公开(公告)号：US20150048518A1

公开(公告)日：2015-02-19

申请号：US14059102

申请日：2013-10-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： I-Chih Chen ,  Ying-Hao Chen ,  Chi-Cheng Jeng ,  Volume Chien ,  Fu-Tsun Tsai ,  Kun-Huei Lin

IPC分类号： H01L23/48 ,  G06F17/50

CPC分类号： H01L23/5226 ,  G06F17/5077 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05085 ,  H01L2224/05092 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16145 ,  H01L2224/29006 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

公开(公告)号：US20150031200A1

公开(公告)日：2015-01-29

申请号：US14512895

申请日：2014-10-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Yu-Wen Liu ,  Ying-Ju Chen ,  Hsiu-Ping Wei

IPC分类号： H01L23/00 ,  H01L21/768

CPC分类号： H01L24/05 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/48 ,  H01L23/481 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/0509 ,  H01L2224/05092 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

摘要翻译： 一个实施例是一种凸块接合焊盘结构，其包括基板，该基板包括顶层，设置在顶层上的加强垫，顶层上的中间层，设置在中间层上的中间连接垫，中间层上方的外层 层和通过外层中的开口连接到中间连接焊盘的凸块下金属（UBM）。 另外的实施例可以包括将中间连接垫机械连接到加强垫的通孔。 通孔可以包括选自由固体通孔，基本上环形的通孔或五个五孔的通孔组成的组的特征。 然而，另一实施例可以包括辅助加强垫，以及将加强垫机械连接到辅助加强垫的第二通孔。

公开(公告)号：US20130147052A1

公开(公告)日：2013-06-13

申请号：US13313397

申请日：2011-12-07

申请人： Xueren Zhang ,  Kim-Yong Goh

发明人： Xueren Zhang ,  Kim-Yong Goh

IPC分类号： H01L23/538 ,  H01L21/768

CPC分类号： H01L24/05 ,  H01L21/563 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05092 ,  H01L2224/05124 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/06051 ,  H01L2224/061 ,  H01L2224/13027 ,  H01L2224/13147 ,  H01L2224/14104 ,  H01L2224/14131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An integrated circuit die has a dielectric layer positioned over all the contact pads on the integrated circuit die. Openings are provided in the dielectric layer over each of the contact pads of the integrated circuit die in order to permit electrical coupling to be made between the integrated circuit and circuit boards outside of the die. For those contact pads located in the central region of the die, the opening in the dielectric layer is in a central region of the contact pad. For those contact pads located in a peripheral region of the die, spaced adjacent the perimeter die, the opening in the dielectric layer is offset from the center of the contact pad and is positioned closer to the central region of the die than the center of the contact pad is to the central region of the die.

摘要翻译： 集成电路管芯具有位于集成电路管芯上的所有接触焊盘上的电介质层。 在集成电路管芯的每个接触焊盘上的介电层中设置开口，以便允许在集成电路和管芯外部的电路板之间进行电耦合。 对于位于管芯的中心区域的接触焊盘，电介质层中的开口位于接触焊盘的中心区域。 对于那些位于模具周边区域的接触垫，邻近周边模具间隔开，电介质层中的开口偏离接触焊盘的中心，并且位于比芯片中心更靠近模具的中心区域 接触垫是到模具的中心区域。

公开(公告)号：US08405211B2

公开(公告)日：2013-03-26

申请号：US12726449

申请日：2010-03-18

申请人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Yu-Wen Liu ,  Ying-Ju Chen ,  Hsiu-Ping Wei

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Yu-Wen Liu ,  Ying-Ju Chen ,  Hsiu-Ping Wei

IPC分类号： H01L23/485

CPC分类号： H01L24/05 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/48 ,  H01L23/481 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/0509 ,  H01L2224/05092 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

公开(公告)号：US20160035684A1

公开(公告)日：2016-02-04

申请号：US14884438

申请日：2015-10-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsiu-Ping Wei ,  Hsien-Wei Chen ,  Hao-Yi Tsai ,  Ying-Ju Chen ,  Yu-Wen Liu

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L24/05 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/48 ,  H01L23/481 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/0509 ,  H01L2224/05092 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

公开(公告)号：US09171811B2

公开(公告)日：2015-10-27

申请号：US14512895

申请日：2014-10-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Yu-Wen Liu ,  Ying-Ju Chen ,  Hsiu-Ping Wei

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/48 ,  H01L23/481 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/0509 ,  H01L2224/05092 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

摘要翻译： 一个实施例是一种凸块接合焊盘结构，其包括基板，该基板包括顶层，设置在顶层上的加强垫，顶层上的中间层，设置在中间层上的中间连接垫，中间层上方的外层 层和通过外层中的开口连接到中间连接焊盘的凸块下金属（UBM）。 另外的实施例可以包括将中间连接垫机械连接到加强垫的通孔。 通孔可以包括选自由固体通孔，基本上环形的通孔或五个五孔的通孔组成的组的特征。 然而，另一实施例可以包括辅助加强垫，以及将加强垫机械连接到辅助加强垫的第二通孔。

公开(公告)号：US09093430B2

公开(公告)日：2015-07-28

申请号：US14059102

申请日：2013-10-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： I-Chih Chen ,  Ying-Hao Chen ,  Chi-Cherng Jeng ,  Volume Chien ,  Fu-Tsun Tsai ,  Kun-Huei Lin

IPC分类号： H01L23/48 ,  G06F17/50

CPC分类号： H01L23/5226 ,  G06F17/5077 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05085 ,  H01L2224/05092 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16145 ,  H01L2224/29006 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

摘要翻译： 半导体器件包括包括多个第一层金属焊盘的第一层，形成在第一层顶部上的第二层，第二层包括多个第二层金属焊盘，以及将第一层金属焊盘连接到第二层金属焊盘的通孔 层金属垫。 第一层金属焊盘和第二层金属焊盘之间的表面积重叠低于规定的阈值。

公开(公告)号：US08907478B2

公开(公告)日：2014-12-09

申请号：US13786045

申请日：2013-03-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hao-Yi Tsai ,  Hsien-Wei Chen ,  Yu-Wen Liu ,  Ying-Ju Chen ,  Hsiu-Ping Wei

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L24/05 ,  H01L21/768 ,  H01L21/76877 ,  H01L23/48 ,  H01L23/481 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/0509 ,  H01L2224/05092 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under bump metal (UBM) connected to the intermediate connection pad through an opening in the outer layer. Further embodiments may comprise a via mechanically coupling the intermediate connection pad to the reinforcement pad. The via may comprise a feature selected from the group consisting of a solid via, a substantially ring-shaped via, or a five by five array of vias. Yet, a further embodiment may comprise a secondary reinforcement pad, and a second via mechanically coupling the reinforcement pad to the secondary reinforcement pad.

摘要翻译： 一个实施例是一种凸块接合焊盘结构，其包括基板，该基板包括顶层，设置在顶层上的加强垫，顶层上的中间层，设置在中间层上的中间连接垫，中间层上方的外层 层和通过外层中的开口连接到中间连接焊盘的凸块下金属（UBM）。 另外的实施例可以包括将中间连接垫机械连接到加强垫的通孔。 通孔可以包括选自由固体通孔，基本上环形的通孔或五个五孔的通孔组成的组的特征。 然而，另一实施例可以包括辅助加强垫，以及将加强垫机械连接到辅助加强垫的第二通孔。

公开(公告)号：US09659859B2

公开(公告)日：2017-05-23

申请号：US14809580

申请日：2015-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： I-Chih Chen ,  Ying-Hao Chen ,  Chi-Cherng Jeng ,  Volume Chien ,  Fu-Tsun Tsai ,  Kun-Huei Lin

IPC分类号： H01L23/522 ,  H01L23/48 ,  G06F17/50 ,  H01L23/31 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00

CPC分类号： H01L23/5226 ,  G06F17/5077 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05085 ,  H01L2224/05092 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/16145 ,  H01L2224/29006 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012

摘要： A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

公开(公告)号：US20150340331A1

公开(公告)日：2015-11-26

申请号：US14818922

申请日：2015-08-05

申请人： Hewlett-Packard Development Company, L.P.

发明人： Lawrence H. White ,  Robert Vina ,  Terry Mcmahon ,  James R. Przybyla

IPC分类号： H01L23/00

CPC分类号： H01L23/49822 ,  H01L21/76838 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0235 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05013 ,  H01L2224/05024 ,  H01L2224/05092 ,  H01L2224/05553 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2924/0534 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/05994 ,  H01L2924/1461 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/48

摘要： A semiconductor device can include a substrate and a trace layer positioned in proximity to the substrate and including a trace for supplying an electrical connection to the semiconductor device. Conductive layers can be positioned in proximity to the trace layer and form a bond pad. A non-conductive thin film layer can be positioned between the trace layer and the conductive layers. The thin film layer can include a via to enable the electrical connection from the trace to the bond pad. A portion of the trace between the substrate and the plurality of conductive layers can have a beveled edge.

摘要翻译： 半导体器件可以包括基板和位于基板附近的迹线层，并且包括用于向半导体器件提供电连接的迹线。 导电层可以位于跟踪层附近并形成接合焊盘。 非导电薄膜层可以位于迹线层和导电层之间。 薄膜层可以包括通孔以使得能够从迹线到接合焊盘的电连接。 衬底和多个导电层之间的迹线的一部分可以具有斜边。