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公开(公告)号：US20150349215A1
公开(公告)日：2015-12-03
申请号：US14760177
申请日：2013-12-18
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Britta Göötz , Wolfgang Mönch , Martin Straßburg
CPC classification number: H01L33/502 , C08G61/02 , C08G2261/3142 , C08G2261/3422 , C08G2261/5222 , C08G2261/95 , C09K11/06 , C09K2211/1416 , H01L27/15 , H01L33/08 , H01L33/18 , H01L33/32 , H01L33/505 , H01L33/507 , H01L33/56
Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.
Abstract translation: 光电半导体芯片包括彼此间隔一定距离排列的多个有源元件。 载体横向于有源元件布置。 有源元件各自具有垂直于载体延伸并且彼此平行取向的主轴。 转换器材料围绕圆周面上的有源元件。 转换器材料包括转化物质或转化物质和基质材料。 活性元件各自具有由至少两层包围的中心芯区域，使得活性层包围芯区域，并且覆盖层包围活性层。 芯区域形成有第一半导体材料。 有源层包括发光材料。 覆盖层由第二半导体材料形成，并且可以具有0.1nm和100n之间的层厚度。
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公开(公告)号：US09496462B2
公开(公告)日：2016-11-15
申请号：US14760177
申请日：2013-12-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Göötz , Wolfgang Mönch , Martin Straβburg
CPC classification number: H01L33/502 , C08G61/02 , C08G2261/3142 , C08G2261/3422 , C08G2261/5222 , C08G2261/95 , C09K11/06 , C09K2211/1416 , H01L27/15 , H01L33/08 , H01L33/18 , H01L33/32 , H01L33/505 , H01L33/507 , H01L33/56
Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.
Abstract translation: 光电半导体芯片包括彼此间隔一定距离排列的多个有源元件。 载体横向于有源元件布置。 有源元件各自具有垂直于载体延伸并且彼此平行取向的主轴。 转换器材料围绕圆周面上的有源元件。 转换器材料包括转化物质或转化物质和基质材料。 活性元件各自具有由至少两层包围的中心芯区域，使得活性层包围芯区域，并且覆盖层包围活性层。 芯区域形成有第一半导体材料。 有源层包括发光材料。 覆盖层由第二半导体材料形成，并且可以具有0.1nm和100n之间的层厚度。
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3.发明申请公开(公告)号：US20160087177A1
公开(公告)日：2016-03-24
申请号：US14888770
申请日：2014-05-05
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Thomas Schwarz , Frank Singer , Alexander Linkov , Stefan Illek , Wolfgang Mönch
CPC classification number: H01L33/62 , H01L24/24 , H01L25/0753 , H01L33/0095 , H01L33/46 , H01L33/486 , H01L33/54 , H01L33/58 , H01L33/60 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/12041 , H01L2933/0058 , H01L2933/0066 , H01L2924/00 , H01L2224/4554
Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.
Abstract translation: 辐射发射半导体器件包括至少一个具有半导体层序列的半导体芯片，该半导体层序列具有产生辐射的有源区; 其上形成有用于半导体芯片外部接触的至少一个电触点的安装表面，其中所述安装表面平行于所述半导体层序列的主延伸平面延伸; 辐射出口表面以与安装表面成角度或垂直于该安装表面延伸; 布置在半导体芯片和辐射出射表面之间的光束路径中的辐射引导层; 并且在半导体器件的区域和顶视图中与辐射引导层相邻的反射器体覆盖半导体芯片。
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公开(公告)号：US09777894B2
公开(公告)日：2017-10-03
申请号：US14372790
申请日：2013-01-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Wolfgang Mönch , Thomas Bleicher
CPC classification number: F21K9/61 , G02B6/0011 , H01L25/0753 , H01L33/005 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/73265 , H01L2933/005 , H01L2924/00014 , H01L2924/00
Abstract: A method of producing a partial luminaire includes arranging at least one semiconductor chip that emits electromagnetic radiation on a substrate, and applying an elastic waveguide, disposed downstream of the at least one semiconductor chip in an emission direction, such that the elastic waveguide projects at at least one of its side surfaces beyond the substrate.
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公开(公告)号：US20170054054A1
公开(公告)日：2017-02-23
申请号：US15307815
申请日：2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adam Bauer , Wolfgang Mönch , David Racz , Michael Wittmann , Dominik Schulten , Andreas Löffler
CPC classification number: H01L33/06 , G02F1/133524 , G02F1/133603 , H01L25/0753 , H01L25/0756 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.
Abstract translation: 公开了半导体部件和照明装置。 在一个实施例中，半导体部件包括被配置为产生具有第一峰值波长的主辐射和布置在半导体芯片上的辐射转换元件的半导体芯片。 辐射转换元件包括量子结构，其将初级辐射至少部分地转换成具有第二峰值波长的次级辐射和对初级辐射透射的衬底。
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Patent Agency Ranking
公开(公告)号：US20150097198A1
公开(公告)日：2015-04-09
申请号：US14385116
申请日：2013-02-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Stefan Illek , Matthias Sabathil , Alexander Linkov , Thomas Bleicher , Norwin von Malm , Wolfgang Mönch
CPC classification number: H01L33/58 , F21Y2101/00 , F21Y2105/00 , F21Y2115/10 , G02B6/0015 , G02B6/0018 , G02B6/0025 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F1/133611 , G02F1/133615 , G02F2001/133607 , H01L25/0753 , H01L33/44 , H01L33/507 , H01L33/54 , H01L33/60 , H01L33/644 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.
Abstract translation: 在至少一个实施例中，表面光源包括具有用于产生主辐射的辐射主侧的一个或多个光电子半导体芯片。 散射体沿着半导体芯片的主发射方向设置在辐射主侧的下游。 散粒体设计用于散射初级辐射。 散射体的主发射方向相对于半导体芯片的主发射方向倾斜取向。
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7.发明申请公开(公告)号：US20170207373A1
公开(公告)日：2017-07-20
申请号：US15473918
申请日：2017-03-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Göötz , Wolfgang Mönch , Norwin von Malm
CPC classification number: H01L33/507 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/502 , H01L33/505 , H01L33/58 , H01L2933/0041 , H01L2933/0058
Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.
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公开(公告)号：US09614131B2
公开(公告)日：2017-04-04
申请号：US14650545
申请日：2013-12-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Göötz , Wolfgang Mönch , Norwin von Malm
CPC classification number: H01L33/507 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/502 , H01L33/505 , H01L33/58 , H01L2933/0041 , H01L2933/0058
Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.
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公开(公告)号：US20160146434A1
公开(公告)日：2016-05-26
申请号：US14902995
申请日：2014-07-03
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Wolfgang Mönch , Frank Singer
CPC classification number: F21V9/30 , C09K11/7774 , F21S41/14 , F21S41/16 , F21S41/285 , F21V9/08 , H01L25/0753 , H01L33/505 , H01L33/507 , H01L2924/0002 , H01L2933/0041 , H01S5/005 , H01S5/4025 , H01L2924/00
Abstract: A conversion element includes a separating structure and a multiplicity of conversion regions, wherein each conversion region is at least partly enclosed by a part of the separating structure, and each conversion region converts electromagnetic primary radiation at least partly into a secondary radiation having a longer wavelength.
Abstract translation: 转换元件包括分离结构和多个转换区域，其中每个转换区域至少部分地被分离结构的一部分包围，并且每个转换区域将电磁一次辐射至少部分地转换成具有较长波长的二次辐射 。
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公开(公告)号：US20150247608A1
公开(公告)日：2015-09-03
申请号：US14372790
申请日：2013-01-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Wolfgang Mönch , Thomas Bleicher
CPC classification number: F21K9/61 , G02B6/0011 , H01L25/0753 , H01L33/005 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/73265 , H01L2933/005 , H01L2924/00014 , H01L2924/00
Abstract: A method of producing a partial luminaire includes arranging at least one semiconductor chip that emits electromagnetic radiation on a substrate, and applying an elastic waveguide, disposed downstream of the at least one semiconductor chip in an emission direction, such that the elastic waveguide projects at at least one of its side surfaces beyond the substrate.
Abstract translation: 一种制造部分照明装置的方法包括：在基板上排列电磁辐射的至少一个半导体芯片，以及在发射方向上设置在所述至少一个半导体芯片的下游的弹性波导，使得所述弹性波导在 其表面中的至少一个侧面超过基底。
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