公开(公告)号：US20110210407A1

公开(公告)日：2011-09-01

申请号：US13060670

申请日：2009-08-25

申请人： Youji Katayama ,  Yuuki Nakamura ,  Masanobu Miyahara ,  Koichi Kimura ,  Tsutomu Kitakatsu

发明人： Youji Katayama ,  Yuuki Nakamura ,  Masanobu Miyahara ,  Koichi Kimura ,  Tsutomu Kitakatsu

IPC分类号： H01L29/66 ,  B32B7/12 ,  H01L23/58

CPC分类号： H01L24/83 ,  C08G73/1046 ,  C08G73/14 ,  C09J7/20 ,  C09J179/08 ,  C09J2201/134 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2479/08 ,  H01L23/293 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2936 ,  H01L2224/29386 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2924/00013 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/351 ,  Y10T428/28 ,  Y10T428/2874 ,  Y10T428/2878 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2924/04642 ,  H01L2924/0503 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00

摘要： A double-faced adhesive film including: a supporting film; a first adhesive layer laminated on one surface of the supporting film; and a second adhesive layer laminated on the other surface of the supporting film, wherein the glass transition temperatures, after curing, of the first adhesive layer and the second adhesive layer are each 100° C. or lower, and the first adhesive layer and the second adhesive layer are the layers capable of being formed by a method including the steps of directly applying a varnish to the supporting film and drying the applied varnish.

摘要翻译： 一种双面粘合膜，包括：支撑膜; 层压在所述支撑膜的一个表面上的第一粘合剂层; 以及层叠在所述支撑膜的另一个表面上的第二粘合剂层，其中所述第一粘合层和所述第二粘合层的固化后的玻璃化转变温度各自为100℃以下，所述第一粘合层和 第二粘合剂层是能够通过包括以下步骤形成的层：将清漆直接涂布到支撑膜上并干燥涂布的清漆。

公开(公告)号：US20120244347A1

公开(公告)日：2012-09-27

申请号：US13420266

申请日：2012-03-14

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： C09J7/02 ,  C09J163/00 ,  C09J179/08 ,  B32B37/02 ,  B32B38/04

CPC分类号： C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is an adhesive film for a semiconductor for use in a method for manufacturing a semiconductor chip. The method includes preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5%, and the tensile breaking elongation is less than 110% of the elongation at maximum load. The semiconductor wafer is partitioned into multiple semiconductor chips and notches are formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction. The method also includes stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches.

摘要翻译： 在半导体芯片的制造方法中使用半导体用粘接膜。 该方法包括制备具有半导体晶片，半导体用粘合剂膜和切割带的叠层体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。 将半导体晶片划分成多个半导体芯片，并且从半导体晶片侧形成切口，使得用于半导体的粘合膜的至少一部分在其厚度方向上保持未切割。 该方法还包括沿着使多个半导体芯片分开的方向伸出切割带，以沿着切口分离半导体用粘合剂膜。

公开(公告)号：US08404564B2

公开(公告)日：2013-03-26

申请号：US12594847

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/00 ,  H01L21/301 ,  H01L21/78

CPC分类号： C09J183/10 ,  C08G73/106 ,  C08G77/26 ,  C08G77/452 ,  C09D183/08 ,  C09J179/08 ,  C09J183/08 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/296 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/2826 ,  Y10T428/2896 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4′-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below.

摘要翻译： 提供了一种用于半导体的粘合膜，其可以在低温下附着到半导体晶片，并且允许从半导体晶片以高产率获得半导体芯片，同时充分抑制芯片裂纹和毛刺的产生。 半导体用粘合膜包括聚酰亚胺树脂，其可以通过以下化学式（I）表示的含有4,4'-氧联二邻苯二甲酸二酐的四羧酸二酐和由以下通式（II）表示的含有硅氧烷二胺的二胺 ），并且可以在100℃或更低温度下连接到半导体晶片。

公开(公告)号：US08232185B2

公开(公告)日：2012-07-31

申请号：US12594634

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/46 ,  H01L21/78

CPC分类号： C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

摘要翻译： 提供了一种允许以高产率从半导体晶片获得半导体芯片的方法，同时充分抑制了芯片裂纹和毛刺的产生。 制造半导体芯片的方法包括制备具有半导体晶片的层叠体，半导体用粘合膜和切割带，其顺序层叠，将半导体晶片划分成多个半导体芯片，并由半导体形成沟槽 使得至少一部分用于半导体的粘合膜在其厚度方向上保持未切割，并且在使多个半导体芯片分开的方向上伸出切割带的步骤，以分离用于 沿着凹口的半导体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。

公开(公告)号：US20100112783A1

公开(公告)日：2010-05-06

申请号：US12594847

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/78 ,  B32B7/12 ,  C08G77/26 ,  C08L83/08

CPC分类号： C09J183/10 ,  C08G73/106 ,  C08G77/26 ,  C08G77/452 ,  C09D183/08 ,  C09J179/08 ,  C09J183/08 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/296 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/2826 ,  Y10T428/2896 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4′-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below.

摘要翻译： 提供了一种用于半导体的粘合膜，其可以在低温下附着到半导体晶片，并且允许从半导体晶片以高产率获得半导体芯片，同时充分抑制芯片裂纹和毛刺的产生。 半导体用粘合膜包括聚酰亚胺树脂，其可以通过以下化学式（I）表示的含有4,4'-氧联二邻苯二甲酸二酐的四羧酸二酐和由以下通式（II）表示的含有硅氧烷二胺的二胺 ），并且可以在100℃或更低温度下连接到半导体晶片。

公开(公告)号：US20100120229A1

公开(公告)日：2010-05-13

申请号：US12594634

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/78 ,  B32B7/10

CPC分类号： C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

摘要翻译： 提供了一种允许以高产率从半导体晶片获得半导体芯片的方法，同时充分抑制了芯片裂纹和毛刺的产生。 制造半导体芯片的方法包括制备具有半导体晶片的层叠体，半导体用粘合膜和切割带，其顺序层叠，将半导体晶片划分成多个半导体芯片，并由半导体形成沟槽 使得至少一部分用于半导体的粘合膜在其厚度方向上保持未切割，并且在使多个半导体芯片分开的方向上伸出切割带的步骤，以分离用于 沿着凹口的半导体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。

公开(公告)号：US06492203B1

公开(公告)日：2002-12-10

申请号：US09680369

申请日：2000-10-05

申请人： Yoshiaki Wakashima ,  Naoki Fukutomi ,  Kazuhisa Suzuki ,  Toshio Yamazaki ,  Tsutomu Kitakatsu ,  Susumu Naoyuki ,  Akinari Kida

发明人： Yoshiaki Wakashima ,  Naoki Fukutomi ,  Kazuhisa Suzuki ,  Toshio Yamazaki ,  Tsutomu Kitakatsu ,  Susumu Naoyuki ,  Akinari Kida

IPC分类号： H01L2144

CPC分类号： H01L24/85 ,  H01L21/4803 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49816 ,  H01L24/45 ,  H01L24/48 ,  H01L29/0657 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48624 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00

摘要： A semiconductor device fabrication process comprising an encapsulation step of carrying out encapsulation by vacuum pressure differential printing by the use of a liquid resin encapsulant containing a solvent in an amount of from 5% by weight to 50% by weight, and preferably from 25% by weight to 50% by weight. The encapsulation step comprises: printing the liquid resin encapsulant by vacuum pressure differential printing in such a way that; the encapsulant covers at least an internal connecting terminal provided on a substrate, a semiconductor chip, and a wire interconnecting the internal connecting terminal and the semiconductor chip; and that the thickness of the encapsulant lying above the wire at the highest position of the wire comes to be at least 0.8 times the thickness of the encapsulant lying beneath the wire at the same position; and curing or drying the encapsulant.

摘要翻译： 一种半导体器件制造方法，包括通过真空压差印刷进行封装的封装步骤，所述封装步骤通过使用含有溶剂的液体树脂密封剂，其量为5重量％至50重量％，优选25重量％ 重量至50％重量。 封装步骤包括：通过真空压差印刷印刷液态树脂密封剂， 密封剂至少覆盖设置在基板上的内部连接端子，半导体芯片和互连内部连接端子和半导体芯片的布线; 并且位于电线最高位置处的线上方的密封剂的厚度至少为位于相同位置下方的密封剂厚度的至少0.8倍; 并固化或干燥密封剂。

公开(公告)号：US20100167073A1

公开(公告)日：2010-07-01

申请号：US11997928

申请日：2006-08-03

申请人： Tsutomu Kitakatsu

发明人： Tsutomu Kitakatsu

IPC分类号： C08L33/24 ,  B32B27/28

CPC分类号： C09J179/08 ,  C08G59/08 ,  C08G59/4042 ,  C08L63/00 ,  C08L79/08 ,  C08L2666/02 ,  C08L2666/22 ,  C09J7/10 ,  C09J163/00 ,  C09J2463/00 ,  C09J2479/08 ,  H01L2224/29 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/15311 ,  Y10T428/31721 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to an adhesive film comprising a polyimide resin (A) and a thermosetting resin (B), wherein the polyimide resin (A) comprises a polyimide resin having a repeating unit represented by a formula (I) shown below, and the storage elastic modulus of the adhesive film at 250° C., following heat treatment at a temperature of 150 to 230° C. for a period of 0.3 to 5 hours, is not less than 0.2 MPa: (wherein, the m R1 groups each represent, independently, a bivalent organic group, the m R1 groups include a total of k organic groups selected from the group consisting of —CH2—, —CHR— and —CR2— (wherein, R represents a non-cyclic alkyl group of 1 to 5 carbon atoms), m represents an integer of not less than 8, m and k satisfy a relationship: k/m≧0.85, and R2 represents a tetracarboxylic acid residue).

摘要翻译： 本发明涉及包含聚酰亚胺树脂（A）和热固性树脂（B）的粘合剂膜，其中聚酰亚胺树脂（A）包含具有下述式（I）表示的重复单元的聚酰亚胺树脂，和 粘合膜在250℃下的储能弹性模量，在150〜230℃的温度下，在0.3〜5小时的温度下进行热处理后，为0.2MPa以上（式中， 独立地表示二价有机基团，m R 1基团包括总共选自-CH 2 - ， - CHR-和-CR 2 - 的其中的有机基团（其中，R表示非环状烷基1 至5个碳原子），m表示不小于8的整数，m和k满足关系式：k /m≥0.85，R2表示四羧酸残基）。

公开(公告)号：US06404068B1

公开(公告)日：2002-06-11

申请号：US09763192

申请日：2001-02-20

申请人： Toshiaki Tanaka ,  Takafumi Dohdoh ,  Tsutomu Kitakatsu ,  Aizou Kaneda ,  Masaaki Yasuda ,  Takashi Kousaka ,  Akira Kageyama

发明人： Toshiaki Tanaka ,  Takafumi Dohdoh ,  Tsutomu Kitakatsu ,  Aizou Kaneda ,  Masaaki Yasuda ,  Takashi Kousaka ,  Akira Kageyama

IPC分类号： H01L2348

CPC分类号： H01L23/3128 ,  C08L63/00 ,  C08L71/00 ,  C08L71/126 ,  C08L77/00 ,  C08L77/06 ,  C08L83/10 ,  C09D177/00 ,  C09D177/06 ,  C09D179/08 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  C08L2666/02 ,  C08L2666/08 ,  C08L2666/04 ,  C08L2666/14 ,  C08L2666/28 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20753

摘要： A paste composition which comprises as essential ingredients (A) a thermoplastic resin, (B) an epoxy resin, (C) a coupling agent, (D) a powdery inorganic filler, (E) a powder having rubber elasticity and (F) an organic solvent and which, when applied and dried, gives a coating film having a void content of 3% by volume or higher and a water vapor permeability as measured at 40° C. and 90 %RH of 500 g/m2·24 h or less; a protective film which is formed by applying the paste composition to a surface of a semiconductor part and drying it and has a void content of 3% by volume or higher and a water vapor permeability as measured at 40° C. and 90%RH of 500 g/m2·24 h or less; and a semiconductor device having the protective film.

摘要翻译： 作为必要成分（A）热塑性树脂，（B）环氧树脂，（C）偶联剂，（D）粉末状无机填料，（E）具有橡胶弹性的粉末和（F） 有机溶剂，当涂布并干燥时，得到空隙率为3体积％以上的涂膜，在40℃，90％RH下测定的水蒸气透过率为500g / m 2·24h， 减; 通过将糊剂组合物涂布在半导体部件的表面并干燥而形成的保护膜，其空隙率为3体积％以上，水分透过率为40℃，90％RH 500 g / m2.24 h以下; 以及具有保护膜的半导体器件。