公开(公告)号：US09089007B2

公开(公告)日：2015-07-21

申请号：US13766885

申请日：2013-02-14

申请人： Yao-Hung Yang ,  Jeonghoon Oh ,  Frank F. Hooshdaran ,  Tom K. Cho ,  Tao Hou

发明人： Yao-Hung Yang ,  Jeonghoon Oh ,  Frank F. Hooshdaran ,  Tom K. Cho ,  Tao Hou

IPC分类号： H05B3/10 ,  H05B3/12 ,  H01L21/67 ,  H05B1/02 ,  F26B19/00

CPC分类号： H05B3/12 ,  H01L21/67103 ,  H01L21/67248 ,  H05B1/0233

摘要： Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.

摘要翻译： 提供了方法和衬底处理系统，用于当衬底设置在衬底支撑组件的衬底支撑表面上时，用于控制衬底加热效率并在衬底的表面上产生期望的温度分布。 基板支撑组件具有最小的软件控制和硬件要求，并且包括由多个加热元件部分组成的加热元件。 加热元件连接到用于调节多个加热元件部分的温度输出的电源并且在处理室内的基板支撑组件的基板支撑表面上提供可调节的多加热区域和期望的温度分布。

公开(公告)号：US20130284721A1

公开(公告)日：2013-10-31

申请号：US13766885

申请日：2013-02-14

申请人： Yao-Hung Yang ,  Jeonghoon Oh ,  Frank F. Hooshdaran ,  Tom K. Cho ,  Tao Hou

发明人： Yao-Hung Yang ,  Jeonghoon Oh ,  Frank F. Hooshdaran ,  Tom K. Cho ,  Tao Hou

IPC分类号： H05B3/12

CPC分类号： H05B3/12 ,  H01L21/67103 ,  H01L21/67248 ,  H05B1/0233

摘要： Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.

摘要翻译： 提供了方法和衬底处理系统，用于当衬底设置在衬底支撑组件的衬底支撑表面上时，用于控制衬底加热效率并在衬底的表面上产生期望的温度分布。 基板支撑组件具有最小的软件控制和硬件要求，并且包括由多个加热元件部分组成的加热元件。 加热元件连接到用于调节多个加热元件部分的温度输出的电源并且在处理室内的基板支撑组件的基板支撑表面上提供可调节的多加热区域和期望的温度分布。

公开(公告)号：US20130004681A1

公开(公告)日：2013-01-03

申请号：US13174690

申请日：2011-06-30

申请人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

发明人： Alan Tso ,  Jeonghoon Oh ,  Yi Zheng ,  Tom K. Cho ,  Zheng Yuan ,  Lin Zhang ,  Qunhua Wang ,  Robin L. Tiner

IPC分类号： C23C16/50 ,  F24H9/12

CPC分类号： C23C16/45565

摘要： Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.

摘要翻译： 本发明的实施例提供了一种等离子体处理室，其具有用于将处理气体输送到处理室的微型封隔板以及使用迷你封隔板来提高均匀性的方法。 阻挡板组件包括具有多个通孔的迷你阻塞板，以及两个或更多个支架间隔件，其构造成将迷你阻挡板定位成远离阻挡板。

公开(公告)号：US20110164955A1

公开(公告)日：2011-07-07

申请号：US12835511

申请日：2010-07-13

申请人： John M. White ,  Jeonghoon Oh ,  Tom K. Cho ,  Silja James ,  Uday Pai ,  Oscar Lopez ,  Alexander S. Polyak

发明人： John M. White ,  Jeonghoon Oh ,  Tom K. Cho ,  Silja James ,  Uday Pai ,  Oscar Lopez ,  Alexander S. Polyak

IPC分类号： H01L21/683 ,  F16M11/00

CPC分类号： H01L21/68742

摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.

摘要翻译： 提供了用于处理包括平移耐磨板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于将衬底从处理或其它类型的室中的衬底支撑件定位的升降销上的应力。 在另一个实施例中，一种用于处理衬底的设备包括处理室，其包括设置在室主体中的衬底支撑件。 衬套组件设置在衬底支撑件中。 提升销设置穿过套管组件。 提供了耐磨板，其连接到腔室主体并与提升销对准。 耐磨板相对于室主体的中心线横向运动，以在接触耐磨板时适应提升销的横向运动。

公开(公告)号：US20130012030A1

公开(公告)日：2013-01-10

申请号：US13634526

申请日：2010-03-17

申请人： Annamalai Lakshmanan ,  Jianshe Tang ,  Dustin W. Ho ,  Francimar C. Schmitt ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh ,  Hari K. Ponnekanti ,  Chris Eberspacher ,  Zheng Yuan

发明人： Annamalai Lakshmanan ,  Jianshe Tang ,  Dustin W. Ho ,  Francimar C. Schmitt ,  Alan Tso ,  Tom K. Cho ,  Brian Sy-Yuan Shieh ,  Hari K. Ponnekanti ,  Chris Eberspacher ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： H01L31/1824 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/5096 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.

摘要翻译： 提供了在形成太阳能电池期间沉积非晶硅和微晶硅膜的装置和方法。 在一个实施方案中，提供了一种方法和装置，用于将氢自由基直接生成并引入到处理室的处理区域中，以与用于在基底上沉积膜的含硅前体反应。 在一个实施方案中，氢自由基由远程等离子体源产生，并且经由视线路径直接引入处理区域，以在到达处理区域之前最小化氢自由基的能量损失。

公开(公告)号：US20120171852A1

公开(公告)日：2012-07-05

申请号：US13266978

申请日：2010-08-02

申请人： Zheng Yuan ,  Mandar B. Pandit ,  Francimar C. Schmitt ,  Yi Zheng ,  Fan Yang ,  Lipan Li ,  Alan Tso ,  Dustin W. Ho ,  Tom K. Cho ,  Randhir Thakur

发明人： Zheng Yuan ,  Mandar B. Pandit ,  Francimar C. Schmitt ,  Yi Zheng ,  Fan Yang ,  Lipan Li ,  Alan Tso ,  Dustin W. Ho ,  Tom K. Cho ,  Randhir Thakur

IPC分类号： H01L21/20 ,  C23C16/50

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/452 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.

摘要翻译： 提供了在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。 在一个实施例中，在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，其耦合到 处理室，向处理室施加小于17.5mW / cm 2的RF功率，并在基板上形成含硅层。

公开(公告)号：US07582167B2

公开(公告)日：2009-09-01

申请号：US11866505

申请日：2007-10-03

申请人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

发明人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67126 ,  C23C16/4401

摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

公开(公告)号：US07498268B2

公开(公告)日：2009-03-03

申请号：US11552129

申请日：2006-10-23

申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US07279049B2

公开(公告)日：2007-10-09

申请号：US10775769

申请日：2004-02-05

申请人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

发明人： Andrzej Kaszuba ,  Sophia M. Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario David Silvetti ,  Tom K. Cho ,  Indrajit Lahiri ,  Surinder S. Bedi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67126 ,  C23C16/4401

摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

公开(公告)号：US07074298B2

公开(公告)日：2006-07-11

申请号：US10150581

申请日：2002-05-17

申请人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

摘要翻译： 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率至少为约0.15，更优选为约0.2-0.25。