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公开(公告)号：US09905401B2
公开(公告)日：2018-02-27
申请号：US14676031
申请日：2015-04-01
Applicant: CANON ANELVA CORPORATION
Inventor： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
CPC classification number: H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
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2.发明授权Electrical contact apparatus for use with plasma or glow discharge reaction chamber 失效用于等离子体或辉光放电反应室的电接触装置
公开(公告)号：US4917044A
公开(公告)日：1990-04-17
申请号：US320526
申请日：1989-06-02
Applicant: Leopoldo D. Yau , Galen H. Kawamoto
Inventor： Leopoldo D. Yau , Galen H. Kawamoto
IPC: C23C16/30 , C23C16/515 , H01J37/32 , H01L21/314
CPC classification number: H01J37/32082 , C23C16/308 , C23C16/515 , H01J37/32165 , H01J37/32577 , H01L21/3145 , H01J2237/3321 , H01J2237/3328
Abstract: An electrical contact apparatus for use in a plama or glow discharge chamber, particularly a chamber for depositing silicon oxynitride. A feedthrough member provides an electrical path between the interior and exterior of the chamber. An electrical contact member having an outwardly domed surface engages the feedthrough member. A non-conductive collar is disposed about the domed surface for limiting the flow of gas around the domed surface.
Abstract translation: 一种用于在普通或辉光放电室中使用的电接触装置，特别是用于沉积氮氧化硅的室。 馈通构件在室的内部和外部之间提供电路径。 具有向外圆顶表面的电接触构件与馈通构件接合。 围绕穹顶表面设置非导电套圈以限制围绕圆顶表面的气体流动。
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公开(公告)号：US09034152B2
公开(公告)日：2015-05-19
申请号：US13310230
申请日：2011-12-02
Applicant: Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
Inventor： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
CPC classification number: H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
Abstract translation: 反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间， 目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口 落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。
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公开(公告)号：US20150060263A1
公开(公告)日：2015-03-05
申请号：US14388569
申请日：2013-03-08
Applicant: TORAY INDUSTRIES INC.
Inventor： Mamoru Kawashita , Fumiyasu Nomura
CPC classification number: H01J37/3411 , C23C14/34 , C23C14/562 , C23C14/564 , H01J37/32477 , H01J37/32853 , H01J37/32871 , H01J37/3405 , H01J2237/022 , H01J2237/3328
Abstract: In order to provide an adhesion preventing plate for a vacuum film formation apparatus, the adhesion preventing plate being capable of suppressing the peel-off of an adhered film to an extremely low level regardless of a protection target member, the adhesion preventing plate is arranged so that the area of contact with the protection target member is reduced and a part other than the contact surface is thermally insulated.
Abstract translation: 为了提供一种用于真空成膜装置的防粘连板，不管保护目标构件如何，防粘接板能够将粘附膜的剥离抑制到非常低的水平，防粘接板被布置成 与保护目标构件的接触面积减小，并且接触表面以外的部分是绝热的。
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公开(公告)号：US20140220361A1
公开(公告)日：2014-08-07
申请号：US14148612
申请日：2014-01-06
Inventor： Peter MASCHWITZ
IPC: C03C17/245
CPC classification number: H01J37/32596 , C03C17/245 , C03C17/2456 , C03C2217/213 , C03C2218/153 , C23C16/402 , C23C16/45517 , C23C16/503 , C23C16/513 , H01J37/32036 , H01J37/32568 , H01J37/3266 , H01J37/32724 , H01J2237/3321 , H01J2237/3328 , H05H1/24 , H05H1/42 , H05H1/46 , H05H2001/466
Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
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Patent Agency Ranking
公开(公告)号：US20150206714A1
公开(公告)日：2015-07-23
申请号：US14676031
申请日：2015-04-01
Applicant: CANON ANELVA CORPORATION
Inventor： NOBUO YAMAGUCHI , KAZUAKI MATSUO , SUSUMU AKIYAMA , SATOSHI UCHINO , YOSHIMITSU SHIMANE
CPC classification number: H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
Abstract translation: 反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间， 目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口 落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。
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公开(公告)号：US20120152736A1
公开(公告)日：2012-06-21
申请号：US13310230
申请日：2011-12-02
Applicant: Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
Inventor： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
IPC: C23C14/34
CPC classification number: H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
Abstract translation: 反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间， 目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口 落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。
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8.发明申请PLASMA SOURCE AND METHODS FOR DEPOSITING THIN FILM COATINGS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权使用等离子体增强化学气相沉积沉积薄膜的等离子体源和方法公开(公告)号：US20100028238A1
公开(公告)日：2010-02-04
申请号：US12535447
申请日：2009-08-04
Applicant: Peter MASCHWITZ
Inventor： Peter MASCHWITZ
IPC: C01B33/12 , C23C16/513 , H05H1/24
CPC classification number: H01J37/32596 , C03C17/245 , C03C17/2456 , C03C2217/213 , C03C2218/153 , C23C16/402 , C23C16/45517 , C23C16/503 , C23C16/513 , H01J37/32036 , H01J37/32568 , H01J37/3266 , H01J37/32724 , H01J2237/3321 , H01J2237/3328 , H05H1/24 , H05H1/42 , H05H1/46 , H05H2001/466
Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
Abstract translation: 本发明提供了可用于薄膜涂层领域的新型等离子体源及其使用方法。 更具体地，本发明提供了分别产生用于等离子体增强化学气相沉积的线性和二维等离子体的新颖的线性和二维等离子体源。 本发明还提供了制备薄膜涂层的方法和提高这些方法的涂层效率的方法。
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公开(公告)号：US5492737A
公开(公告)日：1996-02-20
申请号：US244573
申请日：1994-08-01
Applicant: Christopher Dobson , Adrian Kiermasz , Knut Beekmann , Christine Shearer , Edmond Ling , Alan Winn , Rob Wilby
Inventor： Christopher Dobson , Adrian Kiermasz , Knut Beekmann , Christine Shearer , Edmond Ling , Alan Winn , Rob Wilby
IPC: C23C16/50 , C23C16/505 , C23C16/509 , C23C16/52 , H01J37/32 , C23C14/26
CPC classification number: H01J37/32082 , C23C16/5096 , C23C16/52 , H01J37/32174 , H01J37/3299 , H01J2237/3328
Abstract: A reactor 10 defines a chamber 11 in which are disposed an upper electrode 12 and a lower workpiece electrode 13. The upper electrode is connected to a R.F. supply whilst the lower electrode is connected to a stress control unit 14. The stress control unit is used to adjust or maintain the effective resistance of the connection between the workpiece electrode 13 and ground.
Abstract translation: PCT No.PCT / GB92 / 02238 Sec。 371日期1994年8月1日 102（e）日期1994年8月1日PCT 1992年12月2日PCT PCT。 出版物WO93 / 11276 日期：1993年6月10日。反应器10限定了一个室11，其中设置有上电极12和下工件电极13.上电极连接到R.F. 供电，而下电极连接到应力控制单元14.应力控制单元用于调节或保持工件电极13和地之间的连接的有效电阻。
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公开(公告)号：US20240242939A1
公开(公告)日：2024-07-18
申请号：US18404542
申请日：2024-01-04
Applicant: Micron Technology, Inc.
Inventor： Chao Lin Lee , Rachmat Wibowo , Lipeng Qian , SAMUEL SISWANTO
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32715 , H01J2237/3321 , H01J2237/3323 , H01J2237/3328 , H01J2237/3346
Abstract: Methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. The present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. After forming a film on the wafer using chemical vapor deposition (CVD), the wafer may be raised to a higher position in the chamber for CVD. A combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. The combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.
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