SEMICONDUCTOR DEVICE
    7.
    发明公开

    公开(公告)号:US20240213208A1

    公开(公告)日:2024-06-27

    申请号:US18396035

    申请日:2023-12-26

    摘要: Provided is a semiconductor device. A semiconductor device is implemented as a semiconductor module package for driving an inverter, the semiconductor device may include: a first upper metal layer in which a plurality of semiconductor chips implementing a right phase switching pattern are disposed along a first direction to form a first row; a second upper metal layer in which a plurality of semiconductor chips implementing a left phase switching pattern are disposed along the first direction to form a second row; a first connection, in the first upper metal layer, connecting a plurality of semiconductor chips disposed along the first row to each other in series and to the second upper metal layer in parallel; and a second connection, in the second upper metal layer, connecting a plurality of semiconductor chips disposed along the second row to each other in series.

    SEMICONDUCTOR MODULE
    8.
    发明公开

    公开(公告)号:US20240153904A1

    公开(公告)日:2024-05-09

    申请号:US18475997

    申请日:2023-09-27

    发明人: Norihiro NASHIDA

    IPC分类号: H01L23/00

    摘要: A semiconductor module includes a first semiconductor chip including a first main electrode, a second semiconductor chip including a second main electrode, and a conductive pattern. The wiring member includes a connection portion, a first portion, a second portion, and a coupling portion. The coupling portion couples the connection portion, the first portion, and the second portion to one another. A connecting protrusion is formed on a connection surface of the connection portion. A first protrusion is formed on a first connection surface of the first portion. A second protrusion is formed on a second connection surface of the first portion. The conductive pattern and the connection surface are joined to each other by a joining material. The first main electrode and the first connection surface are joined to each other by a first joining material. The second main electrode and the second connection surface are joined to each other by a second joining material.