010-12-16

    申请人： Gernot Feiel ,  Axel Pecina ,  Rainer Hoermann ,  Thomas Goebel

    发明人： Gernot Feiel ,  Axel Pecina ,  Rainer Hoermann ,  Thomas Goebel

    IPC分类号： H01L41/047 ,  H01L41/22

    CPC分类号： H01L41/0472 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0533 ,  H01L41/083 ,  H01L41/25 ,  H01L41/293 ,  H03H3/02 ,  H03H3/04 ,  H03H2003/0428 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49147 ,  Y10T29/49155

    摘要： A piezoelectric component includes an electromechanical transducer with two first electrodes and a second electrode. The second electrode is arranged between the two first electrodes. The transducer also includes a first main side, a second main side, opposite from the first main side, and a first longitudinal side. A first contiguous metallization layer is arranged on a first partial region of the first main side and on a partial region of the first longitudinal side adjacent to the first partial region of the first main side. Here, the partial region of the first longitudinal side is kept at a sufficient distance from a side edge facing the second main side and the partial region electrically contacts the at least two first electrodes.

    摘要翻译： 压电元件包括​​具有两个第一电极和第二电极的机电换能器。 第二电极布置在两个第一电极之间。 换能器还包括第一主侧，与第一主侧相对的第二主侧和第一纵向侧。 第一连续的金属化层被布置在第一主侧的第一部分区域和与第一主侧的第一部分区域相邻的第一纵向侧的部分区域上。 这里，第一纵向侧的部分区域保持与面向第二主侧的侧边缘足够的距离，并且部分区域电接触至少两个第一电极。