摘要:
The present invention provides a manufacturing method of an electronic circuit device including a multi-layer circuit board incorporated with a thin film capacitor small in size and of high performance capable of attaining higher capacitance value with a thin dielectric film of high dielectric constant and with favorable film quality. A first electrode layer and a thin film dielectric layer are laminated continuously in this order in one identical to laminate each of the layers on a leveled substrate in one identical chamber and then the first electrode layer is fabricated a conductor pattern.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a wireless electronic device mounting the semiconductor device.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a radio electronic device mounting the semiconductor device.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a wireless electronic device mounting the semiconductor device.
摘要:
There is provided an insulation material having a dielectric constant of 10 or more, comprising a filler having a dielectric constant of 50 or more and having two peaks in different particle size ranges in a particle size distribution and an insulating resin combined with each other; an insulation material having a dielectric constant of 10 or more comprising, as essential components, 1) at least one filler selected from the group consisting of barium titanate, strontium titanate, potassium titanate, magnesium titanate, lead titanate, titanium dioxide, barium zirconate, calcium zirconate and lead zirconate, 2) an insulating resin and 3) a dispersant containing a carboxylic group; or an insulation material comprising a filler having a dielectric constant of 50 or more, a dispersant for dispersing the filler and an insulating resin as essential components, wherein an extract of a cured product of the insulation material obtained by extraction with water at 120° C. for 20 hours using a pressure vessel has a pH of 6 or higher.
摘要:
A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a radio electronic device mounting the semiconductor device.
摘要:
There is provided an insulation material having a dielectric constant of 10 or more, comprising a filler having a dielectric constant of 50 or more and having two peaks in different particle size ranges in a particle size distribution and an insulating resin combined with each other; an insulation material having a dielectric constant of 10 or more comprising, as essential components, 1) at least one filler selected from the group consisting of barium titanate, strontium titanate, potassium titanate, magnesium titanate, lead titanate, titanium dioxide, barium zirconate, calcium zirconate and lead zirconate, 2) an insulating resin and 3) a dispersant containing a carboxylic group; or an insulation material comprising a filler having a dielectric constant of 50 or more, a dispersant for dispersing the filler and an insulating resin as essential components, wherein an extract of a cured product of the insulation material obtained by extraction with water at 120° C. for 20 hours using a pressure vessel has a pH of 6 or higher.
摘要:
The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.
摘要:
An adhesive which comprises (1) 100 parts by weight of an epoxy resin and a hardener therefor, (2) 75 to 300 parts by weight of an epoxidized acrylic copolymer having a glycidyl (meth)acrylate unit content of 0.5 to 6 wt. %, a glass transition temperature of −10° C. or higher and a weight average molecular weight of 100,000 or more and (3) 0.1 to 20 parts by weight of a latent curing accelerator; an adhesive member having a layer of the adhesive; an interconnecting substrate for semiconductor mounting having the adhesive member; and a semiconductor device containing the same.
摘要:
An adhesive which comprises (1) 100 parts by weight of an epoxy resin and a hardener therefor, (2) 75 to 300 parts by weight of an epoxidized acrylic copolymer having a glycidyl (meth)acrylate unit content of 0.5 to 6 wt. %, a glass transition temperature of −10° C. or higher and a weight average molecular weight of 100,000 or more and (3) 0.1 to 20 parts by weight of a latent curing accelerator; an adhesive member having a layer of the adhesive; an interconnecting substrate for semiconductor mounting having the adhesive member; and a semiconductor device containing the same.