-
公开(公告)号：CN1197291A
公开(公告)日：1998-10-28
申请号：CN98107066.3
申请日：1998-02-21
申请人： 日本电气株式会社
CPC分类号： H01L24/85 , B23K20/007 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05556 , H01L2224/05624 , H01L2224/05638 , H01L2224/05647 , H01L2224/05664 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48738 , H01L2224/48747 , H01L2224/48764 , H01L2224/85 , H01L2924/00011 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01057 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/181 , H01L2924/01046 , H01L2924/00014 , H01L2224/78 , H01L2924/00 , H01L2224/48638 , H01L2924/013 , H01L2924/00015 , H01L2924/00013 , H01L2924/00012
摘要： 用于半导体器件的由第一和第二金属层组成的金属合金中,所述第一金属层由铜和铝组成,其中铜大约占0.1—10重量百分比,其余部分基本上为铝,而第二金属层由钯和金组成,其中钯大约占0.5—5重量百分比,其余部分基本上为金。
-
公开(公告)号：CN103515260A
公开(公告)日：2014-01-15
申请号：CN201310261023.3
申请日：2013-06-26
申请人： 英飞凌科技奥地利有限公司
CPC分类号： H01L23/3135 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49575 , H01L23/5389 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L24/85 , H01L24/96 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/04105 , H01L2224/05184 , H01L2224/05187 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05684 , H01L2224/211 , H01L2224/24011 , H01L2224/24137 , H01L2224/245 , H01L2224/2518 , H01L2224/27318 , H01L2224/291 , H01L2224/29116 , H01L2224/2919 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/40095 , H01L2224/40105 , H01L2224/40227 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45499 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48472 , H01L2224/48476 , H01L2224/48499 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48638 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48684 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48738 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48784 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48838 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48884 , H01L2224/73263 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83815 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85815 , H01L2224/92136 , H01L2224/92137 , H01L2224/92247 , H01L2924/00011 , H01L2924/01322 , H01L2924/014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/01044 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/0498 , H01L2924/0496 , H01L2924/0474 , H01L2924/0475 , H01L2924/0478 , H01L2924/0476 , H01L2924/0454 , H01L2924/0455 , H01L2924/0458 , H01L2924/0456 , H01L2924/00012 , H01L2924/01013 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01028 , H01L2924/01042 , H01L2924/01015 , H01L2924/0105 , H01L2924/0509 , H01L2924/01006 , H01L2924/01014 , H01L2924/0103 , H01L2924/01078 , H01L2924/0665 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/00 , H01L2924/20759 , H01L2924/2076 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2224/83205
摘要： 本发明涉及封装内封装及其形成方法。根据本发明的实施方式，半导体器件包括具有多个引线和小片焊盘的引线框、以及被连接到所述引线框的小片焊盘的半导体模块。所述半导体模块包括配置在第一密封剂中的第一半导体芯片。所述半导体模块具有耦接到所述第一半导体芯片的多个接触垫。所述半导体器件进一步包括将所述多个接触垫与多个引线耦接的多个互连件、以及被配置在所述半导体模块和引线框的第二密封剂。
-
公开(公告)号：CN103515260B
公开(公告)日：2017-03-01
申请号：CN201310261023.3
申请日：2013-06-26
申请人： 英飞凌科技奥地利有限公司
CPC分类号： H01L23/3135 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49575 , H01L23/5389 , H01L24/05 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/83 , H01L24/85 , H01L24/96 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/04105 , H01L2224/05184 , H01L2224/05187 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05684 , H01L2224/211 , H01L2224/24011 , H01L2224/24137 , H01L2224/245 , H01L2224/2518 , H01L2224/27318 , H01L2224/291 , H01L2224/29116 , H01L2224/2919 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/40095 , H01L2224/40105 , H01L2224/40227 , H01L2224/40247 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45499 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48472 , H01L2224/48476 , H01L2224/48499 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48638 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48684 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48738 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48784 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48838 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48884 , H01L2224/73263 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83815 , H01L2224/8385 , H01L2224/83851 , H01L2224/83862 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85815 , H01L2224/92136 , H01L2224/92137 , H01L2224/92247 , H01L2924/00011 , H01L2924/01322 , H01L2924/014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01022 , H01L2924/01073 , H01L2924/01044 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/0498 , H01L2924/0496 , H01L2924/0474 , H01L2924/0475 , H01L2924/0478 , H01L2924/0476 , H01L2924/0454 , H01L2924/0455 , H01L2924/0458 , H01L2924/0456 , H01L2924/00012 , H01L2924/01013 , H01L2924/01047 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01028 , H01L2924/01042 , H01L2924/01015 , H01L2924/0105 , H01L2924/0509 , H01L2924/01006 , H01L2924/01014 , H01L2924/0103 , H01L2924/01078 , H01L2924/0665 , H01L2924/01082 , H01L2924/01049 , H01L2924/01083 , H01L2924/00 , H01L2924/20759 , H01L2924/2076 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2075 , H01L2924/20754 , H01L2224/83205
摘要： 本发明涉及封装内封装及其形成方法。根据本发明的实施方式，半导体器件包括具有多个引线和小片焊盘的引线框、以及被连接到所述引线框的小片焊盘的半导体模块。所述半导体模块包括配置在第一密封剂中的第一半导体芯片。所述半导体模块具有耦接到所述第一半导体芯片的多个接触垫。所述半导体器件进一步包括将所述多个接触垫与多个引线耦接的多个互连件、以及被配置在所述半导体模块和引线框的第二密封剂。
-
公开(公告)号：CN1113412C
公开(公告)日：2003-07-02
申请号：CN98107066.3
申请日：1998-02-21
申请人： 法梭半导体
CPC分类号： H01L24/85 , B23K20/007 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05556 , H01L2224/05624 , H01L2224/05638 , H01L2224/05647 , H01L2224/05664 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48738 , H01L2224/48747 , H01L2224/48764 , H01L2224/85 , H01L2924/00011 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01057 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/181 , H01L2924/01046 , H01L2924/00014 , H01L2224/78 , H01L2924/00 , H01L2224/48638 , H01L2924/013 , H01L2924/00015 , H01L2924/00013 , H01L2924/00012
摘要： 用于半导体器件的由第一和第二金属层组成的金属合金中，所述第一金属层由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，而第二金属层由钯和金组成，其中钯大约占0.5-5重量百分比，其余部分基本上为金。
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
