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公开(公告)号：US10008640B2
公开(公告)日：2018-06-26
申请号：US15181935
申请日：2016-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye Yeon , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
IPC: F21V9/00 , H01L33/50 , F21K9/233 , H01L25/075 , F21V23/00 , F21W131/103 , F21Y113/00 , F21Y105/10 , F21Y115/10 , F21Y113/13 , H05B33/08
CPC classification number: H01L33/50 , F21K9/233 , F21V23/003 , F21W2131/103 , F21Y2105/10 , F21Y2113/00 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L2224/16225 , H05B33/0857
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US09842960B2
公开(公告)日：2017-12-12
申请号：US14867659
申请日：2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyeok Heo , Jin Sub Lee , Young Jin Choi , Hyun Seong Kum , Ji Hye Yeon , Dae Myung Chun , Jung Sub Kim , Han Kyu Seong
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
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公开(公告)号：US09172008B2
公开(公告)日：2015-10-27
申请号：US14158729
申请日：2014-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook Hwang , Jung Sub Kim
CPC classification number: H01L33/50 , H01L33/08 , H01L33/10 , H01L33/12 , H01L33/24 , H01L33/26 , H01L33/32 , H01L33/507 , H01L2224/14 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.
Abstract translation: 半导体发光器件包括透光衬底，设置在透光衬底上的透光缓冲层和发光结构。 透光缓冲层包括具有不同折射率的第一层和第二层，交替设置至少一次。 发光结构包括依次设置在缓冲层上的第一导电型半导体层，有源层和第二导电型半导体层。
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公开(公告)号：US09941443B2
公开(公告)日：2018-04-10
申请号：US15063150
申请日：2016-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub Lee , Jung Sub Kim , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun , Young Jin Choi , Jae Hyeok Heo
IPC: H01L33/24 , H01L33/08 , H01L33/14 , H01L33/18 , H01L33/00 , H01L33/02 , H01L33/42 , H01L33/48 , H01L33/52
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
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公开(公告)号：US09831378B2
公开(公告)日：2017-11-28
申请号：US15172976
申请日：2016-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub Lee , Jung Sub Kim
CPC classification number: H01L33/005 , H01L21/02458 , H01L31/0236 , H01L33/04 , H01L33/12 , H01L33/22
Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.
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Patent Agency Ranking
公开(公告)号：US09312439B2
公开(公告)日：2016-04-12
申请号：US14454536
申请日：2014-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub Lee , Jung Sub Kim , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun , Young Jin Choi , Jae Hyeok Heo
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。
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公开(公告)号：US10686103B2
公开(公告)日：2020-06-16
申请号：US15984959
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye Yeon , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
IPC: H01L33/50 , F21K9/233 , H01L25/075 , F21V23/00 , F21W131/103 , F21Y113/00 , F21Y105/10 , F21Y115/10 , F21Y113/13 , H05B45/20
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US20170130909A1
公开(公告)日：2017-05-11
申请号：US15181935
申请日：2016-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
CPC classification number: H01L33/50 , F21K9/233 , F21V23/003 , F21W2131/103 , F21Y2105/10 , F21Y2113/00 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L2224/16225 , H05B33/0857
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US09362448B2
公开(公告)日：2016-06-07
申请号：US14686619
申请日：2015-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Jeong Choi , Jung Sub Kim , Byung Kyu Chung , Yeon Woo Seo , Dong Gun Lee
IPC: H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/12 , H05B33/08
CPC classification number: H01L33/06 , H01L27/15 , H01L33/0025 , H01L33/08 , H01L33/12 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H05B33/0803 , H05B33/0845 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.
Abstract translation: 提供一种纳米结构半导体发光器件，其包括由第一导电型氮化物半导体形成的基极层和多个发光纳米结构，所述多个发光纳米结构被设置为在基底层上彼此间隔开。 多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔，设置在纳米孔的表面上的应力控制层，并且包括含有铟的氮化物半导体，设置在应力控制层上的有源层和 包括含有铟的氮化物半导体和设置在有源层上的第二导电型氮化物半导体层。
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公开(公告)号：US09269865B2
公开(公告)日：2016-02-23
申请号：US14516470
申请日：2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Myung Chun , Jung Sub Kim , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Young Jin Choi , Jae Hyeok Heo
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。
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