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1152 条记录 (耗时 0.036 秒)

    Semiconductor light-emitting device
    92.
    发明专利
    Semiconductor light-emitting device 有权

    公开(公告)号：JP5227693B2

    公开(公告)日：2013-07-03

    申请号：JP2008207097

    申请日：2008-08-11

    申请人： スタンレー電気株式会社

    发明人： 亮介 近藤

    IPC分类号： H01L33/62

    CPC分类号： H01L24/97 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49113 ,  H01L2924/07802 ,  H01L2924/00

    摘要： The present invention provides a semiconductor light emitting device. The subject of the invention is that the reliability to the external stress can be improved by improving the joint intensity of the bonding wire relative to the electrode of the semiconductor light emitting element in the semiconductor light emitting device formed by connecting in series a plurality of semiconductor light emitting element provided with electrode on their upper surface, and the favorable light emitting efficiency can be ensured by restraining the expansion of the electrode area of the semiconductor light emitting element. As a resolving means, a reflection pattern (11), a power supply pattern (9) and a relay pattern (10) composed of conductor patterns are provided on the insulating substrate, the electrodes without different polarity of two mutual adjacent semiconductor light emitting elements in the three semiconductor light emitting elements are electrically connected by two bonding wires connectedby using the relay pattern (10) as a relay point, and the bonding between the electrodes and the bonding wires of the semiconductor light emitting element are performed by the ball bonding portion.

    Power semiconductor device
    93.
    发明专利
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：JP2013125806A

    公开(公告)日：2013-06-24

    申请号：JP2011272961

    申请日：2011-12-14

    申请人： Mitsubishi Electric Corp ,  三菱電機株式会社

    发明人： TANAKA TOMONORI ,  IWAGAMI TORU

    IPC分类号： H01L25/07 ,  H01L25/18 ,  H01L29/739 ,  H01L29/78 ,  H02M1/08 ,  H03K17/687

    CPC分类号： H02M7/537 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/49111

    摘要： PROBLEM TO BE SOLVED: To miniaturize the whole device, in a power semiconductor device used by operating an IGBT and a MOSFET in parallel as a switching device.SOLUTION: Among IGBTs 1-3 and MOSFETs 7-9, transistors arranged in the vicinity of a gate control circuit 18 provide via those gates a gate control signal given from the gate control circuit 18 to gates of transistors arranged at positions distant from the gate control circuit 18. Among IGBTs 4-6 and MOSFETs 10-12, transistors arranged in the vicinity of a gate control circuit 19 provide via those gates a gate control signal given from the gate control circuit 19 to transistors arranged at positions distant from the gate control circuit 19.

    摘要翻译： 要解决的问题：为了使整个装置小型化，将用于并联的IGBT和MOSFET并联的功率半导体装置用作开关装置。 解决方案：在IGBT 1-3和MOSFET 7-9中，排列在栅极控制电路18附近的晶体管经过这些栅极提供从栅极控制电路18给出的栅极控制信号， 在IGBT4-6和MOSFET10-12中，配置在栅极控制电路19附近的晶体管经由这些栅极提供从栅极控制电路19给出的栅极控制信号，其布置在远离位置的晶体管 来自门控制电路19. 版权所有（C）2013，JPO＆INPIT

    Semiconductor device and semiconductor device manufacturing method
    94.
    发明专利
    Semiconductor device and semiconductor device manufacturing method 有权
    半导体器件和半导体器件制造方法

    公开(公告)号：JP2013102112A

    公开(公告)日：2013-05-23

    申请号：JP2012028239

    申请日：2012-02-13

    申请人： Fuji Electric Co Ltd ,  富士電機株式会社

    发明人： TADA SHINJI ,  MOCHIZUKI EIJI ,  IKEDA YOSHINARI ,  NISHIZAWA TATSUO

    IPC分类号： H01L23/12 ,  H01L23/34 ,  H01L25/07 ,  H01L25/18

    CPC分类号： H01L2224/48091 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

    摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in bonding accuracy of external terminals and which can simplify a soldering process at the time of manufacturing.SOLUTION: In a semiconductor device of an embodiment, a hole 5a is formed in a metal layer 5 composing a circuit pattern formed on an insulating substrate 4. By press fitting an external terminal 20 in the hole 5a, the external terminal 20 is connected to the metal layer 5. in a cross section in a direction orthogonal to the external terminal 20 at a contact part 5b of the external terminal 20 and the hole 5a, the external terminal 20 touches an inner periphery of the hole at 40% and over.

    摘要翻译： 要解决的问题：提供一种外部端子的接合精度优异的半导体装置，能够简化制造时的焊接工序。 解决方案：在实施例的半导体器件中，在构成绝缘基板4上形成的电路图案的金属层5中形成孔5a。通过将外部端子20压入孔5a中，外部端子20 在外部端子20的接触部5b和孔5a的与外部端子20正交的方向上的截面中连接金属层5.外部端子20以40％的角度接触孔的内周， 并结束。 版权所有（C）2013，JPO＆INPIT

    Luminescent device
    95.
    发明专利
    Luminescent device 有权

    公开(公告)号：JP5196107B2

    公开(公告)日：2013-05-15

    申请号：JP2007086727

    申请日：2007-03-29

    申请人： 日亜化学工業株式会社

    发明人： 和明 酒井 ,  統 多留木 ,  直正 小出

    IPC分类号： H01L33/32 ,  H01L33/62 ,  H01L33/56

    CPC分类号： H01L2224/32245 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

    摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device improved in yield by reducing the flow-out of an adhesive material with which a protection element is adhered. SOLUTION: The light-emitting device is provided with a light emitting element which is mounted to a first lead; the protection element which is mounted to a second lead via the adhesive material; and a wire which connects the light emitting element and the second lead wherein the surface to which the wire is connected and the surface to which the protection element is mounted have differences in height by a step formed in the second lead. In the other case, the light-emitting device and the protection element are mounted to the first lead via the adhesive material, and the surface to which the light emitting element is mounted and the surface to which the protection element is mounted have differences in height by the step wherein the surface to which light emitting element is mounted is lower than the surface to which the protection element is mounted. COPYRIGHT: (C)2009,JPO&INPIT

    Insulating reflective substrate and led package
    97.
    发明专利
    Insulating reflective substrate and led package 审中-公开
    绝缘基板绝缘和LED封装

    公开(公告)号：JP2013065847A

    公开(公告)日：2013-04-11

    申请号：JP2012192483

    申请日：2012-08-31

    申请人： Fujifilm Corp ,  富士フイルム株式会社

    发明人： HOTTA YOSHINORI

    IPC分类号： H01L33/60

    CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/49113 ,  H01L2924/10253 ,  H05K1/0274 ,  H05K1/053 ,  H05K2201/0116 ,  H05K2201/10106 ,  H05K2201/2054 ,  H05K2203/049 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： PROBLEM TO BE SOLVED: To provide an LED package excellent in both insulating properties and diffuse reflectance, and an insulating reflective substrate for use in the same.SOLUTION: The insulating reflective substrate includes a metal substrate having an insulating layer on a surface thereof, a metal wiring layer provided on the insulating layer, and a porous layer provided on a part of the insulating layer and a part of the metal wiring layer. The metal substrate is a valve metal substrate. The insulating layer is an anodic oxide film of a valve metal. A porosity of the porous layer is 10% or more. The porous layer contains inorganic particles having an average particle diameter of 0.1 μm or more and an inorganic binder. The inorganic binder is at least one selected from a group consisting of aluminum phosphate, sodium silicate, and aluminum chloride.

    摘要翻译： 要解决的问题：提供绝缘性能和漫反射性优异的LED封装以及用于其中的绝缘反射基板。 解决方案：绝缘反射基板包括在其表面上具有绝缘层的金属基板，设置在绝缘层上的金属布线层，以及设置在绝缘层的一部分上的多孔层和金属的一部分 接线层。 金属基板是阀金属基板。 绝缘层是阀金属的阳极氧化膜。 多孔层的孔隙率为10％以上。 多孔层含有平均粒径为0.1μm以上的无机粒子和无机粘结剂。 无机粘合剂是选自磷酸铝，硅酸钠和氯化铝中的至少一种。 版权所有（C）2013，JPO＆INPIT

    Semiconductor light-emitting device and manufacturing method thereof
    99.
    发明专利
    Semiconductor light-emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：JP2013004807A

    公开(公告)日：2013-01-07

    申请号：JP2011135585

    申请日：2011-06-17

    申请人： Toshiba Corp ,  株式会社東芝

    发明人： SHIMOMURA KENJI ,  KOMATSU TETSUO

    IPC分类号： H01L33/54 ,  H01L21/56 ,  H01L23/28 ,  H01L23/48 ,  H01L33/62

    CPC分类号： H01L33/486 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/85

    摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which in an embodiment can achieve light distribution control at low cost and can be applied for a wide range of uses, and a manufacturing method therefor.SOLUTION: There is provided a manufacturing method for a semiconductor light-emitting device which includes a first frame having a light-emitting element fastened thereto, a second frame disposed apart from the first frame and connected to the electrode of the light-emitting element with a metal wire, and a resin package covering the light-emitting element and the first and the second frames. The manufacturing method comprises the steps of: forming a first resin which covers the light-emitting element and the first and the second frames on the surface of a metal plate having a plurality of the first frames and a plurality of the second frames alternately arranged thereon; forming a groove along the outer periphery of the resin package including the first resin on top of the metal plate; filling the inside of the groove with a second resin; and dividing the second resin along the groove into sections to form the resin package covering the outer periphery of the first resin with the second resin.

    摘要翻译： 解决的问题：提供一种半导体发光装置，其在一个实施例中可以以低成本实现配光控制，并且可以应用于广泛的用途及其制造方法。 解决方案：提供了一种半导体发光器件的制造方法，该半导体发光器件包括具有紧固在其上的发光元件的第一框架，与第一框架分离并连接到发光元件的电极的第二框架， 具有金属线的发光元件和覆盖发光元件和第一和第二框架的树脂封装。 该制造方法包括以下步骤：形成覆盖发光元件的第一树脂和在具有多个第一框架的金属板的表面上的第一和第二框架以及交替布置在其上的多个第二框架 ; 沿着包括第一树脂的树脂封装的外周在金属板的顶部上形成凹槽; 用第二树脂填充槽的内部; 以及将所述第二树脂沿着所述凹槽划分成多个部分，以形成用所述第二树脂覆盖所述第一树脂的外周的树脂封装。 版权所有（C）2013，JPO＆INPIT