公开(公告)号：JP4719299B2

公开(公告)日：2011-07-06

申请号：JP2010073297

申请日：2010-03-26

Applicant: 新日鉄マテリアルズ株式会社 ,  株式会社日鉄マイクロメタル

Inventor： 智裕 宇野 ,  晋一 寺嶋 ,  隆 山田 ,  圭一 木村 ,  景仁 西林

IPC: H01L21/60 ,  C22C5/02 ,  C22C5/04 ,  C22C9/00 ,  C22C9/02 ,  C22C9/06 ,  C22C19/03 ,  C22C27/04 ,  C22C27/06 ,  C22F1/00 ,  C22F1/08

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition.. The outer layer is 0.021 to 0.12µm in thickness.

公开(公告)号：JP5627263B2

公开(公告)日：2014-11-19

申请号：JP2010073299

申请日：2010-03-26

Applicant: 新日鉄住金マテリアルズ株式会社 ,  日鉄住金マイクロメタル株式会社

Inventor： 宇野　智裕 ,  智裕 宇野 ,  木村　圭一 ,  圭一 木村 ,  寺嶋　晋一 ,  晋一 寺嶋 ,  山田　隆 ,  隆 山田 ,  景仁 西林 ,  景仁 西林

IPC: H01L21/60

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

公开(公告)号：JPWO2009014168A1

公开(公告)日：2010-10-07

申请号：JP2009524506

申请日：2008-07-24

Applicant: 新日鉄マテリアルズ株式会社 ,  株式会社日鉄マイクロメタル

Inventor： 宇野　智裕 ,  智裕 宇野 ,  木村　圭一 ,  圭一 木村 ,  寺嶋　晋一 ,  晋一 寺嶋 ,  山田　隆 ,  隆 山田 ,  景仁 西林 ,  景仁 西林

IPC: H01L21/60 ,  H01B5/02

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: 本発明は、材料費が安価で、ボール接合性、熱サイクル試験またはリフロー試験の信頼性に優れ、保管寿命も良好である、狭ピッチ用細線化にも適応する銅系ボンディングワイヤを提供することを目的とする。銅を主成分とする芯材と、前記芯材の上に設けられた、前記芯材と、成分及び組成のいずれか一方又は両方の異なる金属M及び銅を含有する外層を有するボンディングワイヤであって、前記外層の厚さが0.021〜0.12μmであることを特徴とする半導体装置用ボンディングワイヤである。

公开(公告)号：JP2010153918A

公开(公告)日：2010-07-08

申请号：JP2010073299

申请日：2010-03-26

Applicant: Nippon Steel Materials Co Ltd ,  Nittetsu Micro Metal:Kk ,  新日鉄マテリアルズ株式会社 ,  株式会社日鉄マイクロメタル

Inventor： UNO TOMOHIRO ,  KIMURA KEIICHI ,  TERAJIMA SHINICHI ,  YAMADA TAKASHI ,  NISHIBAYASHI KAGEHITO

IPC: H01L21/60

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: PROBLEM TO BE SOLVED: To provide a copper-based semiconductor device bonding wire which has defects reduced in thermal cycle test in addition to having conventional basic performance. SOLUTION: The semiconductor device bonding wire is provided with a core material having copper as a main component, and an outer layer, which is arranged on the core material and contains Pd and copper. The semiconductor device bonding wire is characterized in that the outer layer is a part containing ≥50 mol% of Pd and the thickness of the outer layer is 0.021-0.12 μm. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供除具有常规基本性能之外还具有热循环试验中减少的缺陷的铜基半导体器件接合线。 解决方案：半导体器件接合线设置有以铜为主要成分的芯材，以及设置在芯材上并含有Pd和铜的外层。 半导体器件接合线的特征在于，外层为含有≥50摩尔％Pd的部分，外层的厚度为0.021-0.12μm。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP5054359B2

公开(公告)日：2012-10-24

申请号：JP2006325458

申请日：2006-12-01

Applicant: パナソニック株式会社

Inventor： 泰永 山本 ,  新吾 深水 ,  有 鍋島

IPC: H01L27/04 ,  H01L21/60 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06

CPC classification number: H01L27/088 ,  H01L21/823475 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01045 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3011 ,  H01L2924/20651 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/20755

Abstract: A semiconductor integrated circuit relating to one aspect of the present invention includes a power transistor, at least one or more of first metal patterns functioning as a first electrode of the power transistor and at least one or more of second metal patterns functioning as a second electrode of the power transistor formed in an interlayer insulation film on the transistor, at least one or more of first busses electrically connected to a corresponding first metal pattern of the at least one or more of the first metal patterns, a single second bus electrically connected to the at least one or more of second metal patterns, and a contact pad provided to each of the at least one or more of first busses and the single second bus.

公开(公告)号：JP5004203B2

公开(公告)日：2012-08-22

申请号：JP2005300919

申请日：2005-10-14

Applicant: シャープ株式会社

Inventor： フェンヤン ザン ,  シェン テン スー ,  エー． バロークリフ ロバート

IPC: C01G55/00 ,  B82B1/00 ,  B82B3/00 ,  H01L29/06

CPC classification number: H01L24/48 ,  C30B25/005 ,  C30B29/16 ,  C30B29/62 ,  H01L24/45 ,  H01L2224/43827 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/45166 ,  H01L2224/45169 ,  H01L2224/45178 ,  H01L2224/45181 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2224/45688 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/20751 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/811 ,  H01L2924/00014 ,  H01L2924/20651 ,  H01L2924/00 ,  H01L2924/01006

Abstract: Iridium oxide (IrOx) nanowires and a method forming the nanowires are provided. The method comprises: providing a growth promotion film with non-continuous surfaces, having a thickness in the range of 0.5 to 5 nanometers (nm), and made from a material such as Ti, Co, Ni, Au, Ta, polycrystalline silicon (poly-Si), SiGe, Pt, Ir, TiN, or TaN; establishing a substrate temperature in the range of 200 to 600 degrees C.; introducing oxygen as a precursor reaction gas; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx nanowires from the growth promotion film surfaces. The IrOx nanowires have a diameter in the range of 100 to 1000 Å, a length in the range of 1000 Å to 2 microns, an aspect ratio (length to width) of greater than 50:1. Further, the nanowires include single-crystal nanowire cores covered with an amorphous layer having a thickness of less than 10 Å.

公开(公告)号：JP4542203B2

公开(公告)日：2010-09-08

申请号：JP2009524506

申请日：2008-07-24

Applicant: 新日鉄マテリアルズ株式会社 ,  株式会社日鉄マイクロメタル

Inventor： 智裕 宇野 ,  晋一 寺嶋 ,  隆 山田 ,  圭一 木村 ,  景仁 西林

IPC: H01L21/60 ,  H01B5/02

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

公开(公告)号：JPWO2013046824A1

公开(公告)日：2015-03-26

申请号：JP2013535972

申请日：2012-06-18

Applicant: ローム株式会社

Inventor： 啓樹 奥村 ,  啓樹 奥村

IPC: H01L25/04 ,  H01L21/60 ,  H01L25/18

CPC classification number: H01L25/072 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/04 ,  H01L25/18 ,  H01L27/0629 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48138 ,  H01L2224/48139 ,  H01L2224/48157 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48471 ,  H01L2224/4903 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/00015 ,  H01L2924/00012

Abstract: 一端がバイポーラデバイスに接続され、他端が導電部材に接続され、中間部がユニポーラデバイスに接続されているボンディングワイヤを含む半導体装置において、ワイヤボンディングの信頼性を向上化できる半導体装置を提供する。パッケージ4は、ダイパッド61と、ソース用リード63と、第1のMOSFET11と、第1のショットキーバリアダイオード21と含む。第1のMOSFET11のソース電極11Sと第1のショットキーバリアダイオード21のアノード電極21Aとソース用リード63は、一端部が第1のMOSFET11のソース電極11Sに接合され、他端部がソース用リード63に接合され、中間部が第1のショットキーバリアダイオード21のアノード電極21Aに接合されたボンディングワイヤ31によって電気的に接合されている。

Abstract translation: 一端连接到所述双极型器件，其另一端连接到所述导电构件，在包括接合线的半导体装置的中间部分连接到所述单极性器件，提供一种能够提高引线接合的可靠性的半导体装置。 封装4包括管芯焊盘61，源极引线63，第一MOSFET 11，第一肖特基势垒二极管21。 阳极电极21A和源极引线的第一肖特基势垒二极管21的第一MOSFET 11源极电极11S的63的一端结合到所述第一MOSFET 11的源极电极11S，另一端引线为源 63接合到中间部分通过接合线31电连接接合到第一肖特基势垒二极管21的阳极电极21A。

公开(公告)号：JP4719300B2

公开(公告)日：2011-07-06

申请号：JP2010073298

申请日：2010-03-26

Applicant: 新日鉄マテリアルズ株式会社 ,  株式会社日鉄マイクロメタル

Inventor： 智裕 宇野 ,  晋一 寺嶋 ,  隆 山田 ,  圭一 木村 ,  景仁 西林

IPC: H01L21/60

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition.. The outer layer is 0.021 to 0.12µm in thickness.

公开(公告)号：JP2008140970A

公开(公告)日：2008-06-19

申请号：JP2006325458

申请日：2006-12-01

Applicant: Matsushita Electric Ind Co Ltd ,  松下電器産業株式会社

Inventor： FUKAMIZU SHINGO ,  NABESHIMA TAMOTSU ,  YAMAMOTO YASUNAGA

IPC: H01L21/822 ,  H01L21/60 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06

CPC classification number: H01L27/088 ,  H01L21/823475 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01045 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3011 ,  H01L2924/20651 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/20755

Abstract: PROBLEM TO BE SOLVED: To provide a reliable semiconductor integrated circuit, where damage or stress to a power transistor is reduced by clarifying the route of current flowing to the power transistor and by optimizing current flowing to the power transistor. SOLUTION: The semiconductor integrated circuit includes: a power transistor 100A formed on a semiconductor substrate 100; a plurality of first and second metal patterns that are formed directly above the power transistor 100A and function as the first and second electrodes of the power transistor; a plurality of first buses 130, 131 electrically connected to the first corresponding metal pattern in the plurality of first metal patterns; a second single bus 150 electrically connected to the plurality of second metal patterns; and a contact pad 304 provided in each of the plurality of first buses 130, 131 and the second single bus 150. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可靠的半导体集成电路，其中通过澄清流向功率晶体管的电流的路径以及优化流向功率晶体管的电流来降低功率晶体管的损坏或应力。 解决方案：半导体集成电路包括：形成在半导体衬底100上的功率晶体管100A; 多个第一和第二金属图案，其形成在功率晶体管100A的正上方并用作功率晶体管的第一和第二电极; 电连接到多个第一金属图案中的第一对应金属图案的多个第一总线130,131; 电连接到多个第二金属图案的第二单总线150; 以及设置在多个第一总线130,131和第二单总线150中的每一个中的接触焊盘304.版权所有（C）2008，JPO＆INPIT