公开(公告)号：JPWO2011121756A1

公开(公告)日：2013-07-04

申请号：JP2012507977

申请日：2010-03-31

申请人： ルネサスエレクトロニクス株式会社

发明人： 雄一 谷藤 ,  雄一 谷藤 ,  浩偉 岡 ,  浩偉 岡

IPC分类号： H01L21/52 ,  H01L21/60 ,  H01L23/12 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L24/73 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/743 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/03436 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/2612 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40132 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/85205 ,  H01L2224/92157 ,  H01L2224/92166 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/05442

摘要： 配線板のチップ搭載部上にダイボンド材を塗布する工程で使用するスタンピングノズル(42)の下面には、ダイボンド材が充填される堀り込み部(50)が設けられている。掘り込み部(50)の平面寸法は、チップ搭載部上に搭載されるチップの外形寸法よりも小さい。また、掘り込み部(50)の深さは、上記チップの厚さよりも小さい。上記チップの厚さが100μm以下である場合に、上記スタンピングノズル(42)を使ってチップ搭載部上にダイボンド材を塗布することにより、上記チップの上面にダイボンド材が這い上がる不具合が回避される。

公开(公告)号：JPWO2011030368A1

公开(公告)日：2013-02-04

申请号：JP2010535134

申请日：2009-09-08

申请人： パナソニック株式会社

发明人： 知恵 藤岡 ,  知恵 藤岡 ,  稔志 横江 ,  稔志 横江 ,  大地 熊野 ,  大地 熊野

IPC分类号： H01L21/60

CPC分类号： H01L24/40 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/16 ,  H01L24/29 ,  H01L24/37 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/85375 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/00012

摘要： 導電性リボン309を用いて電気的接続を行うリードのパッド形状部分303aやダイパッド302等に押さえ領域310a,310bを付加することにより、リボンボンドの際に押さえ領域310a,310bを押さえて固定しながら強力な超音波を印加することができるため、導電性リボン309を強固に接合しながら接合部分の低抵抗化を図ることができる。又、導電性リボン309の接合強度が向上するため、導電性リボン309を積層化する必要がなくなり、容易に超音波による半導体チップ306に対するストレスを低減することができる。

公开(公告)号：JP2012015202A

公开(公告)日：2012-01-19

申请号：JP2010148092

申请日：2010-06-29

申请人： On Semiconductor Trading Ltd ,  オンセミコンダクター・トレーディング・リミテッド

发明人： URUSHIBATA HIROYOSHI

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/83464 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/84214 ,  H01L2224/84464 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L2224/92157 ,  H01L2224/92246 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207

摘要： PROBLEM TO BE SOLVED: To solve a problem that, although there is a need to press a circumference region of an island or a hanging pin provided around the island by a clamper of a bonding device for preventing the floating of the island when ultrasonic wave bonding of a metal ribbon is performed, the island side cannot be pressed in the case that a sufficient circumference region of the island cannot be ensured or in the case that the hanging pin cannot be provided by miniaturization of the device.SOLUTION: A projection that projects on a lead side so as to have the same height as that of a lead end part, to a side opposite to a lead of an island. The projection and the lead end part are pressed simultaneously by a clamper. Thereby, floating of the island can be prevented even when neither hanging pin nor pressing region around the island is not provided.

摘要翻译： 解决的问题为了解决这样的问题，虽然需要通过用于防止岛的浮动的接合装置的夹持器来压迫设置在岛周围的岛的周边区域或悬挂销， 在金属带的超声波接合的情况下，在不能确保岛的足够的周边区域的情况下或在通过设备的小型化不能提供吊销的情况下，不能压制岛侧。

解决方案：突出部，其突出在引线侧，以便具有与引线端部相同的高度，与岛的引线相反的一侧。 突起和引线端部被夹持器同时按压。 因此，即使没有设置悬挂销和岛周围的按压区域，也可以防止岛的浮动。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010123686A

公开(公告)日：2010-06-03

申请号：JP2008294816

申请日：2008-11-18

申请人： Renesas Technology Corp ,  株式会社ルネサステクノロジ

发明人： SATO YUKIHIRO ,  FUNATSU KATSUHIKO ,  NAKAMURA HIROYUKI

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85013 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a means for improving reliability of a semiconductor device. SOLUTION: A semiconductor chip 3 is mounted over a chip mounting portion 2 of a lead frame 41 via solder 11a. A metal plate 6 is arranged over a source pad electrode 3s of the semiconductor chip 3 and a lead portion 4a of a lead frame 41 via solder 11b, 11c. A solder reflow process is performed thereby to bond the semiconductor chip 3 over the chip mounting portion 2 with the solder 11a, and to bond the metal plate 6 to the source pad electrode 3a and the lead portion 4 with the solder 11b, 11c. The lead frame 41 is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate 6 is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate 6 is softened in the solder reflow process. Thereafter, a gate pad electrode 3g of the semiconductor chip 3 is coupled to a lead portion 5a via a wire 7, a sealing resin portion 8 is formed, and then the lead frame 41 is cut. COPYRIGHT: (C)2010,JPO&INPIT

摘要翻译： 要解决的问题：提供一种用于提高半导体器件的可靠性的手段。 解决方案：半导体芯片3通过焊料11a安装在引线框架41的芯片安装部分2上。 金属板6通过焊料11b，11c配置在半导体芯片3的源极焊盘电极3s和引线框41的引线部分4a的上方。 进行焊锡回流处理，由此将焊料11a与半导体芯片3接合在芯片安装部2上，用焊料11b，11c将金属板6与焊盘电极3a和引线部4接合。 引线框架41由铜合金形成，因此其软化温度高于焊料回流工艺的温度。 金属板6由无氧铜形成，并且其软化温度低于回流焊接工艺的温度，由此金属板6在回流焊接过程中软化。 此后，半导体芯片3的栅极焊盘电极3g通过导线7与引线部分5a连接，形成密封树脂部分8，然后切断引线框架41。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP4459883B2

公开(公告)日：2010-04-28

申请号：JP2005290761

申请日：2005-10-04

申请人： 三菱電機株式会社

发明人： 哲次郎 角田

IPC分类号： H01L25/07 ,  H01L25/18

CPC分类号： H01L23/49861 ,  H01L23/057 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L24/73 ,  H01L24/84 ,  H01L24/85 ,  H01L24/90 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/05599

公开(公告)号：JP2009302579A

公开(公告)日：2009-12-24

申请号：JP2009222186

申请日：2009-09-28

申请人： Fuji Electric Device Technology Co Ltd ,  富士電機デバイステクノロジー株式会社

发明人： IKEDA YOSHINARI

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/34

CPC分类号： H01L24/73 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that is high in performance and reliability by connecting a semiconductor chip, an insulation substrate and a cooling body (heat sink) without using solder. SOLUTION: A surface electrode 25 of the semiconductor chip 11 and a lead frame 43 are made of the same material. A tip part 44 of the lead frame 43 is formed into a projecting shape. The surface film 25 of the semiconductor chip and the lead frame 43 are faced each other while they are pressed and vibrated at an ultrasonic frequency. Thus, the same metals formed on the outermost surface (interface) are diffused each other and solderless, direct metal connection can be performed. COPYRIGHT: (C)2010,JPO&INPIT

摘要翻译： 要解决的问题：通过连接半导体芯片，绝缘基板和冷却体（散热器）而不使用焊料来提供性能和可靠性高的半导体器件。 解决方案：半导体芯片11的表面电极25和引线框架43由相同的材料制成。 引线框架43的尖端部44形成为突出形状。 半导体芯片的表面薄膜25和引线框架43在以超声波频率被按压和振动的状态下相互面对。 因此，形成在最外表面（界面）上的相同金属彼此扩散并且无焊接，可以执行直接金属连接。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009194153A

公开(公告)日：2009-08-27

申请号：JP2008033316

申请日：2008-02-14

申请人： Toshiba Corp ,  株式会社東芝

发明人： NISHIUCHI HIDEO ,  IGUCHI TOMOHIRO ,  KITANI TOMOYUKI ,  AIZAWA TAKAHIRO ,  OISHI MASAKO ,  TOJO HIROSHI

IPC分类号： H01L21/60 ,  H01L21/607

CPC分类号： H01L24/40 ,  B23K20/004 ,  B23K20/10 ,  B23K20/106 ,  B23K2201/42 ,  H01L24/37 ,  H01L24/45 ,  H01L24/48 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37599 ,  H01L2224/40091 ,  H01L2224/40247 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of excellently bonding a connection conductor 16 to lead terminals 13. SOLUTION: The method of manufacturing the semiconductor device 1 is configured so that lead terminals 13 formed on a lead frame 20 exhibiting an elongated plate shape and having one end solely supported in the longitudinal direction and an upper surface electrode 15 of a semiconductor chip 10 mounted on the lead frame 20 are connected by ultrasonic joining to a connection conductor 16 as a plate-like or strip-like connection conductor. The method comprises a step of pressing a part of the connection conductor 16 so that it contacts with the lead terminals 13, and a step of applying ultrasonic vibration in a direction substantially following the longitudinal direction in a plane crossing the pressing direction to the connection conductor 16 in a pressed state. COPYRIGHT: (C)2009,JPO&INPIT

摘要翻译： 解决方案：提供一种制造半导体器件的方法，该半导体器件能够将连接导体16极好地接合到引线端子13.解决方案：制造半导体器件1的方法被配置为使得引线端子13 形成在引线框架20上，其呈现出细长的板状，并且一端仅沿纵向方向支撑，并且安装在引线框架20上的半导体芯片10的上表面电极15通过超声波接合连接到连接导体16，如 板状或带状连接导体。 该方法包括将连接导体16的一部分按压使其与引线端子13接触的步骤，以及在与该连接导体交叉的方向上沿大致沿着长度方向的方向上施加超声波振动的步骤 16处于按压状态。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008098585A

公开(公告)日：2008-04-24

申请号：JP2006281694

申请日：2006-10-16

申请人： Fuji Electric Device Technology Co Ltd ,  富士電機デバイステクノロジー株式会社

发明人： YOKOMAE TOSHIYUKI ,  KAMIYANAGI KATSUMICHI ,  MOCHIZUKI EIJI ,  IKEDA YOSHINARI

IPC分类号： H01L21/60

CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/84 ,  H01L25/162 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05553 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37111 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high productivity. SOLUTION: Electrical connection in a semiconductor device 10 is made by a plurality of conductor plates, i. e. lead frames 23, 24, 25, 26 and 27. The lead frames 23, 24, 25, 26 and 27 are arranged three-dimensionally such that respective welding portions 23a, 23b, 23c, 24a, 24b, 24c, 25a, 25b, 26a, 26b, 27a and 27b are exposed toward a laser light source used in laser welding. Subsequently, laser welding is performed by irradiating laser light. In such semiconductor device and its manufacturing process, welding becomes convenient and reliable and thereby productivity of semiconductor device is improved. Furthermore, the lead frames 23, 24, 25, 26 and 27 have cooling effect and exhibit the function as a heat spreader. COPYRIGHT: (C)2008,JPO&INPIT

摘要翻译： 解决的问题：提供高生产率的半导体器件。 解决方案：半导体器件10中的电连接由多个导体板制成，即， 即 引线框架23,24,25,26和27.引线框架23,24,25,26和27三维布置，使得各个焊接部分23a，23b，23c，24a，24b，24c，25a​​，25b， 26a，26b，27a和27b朝向激光焊接中使用的激光光源曝光。 随后，通过照射激光来进行激光焊接。 在这种半导体器件及其制造工艺中，焊接变得方便可靠，从而提高了半导体器件的生产率。 此外，引线框架23,24,25,26和27具有冷却效果并且具有作为散热器的功能。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007142138A

公开(公告)日：2007-06-07

申请号：JP2005333656

申请日：2005-11-18

申请人： Mitsubishi Electric Corp ,  三菱電機株式会社

发明人： NARASAKI ATSUSHI

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L29/417

CPC分类号： H01L24/40 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/45124 ,  H01L2224/48463 ,  H01L2224/48724 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To prevent a gate wiring from being damaged due to a metal film formation position shifted to a gate wiring side in a direct lead bonding semiconductor device. SOLUTION: The direct lead bonding semiconductor device includes a semiconductor substrate, a surface electrode provided on the surface of the semiconductor substrate, a gate wiring provided on the surface of the semiconductor substrate along with the surface electrode, a metal film provided on the surface electrode, and a lead terminal provided on the metal film. The gate wiring is covered with a polyimide membrane and the metal film extends over the polyimide membrane. COPYRIGHT: (C)2007,JPO&INPIT

摘要翻译： 要解决的问题：为了防止由于在直接引线接合半导体器件中移动到栅极布线侧的金属成膜位置而损坏栅极布线。 解决方案：直接引线接合半导体器件包括半导体衬底，设置在半导体衬底的表面上的表面电极，与表面电极一起设置在半导体衬底的表面上的栅极布线，设置在半导体衬底上的金属膜 表面电极和设置在金属膜上的引线端子。 栅极布线被聚酰亚胺膜覆盖，金属膜在聚酰亚胺膜上延伸。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005129886A

公开(公告)日：2005-05-19

申请号：JP2004022222

申请日：2004-01-29

申请人： Fuji Electric Holdings Co Ltd ,  富士電機ホールディングス株式会社

发明人： IKEDA YOSHINARI ,  YOSHIHARA KATSUHIKO ,  IIZUKA YUJI ,  MOCHIZUKI EIJI ,  FUJII TAKASHI ,  YAMASHITA MITSUO

IPC分类号： H01L23/34 ,  H01L21/60

CPC分类号： H01L24/91 ,  H01L2224/292 ,  H01L2224/29298 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/77272 ,  H01L2224/83138 ,  H01L2224/83801 ,  H01L2224/84 ,  H01L2224/84801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： PROBLEM TO BE SOLVED: To enhance the reliability of the soldered junctions between a semiconductor chip and other component members and the reliability of the soldered junctions between component members except the semiconductor chip. SOLUTION: A thickness of a solder bonding layer 23 for bonding an electrode provided on the surface of a semiconductor chip 1 and lead frame 21 is made into a thickness of ≥ 100 μm. The thermal stress and the distortion generated in the solder bonding layer 23 due to the difference in the coefficients of linear expansion between the semiconductor chip 1 and the lead frame 21 are reduced. In addition, a thickness of the solder bonding layer for bonding a soldered junction between a heatsink and an insulating substrate and a soldered junction between the insulating substrate and the semiconductor chip 1 is made into a thickness of ≥ 100 μm, and the thermal stress and the distortion are reduced. When the heatsink is not bonded, a thickness of the solder bonding layer 23 for bonding the electrode provided on the surface of the semiconductor chip 1 and the lead frame 21 is made into a thickness of ≥ 50 μm. COPYRIGHT: (C)2005,JPO&NCIPI

摘要翻译： 要解决的问题：提高半导体芯片和其它部件之间的焊接接头的可靠性以及除了半导体芯片之外的部件之间的焊接接头的可靠性。 解决方案：将设置在半导体芯片1和引线框架21的表面上的电极接合的焊料接合层23的厚度制成≥100μm的厚度。 由于半导体芯片1和引线框架21之间的线膨胀系数的差异导致的焊接接合层23产生的热应力和失真减小。 另外，将绝缘基板与半导体芯片1之间的散热器和绝缘基板之间的焊接接合部的焊接接合层的厚度设定为≥100μm的厚度，将热应力 失真减少。 当不结合散热器时，将设置在半导体芯片1的表面上的电极和引线框21接合的焊料接合层23的厚度制成≥50μm的厚度。 版权所有（C）2005，JPO＆NCIPI