公开(公告)号：US20090069042A1

公开(公告)日：2009-03-12

申请号：US12044185

申请日：2008-03-07

申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Ost

发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Ost

IPC分类号： H04B7/005

CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

公开(公告)号：US08265681B2

公开(公告)日：2012-09-11

申请号：US12044185

申请日：2008-03-07

申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

IPC分类号： H04B7/185 ,  H04B7/00 ,  H04B1/00 ,  H04B17/00 ,  H04B1/38 ,  H04B15/00 ,  H04W4/00 ,  H04K1/02 ,  H04L27/10

CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

公开(公告)号：US20120302279A1

公开(公告)日：2012-11-29

申请号：US13569290

申请日：2012-08-08

申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

IPC分类号： H04W52/20 ,  H04W52/12

CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

公开(公告)号：US08412259B2

公开(公告)日：2013-04-02

申请号：US13569290

申请日：2012-08-08

申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

IPC分类号： H04B7/185 ,  H04B7/00 ,  H04B1/00 ,  H04B17/00 ,  H04B1/38 ,  H04B15/00 ,  H04W4/00 ,  H04K1/02 ,  H04L27/10

CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

公开(公告)号：US11360083B2

公开(公告)日：2022-06-14

申请号：US15327971

申请日：2015-07-22

申请人： Heiner Linke ,  Alf Månsson ,  Christelle Prinz ,  Jonas Ohlsson ,  Cassandra Niman ,  Mercy Lard ,  Aleksandra Dabkowska ,  Nicklas Anttu

发明人： Heiner Linke ,  Alf Månsson ,  Christelle Prinz ,  Jonas Ohlsson ,  Cassandra Niman ,  Mercy Lard ,  Aleksandra Dabkowska ,  Nicklas Anttu

IPC分类号： G01N33/543 ,  G01N21/64 ,  G01N21/77 ,  B01L3/00 ,  G01N33/542 ,  B82Y15/00

摘要： A nanowire molecular sensor, and a molecular detection system, comprising a nanowire waveguide (30), a nanowire sidewall (51) functionalized in order to attach a molecule (54), and light emissive point sources (52), wherein the amount of light emitted at an end (53) of the waveguide is dependent of the amount of specific molecules attached to the sidewall of the nanowire. A method employing said sensor may be used for single cell detection and analysis.

公开(公告)号：US09947829B2

公开(公告)日：2018-04-17

申请号：US13805273

申请日：2011-06-27

申请人： Jonas Ohlsson

发明人： Jonas Ohlsson

IPC分类号： H01L33/12 ,  B82Y10/00 ,  H01L29/06 ,  H01L33/18 ,  H01L21/02 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  B82Y99/00

CPC分类号： H01L33/12 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/0684 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  Y10S977/762

摘要： The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 μm arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).

公开(公告)号：US09087896B2

公开(公告)日：2015-07-21

申请号：US14048502

申请日：2013-10-08

申请人： Jonas Ohlsson ,  Lars Samuelson ,  Erik Lind ,  Lars-Erik Wernersson ,  Truls Lowgren

发明人： Jonas Ohlsson ,  Lars Samuelson ,  Erik Lind ,  Lars-Erik Wernersson ,  Truls Lowgren

IPC分类号： H01L29/66 ,  H01L29/78 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/775 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L33/24

CPC分类号： H01L29/7827 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7828 ,  H01L29/78642 ,  H01L33/24 ,  Y10S977/888 ,  Y10S977/89

摘要： The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilized in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

摘要翻译： 本发明涉及在垂直半导体器件（1）的垂直和水平表面（15,20）上提供不同厚度的层。 特别地，本发明涉及栅电极和在半导体结构中形成精密层（28），该半导体结构包括基底（10）和基本上从基底上竖立的细长结构（5）。 根据本发明的方法，将装置（1）的垂直几何结构与各向异性沉积或各向异性去除沉积材料结合使用以形成非常高精度的垂直或水平层。

公开(公告)号：US08692301B2

公开(公告)日：2014-04-08

申请号：US13062018

申请日：2009-09-04

申请人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

发明人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

IPC分类号： H01L33/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L31/03529 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).

摘要翻译： 本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生 电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。 提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或 活动区域（9）的雪崩倍增区域。

公开(公告)号：US08067299B2

公开(公告)日：2011-11-29

申请号：US12662962

申请日：2010-05-13

申请人： Lars Ivar Samuelson ,  Patrik Svensson ,  Jonas Ohlsson ,  Truls Lowgren

发明人： Lars Ivar Samuelson ,  Patrik Svensson ,  Jonas Ohlsson ,  Truls Lowgren

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/336

CPC分类号： B82B1/005 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/02 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/938

摘要： The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

公开(公告)号：US08049203B2

公开(公告)日：2011-11-01

申请号：US11812226

申请日：2007-06-15

申请人： Lars Ivar Samuelson ,  Patrik Svensson ,  Jonas Ohlsson ,  Truls Lowgren

发明人： Lars Ivar Samuelson ,  Patrik Svensson ,  Jonas Ohlsson ,  Truls Lowgren

IPC分类号： H01L29/06

CPC分类号： B82B1/005 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/78642 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/02 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/938

摘要： The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

摘要翻译： 本发明涉及包含半导体纳米元件的半导体器件。 具体地说，本发明涉及一种具有体积元件的装置，该体积元件的直径大于与纳米元件外延连接的纳米元件的直径。 体积元件正在被掺杂以便提供高电荷载流子注入纳米元件和电连接中的低访问阻力。 纳米元件可以从半导体衬底直立。 在体积元件上形成的低电阻率材料的同心层形成接触。