摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a radio electronic device mounting the semiconductor device.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a wireless electronic device mounting the semiconductor device.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a radio electronic device mounting the semiconductor device.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a wireless electronic device mounting the semiconductor device.
摘要:
The present invention provides a manufacturing method of an electronic circuit device including a multi-layer circuit board incorporated with a thin film capacitor small in size and of high performance capable of attaining higher capacitance value with a thin dielectric film of high dielectric constant and with favorable film quality. A first electrode layer and a thin film dielectric layer are laminated continuously in this order in one identical to laminate each of the layers on a leveled substrate in one identical chamber and then the first electrode layer is fabricated a conductor pattern.
摘要:
There is provided an insulation material having a dielectric constant of 10 or more, comprising a filler having a dielectric constant of 50 or more and having two peaks in different particle size ranges in a particle size distribution and an insulating resin combined with each other; an insulation material having a dielectric constant of 10 or more comprising, as essential components, 1) at least one filler selected from the group consisting of barium titanate, strontium titanate, potassium titanate, magnesium titanate, lead titanate, titanium dioxide, barium zirconate, calcium zirconate and lead zirconate, 2) an insulating resin and 3) a dispersant containing a carboxylic group; or an insulation material comprising a filler having a dielectric constant of 50 or more, a dispersant for dispersing the filler and an insulating resin as essential components, wherein an extract of a cured product of the insulation material obtained by extraction with water at 120° C. for 20 hours using a pressure vessel has a pH of 6 or higher.
摘要:
There is provided an insulation material having a dielectric constant of 10 or more, comprising a filler having a dielectric constant of 50 or more and having two peaks in different particle size ranges in a particle size distribution and an insulating resin combined with each other; an insulation material having a dielectric constant of 10 or more comprising, as essential components, 1) at least one filler selected from the group consisting of barium titanate, strontium titanate, potassium titanate, magnesium titanate, lead titanate, titanium dioxide, barium zirconate, calcium zirconate and lead zirconate, 2) an insulating resin and 3) a dispersant containing a carboxylic group; or an insulation material comprising a filler having a dielectric constant of 50 or more, a dispersant for dispersing the filler and an insulating resin as essential components, wherein an extract of a cured product of the insulation material obtained by extraction with water at 120° C. for 20 hours using a pressure vessel has a pH of 6 or higher.
摘要:
The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.
摘要:
The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the fillers followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.
摘要:
The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.