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公开(公告)号：US20100178879A1
公开(公告)日：2010-07-15
申请号：US12730310
申请日：2010-03-24
申请人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
发明人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
IPC分类号： H04B1/04
CPC分类号： H03F3/195 , H01L2224/05554 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。
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公开(公告)号：US08218328B2
公开(公告)日：2012-07-10
申请号：US12687114
申请日：2010-01-13
申请人： Nobuyoshi Maejima , Ryota Sato
发明人： Nobuyoshi Maejima , Ryota Sato
CPC分类号： H05K3/3442 , H01L23/3677 , H01L23/49838 , H01L23/50 , H01L23/66 , H01L24/16 , H01L24/31 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/0847 , H01L29/4175 , H01L29/7787 , H01L29/7835 , H01L2223/6644 , H01L2224/04042 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H05K1/0237 , H05K1/141 , H05K2201/09727 , H05K2201/10727 , H05K2201/10969 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： To provide a technique that can improve the reliability of coupling between a package with a PA module and a mounting board in mounting the package over the mounting board. The width of a back conductor pattern is made smaller than the width of each of back terminals. Specifically, for example, the back terminals are arranged in the X direction. The back terminals arranged in parallel to the X direction are coupled together by the back conductor pattern. At this time, the coupling direction (coupling line direction) of the back conductor pattern is the X direction. Taking into consideration the Y direction orthogonal to (intersecting) the X direction, the width of the back conductor pattern in the Y direction is made smaller than the width of each of the back terminals in the Y direction.
摘要翻译： 提供一种技术，可以在将封装安装在安装板上时，提高具有PA模块的封装与安装板之间的耦合的可靠性。 使后导体图案的宽度小于每个后端子的宽度。 具体地，例如，后端子沿X方向排列。 与X方向平行布置的背面端子通过背面导体图案耦合在一起。 此时，背面导体图案的耦合方向（耦合线方向）为X方向。 考虑与X方向正交（Y相交）的Y方向，使背面导体图案在Y方向上的宽度比Y方向上的各个背面端子的宽度小。
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公开(公告)号：US07962105B2
公开(公告)日：2011-06-14
申请号：US12730310
申请日：2010-03-24
申请人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
发明人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
CPC分类号： H03F3/195 , H01L2224/05554 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。
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公开(公告)号：US07706756B2
公开(公告)日：2010-04-27
申请号：US11626485
申请日：2007-01-24
申请人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
发明人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
CPC分类号： H03F3/195 , H01L2224/05554 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。
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公开(公告)号：US20070210866A1
公开(公告)日：2007-09-13
申请号：US11626485
申请日：2007-01-24
申请人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
发明人： Yusuke Sato , Nobuyoshi Maejima , Tomoaki Kudaishi , Shinji Moriyama , Naoki Kuroda , Ryota Sato , Masashi Okano
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H01L2224/05554 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/294 , H03F2200/451 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要翻译： 提供了一种技术，用于在增强电子设备的性能的同时，实现具有功率放大器电路的电子设备的尺寸的减小。 用于移动通信设备的RF功率模块包括安装在布线板上的第一和第二半导体芯片，无源部件以及第一和第二集成无源部件。 在第一半导体芯片中，形成用于GSM 900和DCS 1800的功率放大器电路的MISFET元件，并且还形成控制电路。 在第一集成无源部件中，形成用于GSM 900的低通滤波器电路，并且在第二集成无源部件中形成用于DCS 1800的低通滤波器电路。 在第二半导体芯片中，形成用于GSM 900和DCS 1800的天线切换电路。 在布线板的上表面上，第二半导体芯片设置在集成的无源元件之间的第一半导体芯片的旁边。
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公开(公告)号：US20050082683A1
公开(公告)日：2005-04-21
申请号：US10985049
申请日：2004-11-10
申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
发明人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
CPC分类号： H05K3/284 , H01L23/29 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.
摘要翻译： 一种半导体器件，包括在主表面上形成有多个焊盘的半导体芯片，各自形成有两端的连接端子的芯片部件，安装有半导体芯片和芯片部件的模块基板，用于连接芯片的焊接连接部 通过焊接来模块基板的部件和基板端子，用于连接半导体芯片的焊盘的金线和模块基板的相应的基板端子，以及由诸如绝缘硅树脂的低弹性树脂形成的密封部分 用于覆盖半导体芯片，芯片部件，焊料连接部分和金线的弹性环氧树脂，其通过再熔化防止焊料连接部分中的焊料流出，从而防止短路。
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公开(公告)号：US06710263B2
公开(公告)日：2004-03-23
申请号：US09790978
申请日：2001-02-23
申请人： Toshiyuki Kobayashi , Yasutoshi Kurihara , Takumi Ueno , Nobuyoshi Maejima , Hirokazu Nakajima , Tomio Yamada , Tsuneo Endoh
发明人： Toshiyuki Kobayashi , Yasutoshi Kurihara , Takumi Ueno , Nobuyoshi Maejima , Hirokazu Nakajima , Tomio Yamada , Tsuneo Endoh
IPC分类号： H05K116
CPC分类号： H01L24/97 , H01L23/49894 , H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/09701 , H01L2924/10329 , H01L2924/1306 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H01L2924/351 , H05K1/0271 , H05K1/0306 , H05K3/0052 , H05K3/284 , H05K3/4611 , H05K3/4629 , H05K2201/09036 , H05K2201/0909 , H05K2203/175 , H01L2224/92247 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2075 , H01L2924/2076 , H01L2924/20754 , H01L2224/05599 , H01L2924/01049
摘要： In a semiconductor device, the likely occurrence of cracking of a ceramic substrate, and the consequential disconnection of internal layer wiring, due to thermal changes suffered when the semiconductor device is mounted on external wiring boards having different thermal expansion is prevented. The semiconductor device has a ceramic substrate, a wiring pattern formed on a first principal plane and having mounted semiconductor components, an external electrode portion formed on a second principal plane and connected to an external circuit, internal layer wiring formed inside said ceramic substrate to electrically connect said wiring pattern and said external electrode portion via through-hole wiring, and semiconductor components and a resin layer covering said semiconductor components, wherein the internal layer wiring is formed internally with respect to the side of said ceramic substrate with a clearance of at least 0.05 mm.
摘要翻译： 在半导体装置中，防止了当将半导体器件安装在具有不同热膨胀的外部布线板上时，由于热变化而导致陶瓷基板的破裂的可能发生，以及由此导致的内层布线的断开。 半导体器件具有陶瓷基板，形成在第一主平面上并具有安装的半导体部件的布线图案，形成在第二主平面上并连接到外部电路的外部电极部分，形成在所述陶瓷基板内部的内部层布线， 通过通孔布线连接所述布线图案和所述外部电极部分，以及半导体部件和覆盖所述半导体部件的树脂层，其中内层布线相对于所述陶瓷基板的侧面至少形成有至少间隙 0.05毫米。
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8.发明授权公开(公告)号：US06831360B2
公开(公告)日：2004-12-14
申请号：US10021173
申请日：2001-12-19
申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
发明人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
IPC分类号： H01L2334
CPC分类号： H05K3/284 , H01L23/29 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.
摘要翻译： 一种半导体器件，包括在主表面上形成有多个焊盘的半导体芯片，各自形成有两端的连接端子的芯片部件，安装有半导体芯片和芯片部件的模块基板，用于连接芯片的焊接连接部 通过焊接来模块基板的部件和基板端子，用于连接半导体芯片的焊盘的金线和模块基板的相应的基板端子，以及由诸如绝缘硅树脂的低弹性树脂形成的密封部分 用于覆盖半导体芯片，芯片部件，焊料连接部分和金线的弹性环氧树脂，其通过再熔化防止焊料连接部分中的焊料流出，从而防止短路。
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公开(公告)号：US07468294B2
公开(公告)日：2008-12-23
申请号：US10985049
申请日：2004-11-10
申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
发明人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
CPC分类号： H05K3/284 , H01L23/29 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.
摘要翻译： 一种半导体器件，包括在主表面上形成有多个焊盘的半导体芯片，各自形成有两端的连接端子的芯片部件，安装有半导体芯片和芯片部件的模块基板，用于连接芯片的焊接连接部 通过焊接来模块基板的部件和基板端子，用于连接半导体芯片的焊盘的金线和模块基板的相应的基板端子，以及由诸如绝缘硅树脂的低弹性树脂形成的密封部分 用于覆盖半导体芯片，芯片部件，焊料连接部分和金线的弹性环氧树脂，其通过再熔化防止焊料连接部分中的焊料流出，从而防止短路。
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